Tokyo Electron Limited

Kabushiki Kaisha Yaskawa Denki

Nagaoka University of Technology

Tokyo Electron Sagami Limited

Future Vision Inc.

Katsuhiko Iwabuchi

Tsutomu Hiroki

Takaaki Matsuoka

Shigeru Ishizawa

Takeo Suzuki

Takashi Fuse

Satoshi Kagatsume

Mitsuru Ushijima

Hirotsugu Shiraiwa

Daisuke Nishide

Yasunobu Inoue

Takashi Tozawa

Masato Morishima

Toshiki Kobayashi

Madoka Fujimoto

Kanji Yasui

Hiroshi Nishiyama

A plasma electrode is provided with an electrode plate, a ground plate, and an insulating plate arranged between the electrode plate and the ground plate. Protrusions of the electrode plate are arranged inside through holes of the ground plate and inside through holes of the insulating plate. One of the through hole provided on the center axes of the protrusions and the through hole provided around the through hole discharges a first processing gas to below the ground plate. The other of the through holes exhausts a gas existing below the ground plate. A second flow path around the protrusions supplies a second processing gas supplied via a first flow path to a gap between outer walls of the protrusions and inner walls of the through holes. The second processing gas supplied to the gap is converted into plasma by high frequency power applied to the electrode plate.

Plasma electrode and plasma processing device

A substrate processing method includes steps of: arranging a substrate in a chamber; introducing Hgas at a first flow rate and Ogas at a second flow rate independently from the Hgas into a catalyst reaction portion in which catalyst is accommodated, wherein HO gas produced from the Hgas and the Ogas that contact the catalyst is ejected from the catalyst reaction portion toward the substrate; and reducing a flow rate of the Ogas introduced to the catalyst reaction portion to a third flow rate that is lower than the second flow rate, wherein the steps of introducing the Hgas and the Ogas and reducing the flow rate of the Ogas are repeated in this order at a predetermined repetition frequency, thereby processing the substrate.

Substrate processing method

A load lock apparatus including a carry port provided on a side of a carry-in/out section for carrying a substrate in/out from/to the outside, and a carry port provided on a side of a processing section for processing the substrate, includes: a temperature controlling plate for controlling a temperature of the substrate, the temperature controlling plate configured including a plate body made of a porous material and a temperature controlling gas supply path for supplying a temperature controlling gas controlled in temperature to the plate body. The temperature controlling gas passes through the plate body, blows out from a surface of the plate body, and is supplied to the substrate.

Load lock apparatus, processing system and substrate processing method

An electrostatic chuck is provided for a substrate stage that can be used in plasma treatment of various substrates such as a large-sized glass substrate for a flat panel display (FPD), a semiconductor wafer or the like. The electrostatic chuck is divided into a plurality of electrodes formed into nearly bar-like shapes. In accordance with an exemplary embodiment, each of the divided bar-like electrodes includes an inner electrode and a single layer thermally sprayed film formed on the surface of the inner electrode, with the bar-like electrodes disposed in parallel so as to form a plane electrode.

Electrostatic chuck for substrate stage, electrode used for the chuck, and treating system having the chuck and electrode

Processing chambers (A-F) for applying a process to a substrate W housed therein are provided at a periphery of a conveying chamber. A conveying case () houses the substrate (W) in a state isolated from an outside atmosphere. The conveyance case () has a gate valve () and a transfer mechanism (). A conveying mechanism () supports the conveyance case, and carries the conveyance case () to a position for conveying in/conveying out a substrate. The number of processing chambers connectable to a conveying chamber is not limited, and conveyance to the processing chamber can be executed while maintaining a predetermined ambience for an atmosphere of a substrate that is to be processed.

Substrate processing device

A heat-treatment apparatus comprises a heat-treatment section for subjecting a heat-treatment to a wafer and a loading section for loading a wafer boat into and unloading it from the heat-treatment section. The loading section is connected to the heat-treatment section and includes in it a movable support member, a drive mechanism and a vertical base board as well as a load-lock chamber for maintaining the inside in vacuum. The movable support member supports a wafer boat. The movable support member is attached to a vertical base board so that it can move up and down. The drive mechanism is attached on the major surface of the vertical base board opposite to the surface facing the wafer boat. The drive mechanism drives the movable support to move up and down. The heat-treatment apparatus further comprises a wafer transfer section that includes an orientation flat alignment mechanism and a buffer stage disposed near the orientation flat alignment mechanism. The wafer transfer section includes a wafer cassette means, a buffer stage and a wafer transfer robot for transferring wafers between the orientation flat alignment mechanism and the wafer boat.

Heat-treatment apparatus

Growing community of inventors

Kanagawa, Japan

Katsuhiko Iwabuchi