Sanyo Electric Co., Ltd.

Katsuhiko Iizuka

Kazuo Okada

Toshimitsu Taniguchi

Hiroyuki Suzuki

Tomonori Mori

Hiroyuki Dobashi

Takayoshi Honda

An LDD structure and a silicide layer are formed without a reduction in thickness of a silicon substrate or a carbon contamination. Forming a spacer on a sidewall of a gate electrode is performed in two process steps, i.e. dry-etching and wet-etching. Also, a silicon nitride film used as a buffer film in injection of high dose of impurities is removed by wet-etching. As a result, the reduction in thickness of the silicon substrate and the carbon contamination can be prevented. In addition, variation in depth of the high and low impurity concentration regions and silicide forming region with locations on the wafer can be suppressed because of high selection ratio available with the wet-etching.

Manufacturing method of semiconductor device

This invention offers a manufacturing method which does not cause a reduction in thickness of a silicon substrate or a carbon contamination in forming a transistor having an LDD stricture and silicide layers formed by a salicide technology. After a gate electrode is formed on the silicon substrate through a gate insulation film, an insulation film made of the same material as the gate insulation film is formed on the gate electrode. A first insulation film made of a material different from the material of the gate insulation film and the insulation film on the gate electrode and a second insulation film made of the same material as the material of the gate insulation film and the insulation film on the gate electrode are formed over the silicon substrate. Spacers made of the second insulation film are formed by dry-etching. Then the LDD structure and openings for forming the silicide layers are formed using wet-etching. As a result, the transistor having the LDD structure and the silicide layers formed by the salicide technology is manufactured without causing the reduction in thickness of the silicon substrate or the carbon contamination.

Growing community of inventors

Gunma, Japan

Katsuhiko Iizuka