Shin-Etsu Chemical Co., Ltd.

Katshiro Kobayashi

Jun Hatakeyama

Takeru Watanabe

Toshihiko Fujii

A material comprising a specific bisphenol compound of formula (1) is useful in forming a photoresist undercoat wherein Rand Rare H, alkyl, aryl or alkenyl, Rand Rare H, alkyl, alkenyl, aryl, acetal, acyl or glycidyl, Rand Rare alkyl having a ring structure, or Rand Rbond together to form a ring. The undercoat-forming material has an extinction coefficient sufficient to provide an antireflective effect at a thickness of at least 200 nm, and a high etching resistance as demonstrated by slow etching rates with CF/CHFand Cl/BClgases for substrate processing. 

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Joetsu, Japan

Katshiro Kobayashi