Growing community of inventors

Helsinki, Finland

Katja Väyrynen

Average Co-Inventor Count = 3.64

ph-index = 2

The patent ph-index is calculated by counting the number of publications for which an author has been cited by other authors at least that same number of times.

Forward Citations = 281

Katja VäyrynenMikko Ritala (13 patents)Katja VäyrynenMarkku Leskelä (13 patents)Katja VäyrynenTimo Hatanpää (8 patents)Katja VäyrynenAnton Vihervaara (2 patents)Katja VäyrynenKatja Väyrynen (13 patents)Mikko RitalaMikko Ritala (76 patents)Markku LeskeläMarkku Leskelä (72 patents)Timo HatanpääTimo Hatanpää (45 patents)Anton VihervaaraAnton Vihervaara (5 patents)
..
Inventor’s number of patents
..
Strength of working relationships

Company Filing History:

1. Asm IP Holding B.v. (13 from 1,132 patents)


13 patents:

1. 12173402 - Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus

2. 12106965 - Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures

3. 11959171 - Methods of forming a transition metal containing film on a substrate by a cyclical deposition process

4. 11952658 - Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material

5. 11814715 - Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material

6. 11499222 - Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material

7. 11492703 - Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material

8. 11410851 - Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures

9. 11390946 - Methods of forming a transition metal containing film on a substrate by a cyclical deposition process

10. 10741403 - Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures

11. 10731249 - Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus

12. 10468262 - Methods for forming a metallic film on a substrate by a cyclical deposition and related semiconductor device structures

13. 10468261 - Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures

Please report any incorrect information to support@idiyas.com
idiyas.com
as of
12/15/2025
Loading…