Ict Integrated Circuit Testing Gesellschaft Fur Halbleiterpruftechnik Mbh

Kathrin Mohler

John Breuer

Dominik Patrick Ehberger

Ivo Liska

A method of forming a multipole device () for influencing an electron beam () is provided. The method is carried out in an electron beam apparatus () that comprises an aperture body () having at least one aperture opening (). The method comprises directing the electron beam () onto two or more surface portions of the aperture body () on two or more sides of the at least one aperture opening () to generate an electron beam-induced deposition pattern () configured to act as a multipole in a charged state, particularly configured to act as a quadrupole, a hexapole and/or an octupole. The electron beam-induced deposition pattern () can be an electron beam-induced carbon or carbonaceous pattern. Further provided are methods of influencing an electron beam in an electron beam apparatus, particularly with a multipole device as described herein. Further provided is a multipole device for influencing an electron beam in an electron beam apparatus in a predetermined manner.

Growing community of inventors

Olching, Germany

Kathrin Mohler