Aviza Technology Limited

Aviza Europe Limited

Katherine Giles

John Macneil

Christopher David Dobson

Knut Beekmann

Antony Paul Wilby

Sajid Ishaq

Hervé Gris

This invention relates to a method and apparatus for forming a film on the substrate. The method comprises supplying to the chamber in gaseous or vapor form a silicon containing organic compound and an oxidizing agent in the presence of a plasma to deposit a film on the substrate and setting the film such that carbon containing groups are retained therein. In particular embodiments the setting is achieved by exposing the film to Hplasma.

Method and apparatus for forming a film on a substrate

A low k dielectric layer is formed by depositing an unset dielectric layer on a substrate, the dielectric layer including Silicon, Carbon and Oxygen. The surface of the dielectric layer exposed to an activated gas to form a semi-permeable skin on or of the surface of the layer. The layer is then cured to render at least part of the layer porous.

Forming low k dielectric layers

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Briston, United Kingdom

Katherine Giles