Infineon Technologies Ag

Infineon Technologies Austria Ag

Katharina Teichmann

Alexander Herbrandt

Matteo Dainese

Michael Ehmann

Saurabh Roy

Johanna Schlaminger

Hiroshi Narahashi

Sigrid Wabnig

A method for fabricating a semiconductor device comprises depositing a TiW layer on a semiconductor substrate, depositing a Ti layer on the TiW layer, depositing a Ni alloy layer on the Ti layer, depositing an Ag layer on the Ni alloy layer, at least partially covering the Ag layer with photoresist, wet etching the Ag layer and the Ni alloy layer, and dry etching the Ti layer and the TiW layer.

Method for fabricating a semiconductor device using wet etching and dry etching and semiconductor device

An electronic assembly includes an electronic module and an electric part. The electronic module includes an electrically conductive press-fit terminal. The electrically conductive press-fit terminal has a press-fit section. The electric part has a contact hole. The press-fit section is inserted in the contact hole and plastically deformed therein, such that the press-fit section both mechanically and electrically contacts the electric part in the plastically deformed state. A corresponding method of assembly is also described.

Electronic module with an electrically conductive press-fit terminal having a press-fit section

An electronic assembly has an electronic module and an electric part. The electronic module has an electric terminal having a press-fit section. The press-fit section includes at least one of the following CuFeP; CuZr; CuCrZr; CuMg; CuCrTiSi; CuCrAgFeTiSi; and CuNiSiMg. The electric part has a contact hole. The electronic assembly includes a press-fit connection between the press-fit section and the electric part. In that press-fit connection, the press-fit section both mechanically and electrically contacts the electric part.

Method for electrically connecting an electronic module and electronic assembly

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Munich, Germany

Katharina Teichmann