Asml Netherlands B.v.

Asml Holding N.v.

Lsi Logic Corporation

Kars Zeger Troost

Arno Jan Bleeker

Johannes Jacobus Matheus Baselmans

Karel Diederick Van Der Mast

Dominicus Jacobus Petrus Adrianus Franken

Willem Jurrianus Venema

Vitaliy Prosyentsov

Adrianus Martinus Van Der Wielen

Pieter Willem Herman De Jager

Wim Tjibbo Tel

Azat M Latypov

Peter Conrad Kochersperger

Jason Douglas Hintersteiner

Paul Frank Luehrmann

Stefan Geerte Kruijswijk

Paul Jacques Van Wijnen

James Sherwood Greeneich

Rard Willem De Leeuw

Patricius Aloysius Jacobus Tinnemans

Jang Fung Chen

Duan-Fu Stephen Hsu

Christian Wagner

Robert John Socha

Wilhelmus Josephus Box

Stanislav Y Smirnov

Nicholas K Eib

Donis George Flagello

Louis John Markoya

Lev Ryzhikov

Neal Patrick Callan

Wenceslao A Cebuhar

Minne Cuperus

Lambertus Gerardus Maria Kessels

Richard Carl Zimmerman

Henricus Gerardus Tegenbosch

Bernardo Kastrup

Nabila Baba-Ali

Johan Christiaan Gerard Hoefnagels

Ronald Peter Albright

Martinus Hendricus Hendricus Hoeks

Eelco Van Setten

Kamen Hristov Chilov

Adrianus Johannes Henricus Maas

Ronnie Florentius Van T Westeinde

Marce Mathijs Theodore Marie Dierichs

Arno Jano Bleeker

A method for source mask optimization with a lithographic projection apparatus. The method includes determining a multi-variable source mask optimization function using a plurality of tunable design variables for an illumination system of the lithographic projection apparatus, a projection optics of the lithographic projection apparatus to image a mask design layout onto a substrate, and the mask design layout. The multi-variable source mask optimization function may account for imaging variation across different positions in an exposure slit corresponding to different stripes of the mask design layout exposed by a same slit position of the exposure apparatus. The method includes iteratively adjusting the plurality of tunable design variables in the multi-variable source mask optimization function until a termination condition is satisfied.

Method for high numerical aperture thru-slit source mask optimization

A lithographic reticle is illuminated to transfer a pattern to a substrate, inducing distortions due to heating. The distortions are calculated using reference marks in a peripheral portion of the reticle and measuring changes in their relative positions over time. A plurality of cells are defined for which a system of equations can be solved to calculate a dilation of each cell. In an embodiment, each equation relates positions of pairs of marks to dilations of the cells along a fine (s, s, s) connecting each pair. Local positional deviations can be calculated for a position by combining calculated dilations for cells between at least one measured peripheral mark and the position. Corrections can be applied in accordance with the result of the calculation. Energy may be applied to the patterning device (for example by thermal input or mechanical actuators) to modify a distribution of the local positional deviations.

Method of operating a patterning device and lithographic apparatus

A lithographic reticle is illuminated to transfer a pattern to a substrate, inducing distortions due to heating. The distortions are calculated using reference marks in a peripheral portion of the reticle and measuring changes in their relative positions over time. A plurality of cells are defined for which a system of equations can be solved to calculate a dilation of each cell. In an embodiment, each equation relates positions of pairs of marks to dilations of the cells along a line (s, s1, s2) connecting each pair. Local positional deviations can be calculated for a position by combining calculated dilations for cells between at least one measured peripheral mark and the position. Corrections can be applied in accordance with the result of the calculation. Energy may be applied to the patterning device (for example by thermal input or mechanical actuators) to modify a distribution of the local positional deviations.

A lithographic reticle is illuminated to transfer a pattern to a substrate, inducing distortions due to heating. The distortions are calculated using reference marks in a peripheral portion of the reticle and measuring changes in their relative positions over time. A plurality of cells are defined for which a system of equations can be solved to calculate a dilation of each cell. In an embodiment, each equation relates positions of pairs of marks to dilations of the cells along a line (s, s, s) connecting each pair. Local positional deviations can be calculated for a position by combining calculated dilations for cells between at least one measured peripheral mark and the position. Corrections can be applied in accordance with the result of the calculation. Energy may be applied to the patterning device (for example by thermal input or mechanical actuators) to modify a distribution of the local positional deviations.

A system and method are used to manufacture a device using at least one exposure step. Each exposure step projects a patterned beam of radiation onto a substrate. The patterned beam includes a plurality of pixels. Each pixel delivers a radiation dose no greater than a predetermined normal maximum dose to the target portion in the exposure step and/or at least one selected pixel delivers an increased radiation dose, greater than the normal maximum dose. The increased dose may be delivered to compensate for the effect of a defective element at a known position in the array on a pixel adjacent a selected pixel or compensate for underexposure of the target portion at the location of a selected pixel resulting from exposure of that location to a pixel affected by a known defective element in another exposure step.

Lithographic apparatus and device manufacturing method using dose control

A lithographic apparatus including an exposure unit that exposes parallel lines on a target area of a substrate by projecting two beams of radiation onto the substrate. The two beams of radiation are projected such that they interfere with each other to form the parallel lines. An actuator continuously moves the substrate relative to the exposure unit, while the exposure unit exposes the parallel lines on the target areas on the substrate.

Lithographic apparatus and device manufacturing method using interferometric and other exposure

An iterative method of producing optimized setpoint data for controlling the actuation of elements of an array of individually controllable elements in a maskless system and systems therefore. The optimization is based on estimation of a device structure that can utilizes one or more of the following factors: the low-pass characteristics of the projection system, the configuration of the illumination system, and the process window properties.

Lithographic system, device manufacturing method, setpoint data optimization method, and apparatus for producing optimized setpoint data

A maskless lithography system has a patterning array assembly formed by a plurality of patterning arrays, each patterning array having a substrate. Each patterning array has a plurality of individually controllable elements to endow an incoming radiation beam with a patterned cross-section. To reduce the global unflatness of the patterning array assembly that is oriented in a first plane, the position of at least one substrate of a patterning array is adjusted to a second orientation. Reduction of the global unflatness of the patterning array assembly reduces a telecentricity error without introducing additional error into the maskless lithography system.

Lithographic apparatus and device manufacturing method

A lithographic system is provided in which an extent of overlap between pattern sections is adjusted in order to match a size of a pattern section to a size of a repeating portion of the pattern to be formed.

Optimal rasterization for maskless lithography

Lithographic apparatus using an array of individually controllable elements in which a fraction of the intensity of the beam of radiation patterned by the array of individually controllable elements is diverted to an image sensor for verifying the quality of the image generated.

A system and method are used to direct a radiation beam to illuminate non-perpendicularly a patterning array of individually controllable elements used for patterning the radiation beam. The individually controllable elements can change a telecentricity of the radiation beam. Projection of the radiation beam onto the individually controllable elements can be by a concave mirror or use a folding mirror placed in an object field of the individually controllable elements. Alternatively, the individually controllable elements can change the optical axis of the radiation beam.

A lithographic system and method are provided that allow for variations of a basic device design to be generated without substantially increasing the cost of the data path hardware. The lithographic apparatus includes an array of individually controllable elements, a control system, a first data buffer, and a second data buffer. The control system provides control signals to the array of individually controllable elements. The first data buffer stores pattern data that corresponds to a pattern to be exposed on a plurality of areas on the substrate. The second data buffer stores pattern variation data, corresponding to at least one change to a part of the pattern. The control system is configured, such that at least one variation of the pattern is exposed on one of the areas on the substrate with the pattern variation data.

Lithographic apparatus and device manufacturing method utilizing multiple die designs on a substrate using a data buffer that stores pattern variation data

A method and system are used to modify pattern data obtained in relation to a pattern on a static patterning device. It is suggested that, in an example when a maskless lithography tool is used, continuous OPC-enhanced features used for maskless lithography rasterization should include a variation in local amplitude and phase transmittance that matches modulation capabilities of a patterning device being used. The modified pattern data is used by a dynamic patterning device to pattern impinging light, which is then projected onto an object. The system and method comprise using a pattern data generating device, a modification device, a dynamic pattern generator, and a projection system. The pattern data generating device generates pattern data corresponding to a pattern on a static patterning device. The modification device receives the pattern data and modifies the pattern data using characteristics of a type of the dynamic pattern generator being used. The dynamic pattern generator receives the modified patterned data and uses the modified pattern data to pattern the beam of radiation. The projection system projects the patterned beam onto the object.

System and method for generating pattern data used to control a pattern generator

A rework station and a metrology device(s) are incorporated into a lithographic processing cell so that a faulty substrate can be reworked directly and reprocessed without, for example, an overhead involved in changing masks, etc.

Lithographic processing cell, lithographic apparatus, track and device manufacturing method

A method of transferring an image of a pattern layout onto a surface of a substrate including selecting a first illumination profile for a first area of the pattern layout and a second illumination profile for a second area of the pattern layout; switching illumination profile during transfer of the image of the pattern layout such that the first area of the pattern layout is illuminated with the first illumination profile and the second area is illuminated with the second illumination profile; and projecting an image of the illuminated first and second areas onto the surface of the substrate.

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Waalre, Netherlands

Kars Zeger Troost