Disco Corporation

Karl Heinz Priewasser

Hitoshi Hoshino

Hiroshi Morikazu

Nao Hattori

Dietmar Mayer

Tzanimir Arguirov

Kazuma Sekiya

Kenji Furuta

Kentaro Odanaka

Naoko Yamamoto

Hideyuki Sandoh

Heidi Lan

Wakana Onoe

Kensuke Nagaoka

Devin Martin

Masatoshi Wakahara

Yasuyoshi Yubira

Akiko Kigawa

Roland Zimmermann

Meiya Piao

A substrate having a first side and a second side opposite to the first side is processed by attaching a protective film to the first side and, after attachment, processing the substrate from the second side of the substrate. After processing from the second side, the second side is inspected for defects on the second side of the substrate. After inspection for defects, a support film is attached to the second side of the substrate. The protective film is removed from the first side of the substrate and, after removing the protective film, the first side of the substrate is inspected for defects on the first side of the substrate.

Method of processing a substrate and system for processing a substrate

The invention relates to a method of processing a workpiece having a first surface, a second surface opposite the first surface, and a third surface extending between the first and second surfaces. The method comprises forming modified regions inside the workpiece so as to create openings in the workpiece. The openings extend to at least one of the first surface, the second surface and the third surface. The method further comprises, after forming the modified regions inside the workpiece, introducing a liquid medium into at least some of the openings and, after introducing the liquid medium into the at least some of the openings, applying an external stimulus to the liquid medium so as to increase the volume of the medium. Moreover, the invention relates to a workpiece processing system for performing this method.

Method of processing a workpiece and system for processing a workpiece

Methods of processing a substrate having one side and an opposite side include providing a protective film having a front surface and a back surface, and applying a water-soluble material to at least a central area of the front surface of the protective film and/or applying a water-soluble material to at least a central portion of the one side of the substrate. The protective film is applied to the one side of the substrate, wherein the front surface of the protective film faces the one side of the substrate and no adhesive is between at least the central area of the front surface of the protective film and the one side of the substrate. An external stimulus is applied to the protective so that the protective film is attached to the one side of the substrate, and the substrate can be processed.

Method of processing a substrate

The invention relates to a method of producing a substrate. The method comprises providing a workpiece having a first surface and a second surface opposite the first surface, and providing a carrier having a first surface and a second surface opposite the first surface. The method further comprises attaching the carrier to the workpiece, wherein at least a peripheral portion of the first surface of the carrier is attached to the first surface of the workpiece, and forming a modified layer inside the workpiece. Moreover, the method comprises dividing the workpiece along the modified layer, thereby obtaining the substrate, wherein the substrate has the carrier attached thereto, and removing carrier material from the side of the second surface of the carrier in a central portion of the carrier so as to form a recess in the carrier. The invention further relates to a substrate producing system for performing this method.

Method of producing a substrate and system for producing a substrate

A method of processing a wafer includes a wafer preparing step of preparing a measurement wafer and a product wafer, a measurement etching step of supplying a gas in a plasma state to first areas of the measurement wafer that correspond to streets thereon to form grooves in the measurement wafer, a measuring step of demarcating a plurality of concentric areas in an array from a center to an outer circumference of the measurement wafer, and measuring depths of the grooves in the respective concentric areas, a thickness adjusting step of adjusting a thickness of the product wafer such that the product wafer is progressively thinner in areas thereof that correspond to the areas of the measurement wafer where the grooves are shallower, and an etching step of supplying a gas in a plasma state to second areas of the product wafer that correspond to streets thereon.

Method of processing wafer

A substrate having a first side and a second side opposite the first side is processed by providing a protective film having a front surface and a back surface opposite the front surface and providing a holding frame for holding the substrate. The holding frame has a central opening. The holding frame is attached to the back surface of the protective film so as to close the central opening of the holding frame by the protective film, and the first side of the substrate or the second side of the substrate is attached to the front surface of the protective film. The substrate is processed from the side of the substrate which is opposite the side of the substrate attached to the front surface of the protective film, and/or the side of the substrate which is attached to the front surface of the protective film.

A wafer having on one side a device area with a plurality of devices is processed by providing a protective film and applying the protective film, for covering the devices on the wafer, to the one side of the wafer, so that a front surface of the protective film is in direct contact with the one side of the wafer. The protective film is heated during and/or after applying the protective film to the one side of the wafer, so that the protective film is attached to the one side of the wafer, and the side of the wafer opposite to the one side is processed. Further, the invention relates to a method of processing such a wafer in which a liquid adhesive is dispensed only onto a peripheral portion of a protective film and/or only onto a peripheral portion of the wafer.

Wafer processing with a protective film and peripheral adhesive

A protective sheeting for use in processing a semiconductor-sized wafer includes a protective film and a cushioning layer attached to a back surface of the protective film. At least in a central area of the protective sheeting, no adhesive is applied to a front surface and a back surface of the protective sheeting, the central area having an outer diameter which is equal to or larger than an outer diameter of the semiconductor-sized wafer. Further, a protective sheeting for use in processing a wafer has a protective film and a cushioning layer attached to a back surface of the protective film, wherein, on an entire front surface and an entire back surface of the protective sheeting, no adhesive is applied. A handling system for a semiconductor-sized wafer and to a combination of a wafer and the protective sheeting are also described.

Protective sheet for use in processing wafer, handling system for wafer, and combination of wafer and protective sheeting

The invention relates to methods of processing a wafer, having on one side a device area with a plurality of devices. In particular, the invention relates to a method which comprises providing a protective film, and applying the protective film to the side of the wafer being opposite to the one side, so that at least a central area of a front surface of the protective film is in direct contact with the side of the wafer being opposite to the one side. The method further comprises applying an external stimulus to the protective film during and/or after applying the protective film to the side of the wafer being opposite to the one side, so that the protective film is attached to the side of the wafer being opposite to the one side, and processing the one side of the wafer and/or the side of the wafer being opposite to the one side.

Method of processing a wafer

A method of manufacturing a microfluidic system or microfluidic device having at least one channel includes providing a base sheet, providing a deformable intermediate layer, providing a cover film, and laminating the base sheet, the intermediate layer and the cover film so that a back surface of the intermediate layer is attached to a front surface of the base sheet and a back surface of the cover film is attached to a front surface of the intermediate layer opposite to the back surface thereof, thereby forming a laminate comprising the base sheet, the intermediate layer and the cover film. Further, the method includes applying pressure to the front surface of the intermediate layer through the cover film so as to deform the intermediate layer, thereby forming the at least one channel. The invention also relates to a microfluidic system or microfluidic device) manufactured by this method.

Microfluidic system or device and method of manufacturing a microfluidic system or device

A wafer has on one side a device area with a plurality of devices, partitioned by a plurality of division lines, and a peripheral marginal area formed around the device area. The device area is formed with a plurality of protrusions protruding from a plane surface of the wafer. The wafer is processed by providing a protective film, having a cushioning layer applied to a front surface thereof, attaching a front surface of the protective film, for covering the devices, wherein the protective film is adhered to at least the peripheral marginal area with an adhesive, and attaching a back surface of the protective film opposite to the front surface thereof to the cushioning layer. The protrusions are embedded in the cushioning. The side of the wafer opposite to the one side is ground for adjusting the wafer thickness.

Method of processing wafer and protective sheeting for use in this method

A substrate having a first surface with at least one division line and an opposite second surface is processed by attaching a protective sheeting to the first surface and applying a laser beam to the protective sheeting to form a plurality of alignment marks in the protective sheeting. The substrate has a backside layer on the second surface. A laser beam is applied to the substrate from the side of the first surface. The substrate is transparent to the laser beam and the focal point of the laser beam is located inside the substrate which is closer to the second surface than to the first surface, to form a plurality of alignment marks in the backside layer. Substrate material is removed along the division line from the side of the second surface. The alignment marks are used for aligning the substrate material removing means relative to the division line.

Substrate processing method

The invention relates to a method of producing a substrate with a functional layer. The method comprises providing a workpiece having a first surface and a second surface opposite the first surface, and forming a modified layer inside the workpiece, the modified layer comprising a plurality of modified regions. Further, the method comprises, after forming the modified layer inside the workpiece, forming the functional layer on the first surface of the workpiece and, after forming the functional layer on the first surface of the workpiece, dividing the workpiece along the modified layer, thereby obtaining the substrate with the functional layer. Dividing the workpiece along the modified layer comprises applying an external stimulus to the workpiece. Moreover, the invention relates to a substrate producing system for performing this method.

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Munich, Germany

Karl Heinz Priewasser