Merck Patent Gesellschaft MIT Beschrankter Haftung

Karl H Neisius

Hartmut Hartner

Rudolf Klug

Gunther Haas

Wilhelm Baumer

Hans-Joachim Merrem

Alois Litters

Photoresist and stripper residues can be rapidly and completely removed from semiconductor substrates after the stripping process with an aqueous post-rinsing agent which contains a nonionogenic surfactant and an organic base.

Agent and method for the removal of photoresist and stripper residues

New aminoazobenzene derivatives of the general formula I ##STR1## in which R and R' independently of one another denote hydrogen, alkyl with up to 4 C atoms or halogen,

Negatively operating photoresist composition, with radiation-absorbing

Photoresists suitable for use for forming relief structures of highly heat-resistant polymers and which contain soluble polymeric precursors which carry radiation-reactive radicals bonded through carboxylic ester groups have an increased light-sensitivity when they also contain at least one radiation-reactive, polymerizable allyl compound which has a boiling point above 180.degree., the allyl group thereof being bonded via an oxygen, sulfur and/or nitrogen atom. The highly heat-resistant polymers which can be prepared by means of these photoresists have excellent chemical, electrical and mechanical properties.

Photoresists suitable for forming relief structures of highly

Hardened photolacquer on semi-conductors and integrated circuits for etching purposes are stripped therefrom employing, preferably at a temperature above 75.degree. C., a stripping composition consisting essentially of 20-50 weight percent of at least one alkylbenzenesulfonic acid of 12-20 carbon, and 80-50 weight percent of a chlorine-free, aromatic hydrocarbon having a boiling point above 150.degree. C.

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Darmstadt, Germany

Karl H Neisius