Lam Research Corporation

Kareem Boumatar

Arul N Dhas

Christopher Ramsayer

Akhil N Singhal

Ming Chu Li

Edward J Augustyniak

A method for processing a substrate in a substrate processing system includes selectively delivering at least one of a precursor, a deposition carrier gas, and a post deposition purge gas to a processing chamber. The method includes depositing film on the substrate by generating radio frequency (RF) plasma in the processing chamber between an upper electrode and a lower electrode while supplying an RF voltage to one of the upper electrode and the lower electrode and while the precursor and the deposition carrier gas is delivered. The method includes selectively supplying a direct current (DC) bias voltage to the upper electrode or the lower electrode; moving the substrate relative to a pedestal supporting the substrate while generating the DC bias voltage; and delivering the post deposition purge gas while supplying at least a portion of the DC bias voltage to the upper electrode or the lower electrode.

Defect control and stability of DC bias in RF plasma-based substrate processing systems using molecular reactive purge gas

A substrate processing system includes a processing chamber and an upper electrode arranged in the processing chamber. A pedestal is configured to support a substrate during processing and includes a lower electrode. An RF generating system is configured to generate RF plasma between the upper electrode and the lower electrode by supplying an RF voltage. A bias generating circuit is configured to selectively supply a DC bias voltage to one of the upper electrode and the lower electrode. A start of the DC bias voltage is initiated one of a first predetermined period before the RF plasma is extinguished and a second predetermined period after the RF plasma is extinguished. A substrate movement system is configured to move the substrate relative to the pedestal while the DC bias voltage is generated.

Defect control in RF plasma substrate processing systems using DC bias voltage during movement of substrates

A substrate processing system comprises an upper electrode and a lower electrode arranged in a processing chamber. A gas delivery system selectively delivers at least one of precursor, one or more deposition carrier gases and a post deposition purge gas. An RF generating system deposits film on the substrate by generating RF plasma in the processing chamber between the upper electrode and the lower electrode by supplying an RF voltage to one of the upper electrode and the lower electrode while the precursor and the one or more deposition carrier gases are delivered by the gas delivery system. A bias generating circuit selectively supplies a DC bias voltage to one of the upper electrode and the lower electrode while the post deposition purge gas is delivered by the gas delivery system. The post deposition purge gas that is delivered by the gas delivery system includes a molecular reactant gas.

Methods for depositing film on substrates are described. In various cases, a high thermal conductivity gas such as helium is used to deposit a conditioning layer on surfaces of the reaction chamber before it is used to process substrates. The helium may be used to help atomize/vaporize a liquid reactant in a heated injection module before the reactant is delivered to the reaction chamber. In some embodiments, a purge gas including helium is used during a post-deposition purge during deposition on substrates. The disclosed embodiments allow for mixed recipe processing without having to clean the reaction chamber between recipes, and without forming a high number of particles/defects on the substrates. This allows for an improved throughput of high quality film, even where mixed recipes are used in a single reaction chamber.

Growing community of inventors

Vancouver, WA, United States of America

Kareem Boumatar