Taiyo Nippon Sanso Corporation

National Institute for Materials Science

Ube Material Industries, Ltd.

Kaoru Sakoda

Takashi Watanabe

Takayuki Watanabe

Yoshio Ishihara

Takashi Kishimoto

Satoshi Hasaka

Shinichi Yamamoto

Katsumasa Suzuki

Fumio Okada

Minoru Inoue

Nobuo Tajima

Takahisa Ohno

Kazuhiro Miyazawa

Osamu Misumi

Yoshiaki Inaishi

Manabu Shinriki

An insulating film material for plasma CVD represented by a chemical formula (1) shown below, a method of film formation using the insulating film material, and an insulating film. According to the present invention, an insulating film having a low dielectric constant and a superior copper diffusion barrier property suitable for an interlayer insulating film or the like of a semiconductor device can be obtained. In the chemical formula (1), n represents an integer of 3 to 6, and each of Rand Rindependently represents one of CH, CH, CH, CH, CH, CH, CH, CH, CH, CHand CH. 

Insulating film material, method of film formation using insulating film material, and insulating film

A granular material having a high strength and a large BET specific surface area composed of porous particles comprising calcium oxide and calcium hydroxide wherein the calcium oxide is contained in an amount of 30 to 80 weight % based on a total amount of the calcium oxide and calcium hydroxide and the porous particles have a BET specific surface area of 40 m/g or more, or composed of porous particles comprising calcium oxide, magnesium oxide, calcium hydroxide, and magnesium hydroxide wherein a ratio of an amount of magnesium to a total of an amount of calcium and an amount of magnesium is in the range of 0.05 to 0.80, a total hydroxide content in the whole particles is in the range of 1 to 20 weight % and the porous particles have a BET specific surface area of 50 m/g or more.

Granular material comprising porous particles containing calcium and/or magnesium

Growing community of inventors

Yokohama, Japan

Kaoru Sakoda