Ulvac, Inc.

Kanako Tsumagari

Masanobu Hatanaka

Michio Ishikawa

A method for manufacturing a semiconductor device that improves the reliability of a metal cap layer and productivity. The method includes an insulation layer step of superimposing an insulation layer() on a semiconductor substrate () including an element region (), a recess step of forming a recess () in the insulation layer (), a metal layer step of embedding a metal layer () in the recess (), a planarization step of planarizing a surface of the insulation layer () and a surface of the metal layer () to be substantially flush with each other, and a metal cap layer step of forming a metal cap layer () containing at least zirconium element and nitrogen element on the surface of the insulation layer () and the surface of the metal layer () after the planarization step.

Semiconductor device manufacturing method and semiconductor device manufacturing apparatus

A barrier film made of a ZrBfilm is formed by use of a coating apparatus provided with plasma generation means including a coaxial resonant cavity and a microwave supply circuit for exciting the coaxial resonant cavity, the coaxial resonant cavity including spaced apart conductors provided around the periphery of a nonmetallic pipe for reactive gas introduction, the coaxial resonant cavity having an inner height equal to an integer multiple of one-half of the exciting wavelength, the plasma generation means being constructed such that a gas injected from one end of the nonmetallic pipe is excited into a plasma state by a microwave when the gas is in a region of the nonmetallic pipe which is not covered with the conductors and such that the gas in the plasma state is discharged from the other end of the nonmetallic pipe.

Method of forming barrier film

A method for manufacturing a semiconductor device that improves the reliability of a metal cap layer and productivity. The method includes an insulation layer step of superimposing an insulation layer () on a semiconductor substrate () including an element region (), a recess step of forming a recess () in the insulation layer (), a metal layer step of embedding a metal layer () in the recess (), a planarization step of planarizing a surface of the insulation layer () and a surface of the metal layer () to be substantially flush with each other, and a metal cap layer step of forming a metal cap layer () containing at least zirconium element and nitrogen element on the surface of the insulation layer () and the surface of the metal layer () after the planarization step.

Growing community of inventors

Susono, Japan

Kanako Tsumagari