United Microelectronics Corp.

Kan-Yuan Lee

Gary Y Hong

Joe Ko

Weiching Horng

Yang-Hui Fang

A method of stabilizing an anti-reflection coating (ARC) layer is disclosed. The method provides a substrate with a dielectric layer, a conductive layer, and the ARC layer formed thereon. The ARC layer is treated in an alloy treatment step prior to forming a photoresist layer over the ARC layer, so that the specificity of the ARC layer is stabilized to allow accurate transfer of a desired pattern. A photomask with the desired pattern is provided, while a photolithographic process is then performed to transfer the pattern onto the wafer.

Method of stabilizing anti-reflection coating layer

A method of stabilizing an anti-reflection coating (ARC) layer is disclosed. The method provides a substrate with a dielectric layer, a conductive layer, and the ARC layer formed thereon. The ARC layer is treated in an ultraviolet (UV) curing step prior to forming a photoresist layer over the ARC layer, so that the specificity of the ARC layer is stabilized to allow an accurate pattern is replicated in the photoresist layer. A photomask with the desired pattern is provided, while a photolithographic process is then performed to transfer the pattern onto the wafer.

A method of fabricating shallow trench isolations (STI) which forms a substrate with a patterned first oxide layer and a patterned silicon nitride layer thereon, so that active regions are defined with openings formed between the active regions. The openings are then over etched to form trenches for fabricating the STI, followed by forming a second oxide layer that conforms to a profile of the trenches. A third oxide layer is globally formed over the second oxide layer, sidewalls of the first oxide layer, and the silicon nitride layer. A thermal process is performed to densify a portion of the third oxide layer, so that a top portion of the third oxide layer is harder than a lower portion of the third oxide layer. The excessive portion of the third oxide layer above the silicon nitride layer is removed by performing chemical mechanical polishing, which planarizes a top surface of the third oxide layer in order to complete the manufacture of the STI.

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Tainan Hsien, Taiwan

Kan-Yuan Lee