Jiangsu Leuven Instruments Co. Ltd

Imec Vzw

Jiangsu Leuven Instrumments Co Ltd

Kaidong Xu

Eric Beyne

Dongdong Hu

Na Li

Haiyang Liu

Shiran Cheng

Zheng Tao

Vasile Paraschiv

Xiaobo Liu

Song Guo

Lu Chen

Zhihao Wu

Dongchen Che

Juebin Wang

Khashayar Babaei Gavan

Hushan Cui

Xuedong Li

Ziming Liu

Zhongyuan Jiang

Zhiwen Zou

Huiqun Ren

A semiconductor device manufacturing method, wherein the etching apparatus used includes a sample loading chamber (), a vacuum transition chamber (), a reactive ion plasma etching chamber (), an ion beam etching chamber (), a film coating chamber (), and a vacuum transport chamber (). Without interrupting the vacuum, reactive ion etching is first adopted to etch to an isolation layer (); then, ion beam etching is performed to etch into a fixed layer () and stopped near a bottom electrode metal layer (), leaving only a small amount of the fixed layer (); subsequently, reactive ion etching is adopted to etch to the bottom electrode metal layer (); and finally, ion beam cleaning is performed to remove metal residues and sample surface treatment, and coating protection is performed.

Semiconductor device manufacturing method

Disclosed in the present application is an inductively coupled plasma treatment system. Said system switches the connection between a radio frequency coil and a faraday shielding device by means of a switch switching radio frequency power. When a radio frequency power supply is connected to the radio frequency coil by means of a matched network, the radio frequency power is coupled into the radio frequency coil to perform plasma treatment process. When a radio frequency power supply is connected to a faraday shielding device by means of a matched network, the radio frequency power is coupled into the faraday shielding device to perform cleaning process on a dielectric window and an inner wall of a plasma treatment cavity.

Inductively coupled plasma treatment system

Provided are a faraday cleaning device and a plasma processing system, the device comprising a reaction chamber, a bias electrode, a wafer, a chamber cover, a coupling window, an air inlet nozzle, a vertical coil, and a faraday layer, wherein the coupling window is installed at the upper end face of the chamber cover, the chamber cover is installed at the upper end face of the reaction chamber, the bias electrode is assembled inside the reaction chamber, the wafer is installed at the upper end face of the bias electrode, the air inlet nozzle is assembled inside the coupling window, the faraday layer is installed at the upper end face of the coupling window, and the vertical coil is assembled at the upper end face of the faraday layer.

Faraday cleaning device and plasma processing system

An ion beam etching system includes an etching cavity, an etching electrode, and an electrode displacement apparatus used for enabling the electrode to change a working position in the etching cavity. The electrode displacement apparatus includes a dynamic sealing mechanism, a dynamic electrode balance counterweight mechanism, an electrode displacement transmission mechanism, and an electrode displacement driving mechanism. The etching cavity includes a cavity and a cavity cover connected with the cavity. The cavity is of an irregular shape. The cavity includes a partial cylindrical body, a side plate, a tapered transition portion, and a bottom plate. The partial cylindrical body is laterally sealed by means of the side plate. The bottom plate is connected to an end of the partial cylindrical body by means of the tapered transition portion and seals the end of the partial cylindrical body.

Ion beam etching system

A wafer cutting device comprises an etching unit, including a wafer holding device and a fluid guide shroud; a gas supply unit; and a chemical reaction liquid supply unit. The wafer holding device includes a carrier disk, which is configured to fix a wafer for cutting and provided with gas apertures, and a gas passage disposed below the carrier disk. The fluid guide shroud is a double-layer structure including an inner layer, an outer layer and a hollow interlayer, located above the wafer holding device and has adjustable spacing with the wafer holding device, and regulates a flow direction of a chemical reaction liquid and protective gases. The gas supply unit supplies a protective gas to the inner layer of the shroud and supplies a protective gas to the carrier disk through the gas apertures. The chemical reaction liquid supply unit supplies the chemical reaction liquid to the interlayer.

Wafer cutting device and method

A hydrogen fluoride vapor phase corrosion method comprises: introducing a prescribed vaporized organic liquid into a reaction chamber after a vapor phase hydrogen fluoride containing water reacts, in the reaction chamber, with a wafer; the prescribed vaporized organic liquid, and the water remaining on a surface of the wafer form an azeotropic mixture; and evaporating or volatilizing the azeotropic mixture from the surface of the wafer to carry it out.

Hydrogen fluoride vapor phase corrosion method

A gas injection device, wherein comprising: a gas channel including an air inlet provided at a upper portion therein and a gas outlet provided at a lower portion therein; and a light channel including an incident light channel and a reflected light channel provided at each side of the gas channel separately, wherein gases arrives at a surface of a sample to be tested via said gas channel and flows out from a slit between said light channel, the gas outlet of gas channel, and the surface of the sample to be tested, and gases flow in a manner of laminar flow with the Peclet number of an air flow being larger than 1. The gas injection device can effectively prevent air from returning back to the measurement system.

Gas injection device

Disclosed is a wafer processing apparatus and method. The wafer processing apparatus comprises a chamber, which is a sealed structure having an openable baffle, and is internally provided with an immersion tank having a waste liquid discharge port; a vacuum system for adjusting and maintaining a pressure inside the chamber; a gas supply system comprising an inert gas supply unit and an organic solvent vapor supply unit respectively supplying an inert gas and an organic solvent vapor to the chamber; a temperature control system for adjusting the temperature inside the chamber. According to the present invention, the problems present in existing wafer drying modes can be solved, and in particular, the present invention is well adaptable to a trend of integrated circuit devices developed from a two-dimensional planar structure to a three-dimensional structure in morphology and having more and more increased density.

Wafer processing apparatus and method

According to an aspect of the present inventive concept there is provided a method of providing an implanted region in a semiconductor structure including a first region and a second region, the method comprising: providing a first implantation mask covering the first region of the semiconductor structure, the first implantation mask including a first sacrificial layer, wherein the first sacrificial layer is formed as a spin-on-carbon (SOC) layer, and a second sacrificial layer, wherein the second sacrificial layer is formed as a spin-on-glass (SOG) layer; subjecting the semiconductor structure to an ion implantation process wherein an extension of the first implantation mask is such that ion implantation in the first region is counteracted and ion implantation in the second region is allowed wherein the second region is implanted; forming a third sacrificial layer covering the second region of the semiconductor structure, wherein the third sacrificial layer includes carbon; removing the second sacrificial layer at the first region by etching, wherein the third sacrificial layer protects the second region from being affected by said etching; and removing the first sacrificial layer at the first region and the third sacrificial layer at the second region by etching.

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Leuven, Belgium

Kaidong Xu