Applied Materials, Inc.

Kai Wu

Avgerinos V Gelatos

Xi Cen

Sang Ho Yu

Amit Khandelwal

Yu Lei

Sang-Hyeob Lee

Vikash Banthia

He Ren

Joshua Collins

Feiyue Ma

Peiqi Wang

Mei Yin Chang

Mehul B Naik

Kazuya Daito

Yi Xu

Xiaoxiong Yuan

Zubin Huang

David T Or

Guoqiang Jian

Chi-Chou Lin

Feihu Wang

Chunming Zhou

Madhu Moorthy

Yakuan Yao

Yiming Lai

Seshadri Ganguli

Hao Chen

Joung Joo Lee

Wei V Tang

Jallepally Ravi

Murali K Narasimhan

Gwo-Chuan Tzu

Liqi Wu

Zhiyuan Wu

Kevin Kashefi

Lin Dong

Michael P Karazim

Wei Lei

Jingjing Liu

Mang-Mang Ling

Olkan Cuvalci

Nobuyuki Sasaki

Jing Zhou

Tom Ho Wing Yu

Kie Jin Park

Benjamin C Wang

Kiejin Park

Wei Min Chan

Jia Ye

Jing Lin

Min Heon

Ju Ik Kang

David P Thompson

Paul F Ma

Abhilash J Mayur

Jeffrey W Anthis

Sang Jin Lee

Dien-Yeh Wu

Bo Zheng

Zhebo Chen

Xinyu Fu

Mehran Behdjat

Norman L Tam

Sundar Ramamurthy

Glen T Mori

Benjamin Schmiege

Raymond Hoiman Hung

Bhushan N Zope

Wenyu Zhang

Sandesh Yadamane

Byunghoon Yoon

Hua Ai

Jenn-Yue Wang

Ryan Scott Smith

Xinming Zhang

Pulkit Agarwal

Srinivas Tokur Mohana

Ross Marshall

Yang Li

Nicolas Louis Gabriel Breil

David Santi

Jonathan Robert Bakke

Min-Han Lee

Zhibo Yuan

Emily Renuart

Wing-Cheong Lai

Averginos V Gelatos

Hua Al

Cheng Cheng

Mohammed Jaheer Sherfudeen

Dixiong Wang

Yi Luo

Xiaozhou Yu

Insu Ha

Avgerinog V Gelatos

A method and apparatus for processing a substrate are described herein. The methods and apparatus described enable the raising and lowering of a shadow ring within a process chamber either simultaneously with or separately from a plurality of substrate lift pins. The shadow ring is raised and lowered using a shadow ring lift assembly and may be raised to a pre-determined height above the substrate during a radical treatment operation. The shadow ring lift assembly may also raise and lower the plurality of substrate lift pins to enable both the shadow ring and the substrate lift pins to be raised to a transfer position when the substrate is being transferred into or out of the process chamber.

Shadow ring lift to improve wafer edge performance

Methods of depositing a metal film are discussed. A metal film is formed on the bottom of feature having a metal bottom and dielectric sidewalls. Formation of the metal film comprises exposure to a metal precursor and an alkyl halide catalyst while the substrate is maintained at a deposition temperature. The metal precursor has a decomposition temperature above the deposition temperature. The alkyl halide comprises carbon and halogen, and the halogen comprises bromine or iodine.

Gap fill methods using catalyzed deposition

Embodiments of the disclosure provided herein generally relate to a bottom cover plate (BCP) that enables control of radiation loss from a heating element inside a chamber for processing a substrate. The heating element is used to heat the substrate before or during processing and may heat the substrate unevenly due to uneven heat losses within the chamber. For example, the uneven heating of the substrate may result in uneven deposition of a material on the substrate, which may result in excess processing to correct the deposition or wasted product from disposing of improperly processed substrates. The BCP may be used to correct the uneven heating of the substrate.

Bottom cover plate to reduce wafer planar nonuniformity

Process chamber pumping liner

Apparatus and methods to provide electronic devices comprising tungsten film stacks are provided. A tungsten liner formed by physical vapor deposition is filled with a tungsten film formed by chemical vapor deposition directly over the tungsten liner.

Low resistivity tungsten film and method of manufacture

A structure is provided including a substrate and a tungsten-containing layer. The tungsten-containing layer includes a nucleation layer disposed on the substrate and a bulk layer is disposed over the nucleation layer. The nucleation layer includes tungsten and the bulk layer includes about 0.1% to about 20% atomic molybdenum. The tungsten-containing layer includes a film stress of about 350 MPa to about 450 MPa.

Tungsten molybdenum structures

Exemplary semiconductor processing methods include forming a via in a semiconductor structure. The via may be defined in part by a bottom surface and a sidewall surface formed in the semiconductor structure around the via. The methods may also include depositing a tantalum nitride (TaN) layer on the bottom surface of the via. In embodiments, the TaN layer may be deposited at a temperature less than or about 200° C. The methods may still further include depositing a titanium nitride (TiN) layer on the TaN layer. In embodiments, the TiN layer may be deposited at a temperature greater than or about 300° C. The methods may additionally include depositing a fill-metal on the TiN layer in the via. In embodiments, the metal may be deposited at a temperature greater than or about 300° C.

Formation of metal vias on metal lines

Method for forming tungsten gap fill on a structure, including high aspect ratio structures includes depositing a tungsten liner in the structure using a physical vapor deposition (PVD) process with high ionization and an ambient gas of argon or krypton. The PVD process is performed at a temperature of approximately 20 degrees Celsius to approximately 300 degrees Celsius. The method further includes treating the structure with a nitridation process and depositing bulk fill tungsten into the structure using a chemical vapor deposition (CVD) process to form a seam suppressed boron free tungsten fill. The CVD process is performed at a temperature of approximately 300 degrees Celsius to approximately 500 degrees Celsius and at a pressure of approximately 5 Torr to approximately 300 Torr.

Methods for low resistivity and stress tungsten gap fill

A method of forming a structure of a substrate is provided including a tungsten-containing layer including a nucleation layer and a fill layer. The method includes disposing a nucleation layer along sidewalls of the opening, wherein nucleation layer includes boron and tungsten. Disposing the fill layer over the nucleation layer within the opening, wherein a tungsten-containing layer includes a resistivity of about 16 μΩ·cm or less, wherein a tungsten-containing layer has a thickness of about 200 Å to about 600 Å, and wherein a tungsten-containing layer thickness is half a width of the tungsten-containing layer disposed within the opening between opposing sidewall portions of the opening.

Methods for forming low resistivity tungsten features

Some embodiments of the disclosure relate to methods for forming a bottom-up tungsten gapfill. Some embodiments of the disclosure relate to methods for reducing the deposition rate of tungsten by chemical vapor deposition. A molybdenum halide precursor is added to a tungsten halide precursor and a reductant. The co-flow of tungsten halide and molybdenum halide demonstrates either reduced or eliminated tungsten growth.

Tungsten gapfill using molybdenum co-flow

A method of forming a tungsten-containing layer over a substrate includes a) positioning a substrate on a substrate support in a process volume of a process chamber; b) providing a precursor gas to the process volume of the process chamber for a first duration; and c) providing a tungsten-containing gas to the process volume of the process chamber by opening a pulsing valve on a tungsten-containing gas delivery line for a second duration occurring after the first duration to form a tungsten-containing layer on the substrate. The tungsten-containing gas delivery line includes a first section connected to an inlet of the pulsing valve and a second section connected to an outlet of the pulsing valve, the first section connects the inlet of the pulsing valve to a reservoir of tungsten-containing gas, the second section connects the outlet of the pulsing valve to an inlet of the process chamber.

Gas delivery for tungsten-containing layer

Catalyst enhanced molybdenum deposition and gap fill

Methods and apparatus for low resistivity and stress tungsten gap fill

Methods for pre-cleaning substrates having metal and dielectric surfaces are described. The substrate is exposed to a strong reductant to remove contaminants from the metal surface and damage the dielectric surface. The substrate is then exposed to an oxidation process to repair the damage to the dielectric surface and oxidize the metal surface. The substrate is then exposed to a weak reductant to reduce the metal oxide to a pure metal surface without substantially affecting the dielectric surface. Processing tools and computer readable media for practicing the method are also described.

Multi-step pre-clean for selective metal gap fill

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Palo Alto, CA, United States of America

Kai Wu