Taiwan Semiconductor Manufacturing Comp. Ltd.

Kai-Lin Chuang

Jun Xiu Liu

Chung-Pin Chou

Yan-Cheng Chen

Jun-Xiu Liu

Tsung-Chi Chen

Chun-Wei Huang

Pei-Jung Chang

Zhi-Chang Lin

Shih-Cheng Chen

Jung-Hung Chang

Sheng-Wen Huang

Jeng-Huei Yang

Wei-Chih Hsu

Yuan-Chi Chien

Chih-Hao Wang

Kuo-Cheng Chiang

Chien Ning Yao

Kuo-cheng Chiang

Chien-Ning Yao

Tsung-Han Chuang

Sheng-Ching Kao

Yu-Jen Yang

Jui Kuo Lai

A device includes a channel layer, a gate structure, a first source/drain epitaxial structure, a second source/drain epitaxial structure, and a sidewall spacer. The channel layer is over a substrate. The gate structure wraps around the channel layer. The first source/drain epitaxial structure and the second source/drain epitaxial structure are on opposite sides of the channel layer. The sidewall spacer is on a sidewall of the first source/drain epitaxial structure and includes a first dielectric layer and a second dielectric layer over the first dielectric layer and in contact with first source/drain epitaxial structure. The first dielectric layer and the second dielectric layer include different materials.

Method of manufacturing a semiconductor device including forming a sidewall spacer on a sidewall of a channel structure

A semiconductor device structure is provided. The semiconductor device structure includes a plurality of first nanostructures stacked over a substrate in a vertical direction. The semiconductor device structure also includes a first bottom layer formed adjacent to the first nanostructures, and a first dielectric liner layer formed over the first bottom layer and adjacent to the first nanostructures. The semiconductor device structure further includes a first source/drain (S/D) structure formed over the first dielectric liner layer, and the first S/D structure is isolated from the first bottom layer by the first dielectric liner layer.

Semiconductor device structure including stacked nanostructures

A process tube device can detect the presence of any external materials that may reside within a fluid flowing in the tube. The process tube device detects the external materials in-situ which obviates the need for a separate inspection device to inspect the surface of a wafer after applying fluid on the surface of the wafer. The process tube device utilizes at least two methods of detecting the presence of external materials. The first is the direct measurement method in which a light detecting sensor is used. The second is the indirect measurement method in which a sensor utilizing the principles of Doppler shift is used. Here, contrary to the first method that at least partially used reflected or refracted light, the second method uses a Doppler shift sensor to detect the presence of the external material by measuring the velocity of the fluid flowing in the tube.

In-situ apparatus for detecting abnormality in process tube

An apparatus for inspecting a semiconductor substrate includes a rotatable base configured to support a substrate, and a nozzle arm includes a nozzle and a light monitoring device. The light monitoring device includes a laser transmitter and an array of light sensors arranged in the nozzle arm and facing the substrate. The light monitoring device is configured to transmit a laser pulse towards the substrate, wherein the laser pulse impinges on the substrate, receive a reflected laser pulse from the substrate, calculate whether one or more light sensors received the laser pulse, and calculate a distance between the light monitoring device and the substrate using the turnaround time for determining a process quality on the substrate.

Apparatus and methods for determining fluid dynamics of liquid film on wafer surface

A method of manufacturing a semiconductor device includes: receiving a workpiece on which the semiconductor device is manufactured; causing a nozzle to dispense a fluid toward a surface of the workpiece external to the nozzle, wherein the nozzle includes a first channel and a second channel that allow the fluid to flow through; emitting light, by a light source, from within the nozzle toward the surface while the nozzle is dispensing the fluid; receiving light reflected from the surface by a light sensor, the light source and the light sensor being disposed within the nozzle and opposite to each other, and the emitted light and the reflected light adapted to be contained within the fluid; and examining a status of the reflected light. The emitted light and the reflected light propagate in a direction parallel to a longitudinal axis of each of the first channel and the second channel.

Nozzle having real time inspection functions

Some implementations described herein provide techniques and apparatuses for a semiconductor processing tool including an electrostatic chuck having a voltage-regulation system to regulate an electrical potential throughout regions of a semiconductor substrate positioned above the electrostatic chuck. The voltage-regulation system may determine that an electrical potential within a region of the semiconductor substrate does not satisfy a threshold. The voltage-regulation system may, based on determining that the electrical potential throughout the region does not satisfy the threshold, position one or more electrically-conductive pins within the region. While positioned within the region, the one or more electrically-conductive pins may change the electrical potential of the region.

Semiconductor processing tool and methods of operation

A method of monitoring a fluid includes: applying the fluid from within a nozzle to a surface of a wafer outside of the nozzle; emitting light, by a light source, from the nozzle to the surface; receiving light reflected from the surface by a light sensor and causing the reflected light to propagate into the nozzle; and determining whether a variation of the fluid occurs according to the reflected light.

A method includes disposing a semiconductor substrate over a chuck. The chuck has a plurality of holes therein. The semiconductor substrate has a first surface facing the chuck and a second surface opposite thereto. A liquid layer is formed flowing over a top surface of the chuck by supplying liquid to the top surface of the chuck through the holes of the chuck. The semiconductor substrate is moved toward the chuck such that the first surface of the semiconductor substrate is in contact with the liquid layer and the liquid layer flows between the first surface of the semiconductor substrate and the top surface of the chuck.

Method of processing semiconductor substrate

A nozzle for emitting a fluid comprises a channel, a light source and a light sensor. The channel is configured to flow the fluid. The light source is configured to emit light towards a surface on which the fluid is applied and the light sensor is configured to receive reflected light from the surface.

An apparatus of processing a semiconductor substrate include a chuck, a holder, a liquid supplying system and a positive pressure unit. The chuck has a principal surface and at least a hole formed thereon. The holder is capable of holding a semiconductor substrate at a position above the principal surface. The liquid supplying system is configured to provide a liquid film onto the principal surface through the hole. The positive pressure unit is configured for providing a gas flow to a space over the chuck. A method of processing a semiconductor substrate is disclosed herein as well.

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Chia-Yi, Taiwan

Kai-Lin Chuang