Lam Research Corporation

Ceradyne, Inc.

K Y Ramanujam

Mukund Srinivasan

Travis R Taylor

Ramesh Gopalan

Biljana Mikijelj

Sridharan Srivatsan

Bobby Kadkhodayan

Shanghua Wu

A method of increasing mean time between cleans of a plasma etch chamber and chamber parts lifetimes is provided. Semiconductor substrates are plasma etched in the chamber while using at least one sintered silicon nitride component exposed to ion bombardment and/or ionized halogen gas. The sintered silicon nitride component includes high purity silicon nitride and a sintering aid consisting of silicon dioxide. A plasma processing chamber is provided including the sintered silicon nitride component. A method of reducing metallic contamination on the surface of a silicon substrate during plasma processing is provided with a plasma processing apparatus including one or more sintered silicon nitride components. A method of manufacturing a component exposed to ion bombardment and/or plasma erosion in a plasma etch chamber, comprising shaping a powder composition consisting of high purity silicon nitride and silicon dioxide and densifying the shaped component.

High lifetime consumable silicon nitride-silicon dioxide plasma processing components

A method for preventing de-lamination of semiconductor wafer film stacks during a linear belt-type chemical mechanical planarization (CMP) process is provided. The method implements a pulsed polishing head rotation during a CMP process to maintain a slurry distribution across the width of a belt pad. The slurry distribution is maintained in a manner that prevents de-lamination of a wafer film having weak adhesion characteristics. Thus, the pulsed polishing head rotation implemented by the method reduces de-lamination of low-K material film layers during the CMP process.

Method for reducing or eliminating de-lamination of semiconductor wafer film layers during a chemical mechanical planarization process

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Fremont, CA, United States of America

K Y Ramanujam