Richtek Technology Corporation, R.o.c

K C Chang

Tsung-Yi Huang

Hung-Der Su

Tsung-Chieh Hsiao

Chien-Wei Chiu

Chih-Fang Huang

Ting-Fu Chang

Tsung-Yu Yang

Po-Chin Peng

Ya-Hsien Liu

The present invention discloses a high electron mobility transistor (HEMT) and a manufacturing method thereof. The HEMT device includes: a substrate, a first gallium nitride (GaN) layer; a P-type GaN layer, a second GaN layer, a barrier layer, a gate, a source, and a drain. The first GaN layer is formed on the substrate, and has a stepped contour from a cross-section view. The P-type GaN layer is formed on an upper step surface of the stepped contour, and has a vertical sidewall. The second GaN layer is formed on the P-type GaN layer. The barrier layer is formed on the second GaN layer. two dimensional electron gas regions are formed at junctions between the barrier layer and the first and second GaN layers. The gate is formed on an outer side of the vertical sidewall.

High electron mobility transistor and manufacturing method thereof

Growing community of inventors

Taipei, Taiwan

K C Chang