Taiwan Semiconductor Manufacturing Comp. Ltd.

Jyun-Ru Wu

Ying-Lang Wang

Shih-Chieh Chang

Szu-An Wu

Jian-Shin Tsai

Chih-Chang Huang

Ing-Ju Lee

Ching-Yao Sun

Ching-Che Huang

Shiu-Ko JangJian

Chi-Cheng Hung

Yu-Sheng Wang

Jun-Nan Nian

Yu-Ren Peng

A device includes a semiconductor substrate having a front side and a backside. A photo-sensitive device is disposed at a surface of the semiconductor substrate, wherein the photo-sensitive device is configured to receive a light signal from the backside of the semiconductor substrate, and convert the light signal to an electrical signal. An amorphous-like adhesion layer is disposed on the backside of the semiconductor substrate. The amorphous-like adhesion layer includes a compound of nitrogen and a metal. A metal shielding layer is disposed on the backside of the semiconductor substrate and contacting the amorphous-like adhesion layer.

Metal shielding layer in backside illumination image sensor chips and methods for forming the same

A method of electroplating a metal into a recessed feature is provided, which includes: contacting a surface of the recessed feature with an electroplating solution comprising metal ions, an accelerator additive, a suppressor additive and a leveler additive, in which the recessed feature has at least two elongated regions and a cross region laterally between the two elongated regions, and a molar concentration ratio of the accelerator additive:the suppressor additive:the leveler additive is (8-15):(1.5-3):(0.5-2); and electroplating the metal to form an electroplating layer in the recessed feature. An electroplating layer in a recessed feature is also provided.

Method of electroplating metal into recessed feature and electroplating layer in recessed feature

A method of electroplating a metal into a recessed feature is provided, which includes: contacting a surface of the recessed feature with an electroplating solution comprising metal ions, an accelerator additive, a suppressor additive and a leveler additive, in which the recessed feature has at least two elongated regions and a cross region laterally between the two elongated regions, and a molar concentration ratio of the accelerator additive: the suppressor additive: the leveler additive is (8-15):(1.5-3):(0.5-2); and electroplating the metal to form an electroplating layer in the recessed feature. An electroplating layer in a recessed feature is also provided.

Growing community of inventors

Tainan, Taiwan

Jyun-Ru Wu