Infineon Technologies Austria Ag

Jyotshna Bhandari

Martin Poelzl

Ling Ma

Martin Henning Vielemeyer

Robert Paul Haase

Britta Wutte

Heimo Hofer

Ashita Mirchandani

Harsh Naik

Stanislav Vitanov

Werner Schustereder

Maximilian Roesch

Georg Ehrentraut

Christian Ranacher

Gerald Patterer

The application relates to a semiconductor power device including a semiconductor body in which a transistor device is formed, the transistor device having a gate region and a channel region laterally aside the gate region, the gate region including a gate electrode for controlling a channel formation in the channel region, and a gate dielectric laterally between the channel region and the gate electrode. The gate electrode includes a gate electrode bulk region and a gate electrode layer laterally between the gate dielectric and the gate electrode bulk region. The gate electrode layer is made of a doped metallically conductive material.

Semiconductor power device and method of manufacturing the same

A method for manufacturing a semiconductor transistor device includes etching a vertical gate trench into a silicon region, depositing a silicon gate material on an interlayer dielectric formed in the vertical gate trench so that an upper side of the interlayer dielectric is covered, etching through the silicon gate material in the vertical gate trench to partly uncover the upper side of the interlayer dielectric and so that a silicon gate region of a gate electrode of the semiconductor transistor device remains in the vertical gate trench, and depositing a metal material into the vertical gate trench so that the partly uncovered upper side of the interlayer dielectric is covered by the metal material.

Semiconductor transistor device and method of manufacturing the same

This application relates to semiconductor die including: a transistor device formed in an active area of a semiconductor body and having a channel region, a gate region, and a field electrode region, the gate region arranged laterally aside the channel region and having a gate electrode for controlling a current flow in the channel region, the gate electrode formed in a gate trench extending into the semiconductor body; and an additional device formed in an additional device area of the semiconductor body. A recess extends into the semiconductor body in the additional device area, and a semiconductor material is arranged in the recess in which the additional device is formed.

Semiconductor die and method of manufacturing the same

A transistor device with a gate electrode in a vertical gate trench is described. The gate electrode includes a silicon gate region and a metal inlay region. The silicon gate region forms at least a section of a sidewall of the gate electrode. The metal inlay region extends up from a lower end of the gate electrode.

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Villach, Austria

Jyotshna Bhandari