Industrial Technology Research Institute

Jyh-Shyang Wang

Daniil Alexandrovich Livshits

Yi-Tsuo Wu

Nikolai A Maleev

Alexey R Kovsh

Kun-Fong Lin

Gray Lin

Alexey V Sakharov

A fabrication method of VCSEL is used to form a contact electrode on a VCSEL in a resonance cavity. A heavily doped layer is formed in a resonance cavity where the light intensity is the weakest. A Bragg reflector is etched while the etching stop point being above the heavily doped layer. Dopants are doped to form a high-carrier-concentration ohmic channel as a connection between an electrode and the heavily doped layer. Thereby, a contact electrode is formed on the VCSEL structure in the resonance cavity without the need of high etching precision.

VCSEL and the fabrication method of the same

An edge emitting laser with circular beam using a low-carrier-mobility diluted nitride semiconductor material for an epitaxy light-emitting layer is disclosed. The low-carrier-mobility material can greatly suppress surface recombination of carriers. The epitaxy structure established on the substrate surface includes, from bottom to top, a bottom cladding layer, a bottom waveguide layer, a light-emitting layer, an upper waveguide layer, an upper cladding layer, and an electrode contact layer. The light-emitting layer is formed from a diluted nitride material. Etching is performed from the epitaxy structure through the light-emitting layer, forming a ridge waveguide that has a large reflective index difference between the light-emitting layer and the dielectric passivation layer.

Edge emitting laser with circular beam

The specification discloses a resonant cavity device array for wavelength division multiplexing and the method for fabricating it. The structure of the resonant cavity device is selectively formed with an oxide structure, which contains more than one AlGaAs oxide tuning layer. After the oxidation of AlGaAs, AlGaO is formed to change the refractive index and the thickness, thereby changing and controlling the wavelength of the resonant cavity device. The wavelength variant of each resonant cavity device is determined by the number of layers, thicknesses and compositions of the AlGaAs oxide tuning layer contained in the selective oxide structure.

Resonant cavity device array for WDM application and the fabrication method of the same

Growing community of inventors

Hsinchu, Taiwan

Jyh-Shyang Wang