Evatec Ag

Oc Oerlikon Balzers Ag

Oerlikon Advanced Technologies Ag

Oc Oerlikon Balzers Af

Jurgen Weichart

Stanislav Kadlec

Johannes Weichart

Mohamed Elghazzali

Rogier Lodder

Sven Uwe Rieschl

Martin Schafer

A heater and/or cooler chamber includes a heat storage block or chunk. In the block a multitude of parallel, stacked slit pockets are each dimensioned to accommodate a single plate shaped workpiece. Workpiece handling openings of the slit pockets are freed and respectively covered by a door arrangement. The slit pockets are tailored to snugly surround the plate shaped workpieces therein so as to establish an efficient heat transfer between the heat storage block or chunk and the workpieces to be cooled or heated.

Chamber for degassing substrates

In a capacitive coupled etch reactor, in which the smaller electrode is predominantly etched, the surface of the larger electrode is increased by a body e.g. a plate, which is on the same electric potential as the larger electrode and which is immersed in the plasma space. A pattern of openings in which plasma may burn is provided in the body so as to control the distribution of the etching effect on a substrate placed on the smaller electrode.

RF capacitive coupled etch reactor

In a plasma reactor a pumping compartment is separate from a plasma-treating compartment by a structure which includes a central frame. The frame is suspended to the casing of the reactor via spokes. The spokes allow free expansion and contraction of the frame under thermal loading. The slits between the spokes do not allow plasma ignition there and provide for a small flow resistance between the treatment compartment and the pumping compartment. The frame may act as a downholding member for a substrate on the smaller electrode.

Vacuum plasma workpiece treatment apparatus

In a capacitively coupled etch reactor, in which the smaller electrode is etched, the larger electrode is electrically supplied by a very high frequency supply signal and by a high frequency supply signal. The smaller electrode, acting as a substrate carrier, is connected to ground potential.

RF capacitive coupled dual frequency etch reactor

An apparatus for generating sputtering of a target to produce a coating on a substrate is provided. The apparatus has a magnetron including a cathode and an anode. A power supply is operably connected to the magnetron and at least one capacitor is operably connected to the power supply. The apparatus also includes an inductance operably connected to the at least one capacitor. A first switch and a second switch are also provided. The first switch operably connects the power supply to the magnetron to charge the magnetron and the first switch is configured to charge the magnetron according to a first pulse. The second switch is operably connected to discharge the magnetron. The second switch is configured to discharge the magnetron according to a second pulse.

Arc suppression and pulsing in high power impulse magnetron sputtering (HIPIMS)

A vacuum treatment chamber includes a vacuum recipient and therein a screen. Within the screen there is provided a stationary substrate support. Within the side wall of the vacuum recipient, there is provided a substrate handling opening and in the screen, a substrate handling cut-out. A drivingly, moveable screen-shutter frees or covers the substrate handling cut-out in the screen. Thereby, horizontal loading and un-loading (L/UL) of a substrate to the stationary substrate support is possible, although establishing an overall closed screen, once a substrate is treated in the vacuum treatment chamber.

Vacuum treatment chamber and method of manufacturing a vacuum treated plate-shaped substrate

An apparatus for generating sputtering of a target to produce a coating on a substrate is provided. The apparatus comprises a magnetron including a cathode and an anode. A power supply is operably connected to the magnetron and at least one capacitor is operably connected to the power supply. A first switch is also provided. The first switch operably connects the power supply to the magnetron to charge the magnetron and the first switch is configured to charge the magnetron according to a first pulse. An electrical bias device is operably connected to the substrate and configured to apply a substrate bias.

RF substrate bias with high power impulse magnetron sputtering (HIPIMS)

A heater or cooler chamber for a batch of more than one workpiece includes a heat storage block. In the block a multitude of pockets are provided, whereby each of the pockets may be closed or opened by a controllably operated door. A heater or cooler arrangement is applied. The pockets are tailored to surround a workpiece applied therein in a non-contact closely spaced manner.

Apparatus for depositing a layer on a substrate in a process gas includes a chuck containing a first surface for supporting the substrate, a clamp for securing the substrate to the first surface of the chuck, an evacuatable enclosure enclosing the chuck and the clamp and control apparatus. The evacuatable enclosure includes an inlet, through which the processing gas is insertable into the enclosure. The control apparatus is adapted to move at least one of the chuck and the clamp relative to, and independently of, one another to adjust a spacing between the chuck and the clamp during a single deposition process while maintaining a flow of the processing gas and a pressure within the enclosure that is less than atmospheric pressure.

Apparatus for depositing a layer on a substrate in a processing gas

Method for manufacturing magnetron coated substrates, in which along the target and on its backside pointing from the substrate, a magnet arrangement is present by which along the sputter surface of the target at least one closed loop of a tunnel shaped magnetron magnetic field is generated, characterized in that for setting the sputter rate distribution the distance of a part of the magnet arrangement to the backside of the target is changed.

Method for manufacturing magnetron coated substrates and magnetron sputter source

A method of magnetically enhanced sputtering an electrically-conductive material onto interior surfaces of a trench described herein includes providing a magnetic field adjacent to a target formed at least in part from the electrically-conductive material, and applying a DC voltage between an anode and the target as a plurality of pulses. A high-frequency signal is applied to the pedestal supporting the semiconductor substrate to generate a self-bias field adjacent to the semiconductor substrate. The high-frequency signal is applied to the pedestal in pulses, during periods of time that overlap with the periods during which the DC voltage pulses are applied. The periods of time that the high-frequency signals are applied include a duration that extends beyond termination of the DC voltage pulse applied between the anode and the target. During each DC voltage pulse the electrically-conductive material is sputter deposited onto the side walls of the trench formed in the semiconductor substrate.

Application of HIPIMS to through silicon via metallization in three-dimensional wafer packaging

The invention relates to an installation, in particular a vacuum processing installation for processing a substrate (), in particular a semiconductor wafer, comprising a processing station. Said installation comprises a frame (), to which is clamped a carrier (), for holding and/or transporting the substrate (), whereby the latter () can be fastened by its entire surface to said carrier (). The processing station preferably comprises a chuck electrode () with a flat outer surface () and the carrier () can be positioned parallel and adjacent to said outer surface () of the chuck electrode (). The carrier is composed in particular of a non-conductive dielectric material and is provided on one side with a conductive layer (), in such a way that the chuck electrode () and the carrier () form an electrostatic chuck.

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Balzers, Liechtenstein

Jurgen Weichart