Fujitsu Corporation

Junko Hatta

Kiichi Sakamoto

Yoshihisa Oae

Akio Yamada

Yasushi Takahashi

Tomohiko Abe

Katsuhiko Kobayashi

Satoru Yamazaki

A method of exposing a pattern on a substrate by a charged particle beam includes the steps of energizing first and second mask deflectors provided at an upstream side of a stencil mask simultaneously to obtain a first relativistic relationship of energization between the first and second mask deflectors, energizing the first mask deflector and simultaneously the second mask deflector according to the first relativistic relationship so as to hit a selected aperture on the stencil mask, to obtain an absolute deflection of the charged particle beam as a function of the energization of the first mask deflector, energizing third and fourth mask deflectors provided at a downstream side of the stencil mask simultaneously to obtain a second relativistic relationship of energization between the third and fourth mask deflectors, and energizing the first through fourth mask deflectors according to the first and second relativistic relationship and further to the absolute relationship, such that the charged particle beam is deflected away from an optical axis and hit a selected aperture on the stencil mask while traveling parallel to the optical axis, and such that the charged particle beam passed through the stencil mask is deflected toward the optical axis and deflected again such that the charged particle beam travels toward the substrate in alignment with the optical axis.

Charged particle beam exposure system and method of exposing a pattern

A method for writing a pattern on a surface of an object by a focused electron beam with a minimized distortion of the electron beam comprises the steps of dividing the surface of the object into a plurality of parallel bands, moving the object in a direction perpendicular to the bands with a predetermined speed, achieving an exposure of the device pattern on an individual, band by band basis while moving the object with the predetermined speed. The predetermine speed is optimized with respect to an exposure interval representing a time interval in which the exposure of the band is possible. In order to minimize the distortion of the electron beam, the timing of the exposure of each band in each exposure interval is adjusted by (a) detecting a critical timing pattern that determines the optimized moving speed, (b) shifting the corresponding timing of exposure for each band, starting from the band immediately before the critical timing pattern and proceeding in a direction to the first band, such that the timing of exposure is shifted toward the center of the exposure interval to the extent that the exposure of any given band does not overlap the exposure of the next preceding band, and (c) repeating the step (b) for each of the remaining bands of the plurality of bands until the respective timing of exposure of each band reaches the center of the corresponding exposure interval.

Method for writing a pattern on an object by a focused electron beam

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Kawasaki, Japan

Junko Hatta