Mitsubishi Denki Kabushiki Kaisha

Ulvac Coating Corporation

Mitsubishi Electric Corporation

Dai Nippon Printing Co., Ltd.

Mitsubishi Electric Company

Ulcoat (ulvac Coating Corporation)

Junji Miyazaki

Nobuyuki Yoshioka

Akihiko Isao

Yaichiro Watakabe

Ryoichi Kobayashi

Hitoshi Nagata

Susumu Kawada

Shigenori Yamashita

Tsuneo Yamamoto

Atsushi Hayashi

Yoshihiro Saito

Kouichiro Narimatsu

Akira Chiba

Kazuya Kamon

Kunihiro Hosono

Akihiro Nakae

Hidehiko Kozawa

In accordance with a phase shift mask of attenuation type and a manufacturing method thereof, at a prescribed region of a phase shifter portion near and around a light transmitting portion, an auxiliary pattern is provided for controlling an amount of exposure light onto a portion of an exposed material corresponding to this region. Auxiliary pattern enables to cancel light intensity of a side lobe, thereby preventing generation of a region having a high light intensity (a side lobe) at the periphery of the light transmitting portion of the phase shift mask of attenuation type.

Phase shift mask of attenuation type and manufacturing method thereof

A phase-shifting photomask blank is made by sputtering a target of molybdenum suicide with a sputtering gas to which nitric monoxide is added in a ratio of 2.65-6.47% by volume. A nitrided-oxide film of molybdenum silicide as a phase-shifting film is formed on a transparent substrate. A base phase-shifting film may be formed on a transparent substrate and then a nitrided-oxide film of molybdenum silicide as a surface layer may be formed on top of the base phase-shifting film by sputtering a target of molybdenum silicide with a sputtering gas to which nitric monoxide is added in a ratio of 0.59-6.47% by volume. The transparent substrate on which the nitrided-oxide film of molybdenum slicide is formed may be subjected to a heat treatment at a temperature of 200.degree. C. or more.

Phase-shifting photomask blank and method of manufacturing the same as

A phase-shifting photomask blank is made by sputtering a target of molybdenum silicide with a sputtering gas to which nitric monoxide is added in a ratio of 2.65-6.47% by volume. A nitrided-oxide film of molybdenum silicide as a phase-shifting film is formed on a transparent substrate. A base phase-shifting film may be formed on a transparent substrate and then a nitrided-oxide film of molybdenum silicide as a surface layer may be formed on top of the base phase-shifting film by sputtering a target of molybdenum silicide with a sputtering gas to which nitric monoxide is added in a ratio of 0.59-6.47% by volume. The transparent substrate on which the nitrided-oxide film of molybdenum slicide is formed may be subjected to a heat treatment at a temperature of 200.degree. C. or more.

Method of manufacturing phase-shifting photomask blank

A second light transmit portion of a phase shift mask is formed of a molybdenum silicide nitride oxide, or a molybdenum silicide oxide, or a chromium nitride oxide, or a chromium oxide, or a chromium carbide nitride oxide film converting a phase of transmitted exposure light by 180.degree. and having the transmittance of at least 2% and less than 5%. In the manufacturing method of the second light transmit portion, a molybdenum silicide nitride oxide film, or a molybdenum silicide oxide film, or a chromium nitride oxide film, or a chromium oxide film, or a carbide nitride oxide film is formed by a sputtering method. Consequently, with a conventional sputtering apparatus, the second light transmit portion can be formed, and additionally, etching process of the phase shifter portion is required only once, so that probabilities of defects and errors in the manufacturing process can be decreased.

Phase shift mask and manufacturing method thereof and exposure method

A second light transmit portion of a phase shift mask is formed of a molybdenum silicide nitride oxide or a molybdenum silicide oxide a chromium nitride oxide, or a chromium oxide, or a chromium carbide nitride oxide film converting a phase of transmitted exposure light by 180.degree. and having the transmittance of 5-40%. In the manufacturing method of the second light transmit portion, a molybdenum silicide nitride oxide film or a molybdenum silicide oxide film a chromium nitride oxide film, or a chromium oxide film, or a carbide nitride oxide film is formed by a sputtering method. Consequently, with a conventional sputtering apparatus, the second light transmit portion can be formed, and additionally, etching process of the phase shifter portion is required only once, so that probabilities of defects and errors in the manufacturing process can be decreased.

By the method of exposure using attenuation type phase shift mask, based on the phase angle of exposure light passing through second and third light transmitting portions and on hole diameters of the second and third light transmitting portions, an optimal value between first and second distances h.sub.1 and h.sub.2 can be calculated. Therefore, a resist film can be exposed at optimal focal position. As a result, even when there is a step in the material to be exposed, a desired pattern can be exposed with high precision through the same steps in every region of the material to be exposed.

Method of exposure employing phase shift mask of attenuation type

A method of manufacturing a semiconductor device includes the steps of forming an interconnection layer consisting of a metal material on a substrate, and forming an anti-reflection film including a compound having metal-silicon-oxygen on this interconnection layer using the same metal material as the material used for this interconnection layer. Thus, it is made possible to form interconnection layer and anti-reflection film by the same apparatus and it is also made possible to treat interconnection layer and anti-reflection film with the same etchant. As a result, efficiency in the method of manufacturing the semiconductor device including an anti-reflection film can be improved.

Method of manufacturing semiconductor device

An attenuating type phase shifting mask and semiconductor device manufactured by using the mask according to the present invention includes an attenuating type phase shifting pattern, and an attenuating type auxiliary phase shifting pattern having a transmitting portion and a phase shifter portion formed at a predetermined position at the periphery of attenuating type phase shifting pattern, wherein attenuating type auxiliary phase shifting pattern includes a pattern having a resolution smaller than a limit of resolution of an exposure apparatus. Whereby, exposure of the region around a normal exposure region is prevented, and also exposure of the region adjacent to the exposure region is prevented when conducting exposure successively with a substrate moved.

Attenuating type phase shifting mask, method of manufacturing thereof

In a phase shift mask and a method for repairing a defect of a phase shift mask according to the present invention, a phase shifter defective portion in which a portion of a phase shifter portion is missing is formed in a region including a boundary between a light transmitting portion and a phase shifter portion, and phase shifter defective portion is supplemented with a repairing member having substantially the same transmittance as that of phase shifter portion and capable of converting a phase of exposure light by 180.degree.. Thus, a defect of the phase shifter portion generated on or in the vicinity of the boundary between the light transmitting portion and the phase shifter portion can be repaired without impairing a function as a phase shift mask.

Phase shift mask and method for repairing a defect of a phase shift mask

An attenuating type phase shifting mask according to the present invention includes an attenuating type phase shifting pattern, and an attenuating type auxiliary phase shifting pattern having a transmitting portion and a phase shifter portion formed at a predetermined position at the periphery of attenuating type phase shifting pattern, wherein attenuating type auxiliary phase shifting pattern includes a pattern having a resolution smaller than a limit of resolution of an exposure apparatus. Whereby, exposure of the region around a normal exposure region is prevented, and also exposure of the region adjacent to the exposure region is prevented when conducting exposure successively with a substrate moved.

Attenuating type phase shifting mask and method of manufacturing thereof

A mask pattern is transferred at a high resolution regardless of the configuration of a light shielding region. A plurality of light shielding members are disposed on a transparent substrate spaced from and parallel to each other. A main phase shifting film is formed in every other region between adjacent light shielding members on the transparent substrate in a direction along the arrangement of the light shielding members. At the periphery of the main phase shifting film, an auxiliary phase shifting film is disposed. Light through the main phase shifting film is 180 degrees out of phase from light through the transparent substrate while light through the auxiliary phase shifting film is 90 degrees out of phase from light through the transparent substrate. Due to the auxiliary phase shifting film, the intensity of transmitted light would not drop to zero at a border region between the main phase shifting film and the transparent substrate. Hence, the mask pattern is transferred at an enhanced transfer accuracy.

Method of manufacturing a photomask

In a photomask, phase shifting members can be arranged all over a transfer pattern regardless of the configuration of the transfer pattern without exception. The phase shifting members are each formed in a multi-layer structure in which a first and a second phase shifting members are stacked one atop the other. The phase shifting angles of the first and the second phase shifting members are each smaller than 180 degrees but equal to 180 degrees in total. In an edge region of the phase shifting member not adjacent to a light shielding member, the overlying second phase shifting member extends over an edge of the underlying first phase shifting member and onto a transparent substrate. The edge of the second phase shifting member is finished in a tapering configuration by thermal treatment. Where the first and the second phase shifting members are in a stack, according to the principles of the phase shift method, a high resolution is yielded. At the edge region of the phase shifting member wherein the first phase shifting member extends over the edge of the second phase shifting member, the intensity of light transmitted therethrough would not drop to zero.

Growing community of inventors

Hyogo, Japan

Junji Miyazaki