Tokyo Electron Limited

Junji Ishibashi

Taichi Hirano

Hidetoshi Hanaoka

Yoshinobu Hayakawa

Junichi Sasaki

Keiki Ito

Hikoichiro Sasaki

Satoshi Yamada

Fumitoshi Kumagai

Kota Shihommatsu

Ken Yoshida

Kunihiro Sato

An apparatus for plasma processing includes a chamber, a lower electrode on which a substrate is placed in the chamber, an edge ring disposed around the lower electrode, an upper electrode facing the lower electrode in the chamber, a member disposed around the upper electrode, a gas supply section configured to supply a process gas to a space between the member and the lower electrode, and a power supply for applying radio frequency power to the lower electrode or the upper electrode to generate a plasma of the process gas. The member includes an inner member and an outer member positioned outside the inner member, and the outer member is disposed outside the edge ring in a radial direction. At least part of the outer member is movable in a vertical direction.

Plasma processing apparatus, processing method, and upper electrode structure

A plasma processing apparatus can efficiently perform a pulse modulation method of switching a high frequency power to be used in a plasma process between a high level and a low level alternately according to a duty ratio of a modulation pulse. In this plasma processing apparatus, when performing a high/low pulse modulation on the high frequency power for plasma generation, if a weighted variable K is set to be 0.5&#x3c;K&#x3c;1, a constant reflection wave power PRis generated on a high frequency transmission line of a plasma generation system even during a pulse-on period T. Meanwhile, during a pulse-off period T, a reflection wave power PRdecreases. By adjusting the value of K, a balance between the reflection wave power PRduring the pulse-on period Tand the reflection wave power PRduring the pulse-off period Tcan be controlled.

Plasma processing apparatus

A power supply system includes a high frequency power supply which supplies a high frequency power; a DC power supply which supplies a first negative DC voltage or a second negative DC voltage having an absolute value larger than that of the first DC voltage; and a control unit which performs a power supply control process of repeating a supply and a stop of the supply of the high frequency power alternately; stopping supplies of the first and second DC voltages for a first period, which is a time period from a beginning of the supply of the high frequency power within a period during which the high frequency power is being supplied; supplying the first DC voltage for a second period except the first period within the period; and supplying the second DC voltage for a period during which the supply of the high frequency power is stopped.

Power supply system, plasma processing apparatus and power supply control method

Growing community of inventors

Miyagi, Japan

Junji Ishibashi