Mitsubishi Electric Corporation

Mitsubishi Denki Kabushiki Kaisha

Mitsubishi Electric Cooperation

Junji Fujino

Shohei Ogawa

Yuji Imoto

Mikio Ishihara

Yusuke Ishiyama

Soichi Sakamoto

Hiroshi Kawashima

Satoshi Kondo

Naoki Yoshimatsu

Yutaka Yoneda

Hiroshi Yoshida

Shinsuke Asada

Takamasa Iwai

Takumi Shigemoto

Hideyuki Tanaka

Satoru Ishikawa

Hidetoshi Ishibashi

Katsumi Miyawaki

Kenzo Mori

Isao Oshima

Akira Adachi

Nobuhiro Asaji

Taketoshi Maeda

Shinichi Takagi

Hiroyuki Harada

Masao Kikuchi

Yoshitaka Otsubo

Seiji Oka

Noboru Miyamoto

Tatsuya Kawase

Akira Kosugi

Osamu Hayashi

Taketoshi Shikano

Ken Sakamoto

Masayasu Ito

Masafumi Sugawara

Daisuke Murata

Yuichiro Suzuki

Kenta Nakahara

Hodaka Rokubuichi

Yoshiyuki Morihiro

Hiroaki Ichinohe

Akitoshi Shirao

Tadayoshi Hata

Masayoshi Shinkai

Yoshitaka Onishi

Goro Izuta

Jitsuho Hirota

Yoshihisa Uchida

Tatsunori Yanagimoto

Kazuyoshi Shige

Kohei Murakami

Mitsuhiro Nonogaki

Yoichi Hironaka

Miho Nagai

Junichi Murai

Yoshihiro Kashiba

Chika Matsui

Masao Uchigasaki

Kazuma Noda

Michio Ogawa

Jin Sato

A mold die includes a resin injection gate through which fluid resin serving as mold resin is injected toward a cavity, a resin reservoir to store the fluid resin flowing through the cavity, and a resin reservoir gate. The resin reservoir is provided on the side opposite to the side on which the resin injection gate is arranged with the cavity interposed. The resin reservoir gate communicatively connects the cavity and the resin reservoir. The opening cross-sectional area of the resin reservoir gate is smaller than the opening cross-sectional area of the resin injection gate.

Semiconductor manufacturing apparatus and method of manufacturing semiconductor device using the same, and semiconductor device

The present invention provides a semiconductor device including an insulating layer, a conductive layer bonded to one main surface of the insulating layer, a semiconductor element arranged such that the upper surface of the semiconductor element faces a direction same as the one main surface of the insulating layer, an upper electrode provided on the upper surface of the semiconductor element, a wiring member that has one end electrically bonded to the upper electrode of the semiconductor element and has another end electrically bonded to the conductive layer, and has a hollow portion, a first sealing material, and a second sealing material, in which the first sealing material seals at least part of the semiconductor element so as to be in contact with the semiconductor element, and the second sealing material seals the wiring member so as to be in contact with the wiring member.

Packaging of a semiconductor device with dual sealing materials

An object is to provide a technique capable of suppressing an occurrence of a non-filled portion. A semiconductor device includes a base plate, a case, and a semiconductor element. The semiconductor element is disposed in a space of the base plate and the case. The semiconductor device includes a lead electrode. The lead electrode is connected to an upper surface of the semiconductor element in the space. The semiconductor device includes a raised portion. The raised portion is disposed on an upper surface of the lead electrode in the space. The semiconductor device includes a sealing resin. The sealing resin seals the semiconductor element and the lead electrode in the space.

Semiconductor device and method of manufacturing the same

A semiconductor module includes a sub-mount having a front surface, a back surface, side surfaces connecting the front surface and the back surface, a semiconductor element soldered onto the front surface of the sub-mount, and a block soldered onto the back surface of the sub-mount. The semiconductor element protrudes outward beyond a first side surface of the sub-mount, a concave portion is formed on each of a second side surface and a third side surface of the sub-mount perpendicular to the first side surface, the concave portion extending from the front surface of the sub-mount toward the back surface of the sub-mount, and the concave portion is disposed to allow a projection of a collet to be held in the concave portion with the front surface of the sub-mount held by suction by the collet.

Semiconductor module and method of manufacturing same

A lead member includes a plurality of lead terminals, and the lead terminals extend from the inside to the outside of a mold resin. Each of the lead terminals has a base portion and a tip end portion on the outside of the mold resin. The base portion is disposed on a region side having a semiconductor element and extends in a direction protruding from the mold resin. The tip end portion extends in a direction different from the base portion and is disposed on the opposite side to a region having the semiconductor element as viewed from the base portion. The length by which the base portion extends differs between a pair of lead terminals adjacent to each other, among the lead terminals. At least a surface of the base portion of each of the lead terminals is covered with a coating resin.

Power semiconductor device and method of manufacturing the same, and power conversion device

A power module includes a plurality of conductive wire groups and a sealing member. The plurality of conductive wire groups each include a first bonded portion and a second bonded portion. A maximum gap between intermediate portions of a pair of conductive wire groups adjacent to each other is larger than a first gap between the first bonded portions of the pair of conductive wire groups adjacent to each other. The maximum gap between the intermediate portions of the pair of conductive wire groups adjacent to each other is larger than a second gap between the second bonded portions of the pair of conductive wire groups adjacent to each other. Therefore, the power module is improved in reliability.

Power module and method of manufacturing the same, and power conversion apparatus

A semiconductor device includes: a substrate; a semiconductor element arranged on the substrate; a plate-like member electrically connected to the semiconductor element; a first electrode formed on the semiconductor element and joined to the plate-like member with solder; a second electrode formed on the semiconductor element and spaced from the first electrode, and including a metal capable of forming an alloy with the solder; and a metal film formed on the semiconductor element and spaced from the second electrode in a region on the first electrode side as seen from the second electrode, in a two-dimensional view of the semiconductor element as seen from the plate-like member, and including a metal capable of forming an alloy with the solder.

Semiconductor device with metal film, power conversion device with the semiconductor device, and method of manufacturing the semiconductor device

A semiconductor package includes: an insulating substrate; a first semiconductor chip; a second semiconductor chip with a thickness smaller than a thickness of the first semiconductor chip; a heat radiation member in which a main surface located on an opposite side of an active surface of the first semiconductor chip and an active surface of the second semiconductor chip, respectively, are bonded to a lower surface; and a sealing resin having contact with at least part of a side wall of the heat radiation member without being raised over an upper surface of the heat radiation member to seal the first and second semiconductor chips on the insulating substrate, wherein in the heat radiation member, a thickness of a first bonding part to which the first semiconductor chip is bonded is smaller than a thickness of a second bonding part to which the second semiconductor chip is bonded.

Semiconductor package comprising a heat dissipation structure and an outer peripheral frame used as a resin flow barrier

A semiconductor module includes: an insulated circuit board; a semiconductor device mounted on the insulated circuit board; a printed wiring board arranged above the insulated circuit board and the semiconductor device and having a through-hole; a metal pile having a lower end bonded to an upper surface of the semiconductor device and a cylindrical portion penetrating through the through-hole and bonded to the printed wiring board; a case surrounding the insulated circuit board, the semiconductor device, the printed wiring board and the metal pile; and a sealing material sealing an inside of the case.

Semiconductor module

A semiconductor device includes an insulating substrate formed by integrating a ceramic base plate and a cooling fin; a multiple of plate interconnection members; and a plurality of semiconductor elements. The one faces of the semiconductor elements are bonded to the ceramic base plate of the insulating substrate with a chip-bottom solder, and the other faces thereof are bonded to the plate-interconnection members with a chip-top solder so that plate interconnection members correspond respectively to the semiconductor elements. The chip-bottom solder and the chip-top solder both contain mainly Sn and 0.3-3 wt. % Ag and 0.5-1 wt. % Cu. This allows the semiconductor device to be reduced in size without impairing heat dissipation.

Semiconductor device and method for producing semiconductor device

A base plate () includes a fixed surface and a radiating surface which is a surface opposite to the fixed surface. An insulating substrate () is bonded to the fixed surface of the base plate (). Conductive patterns () are provided on the insulating substrate (). Semiconductor chips () are bonded to the conductive pattern (). An Al wire () connects top surfaces of the semiconductor chip () to the conductive pattern (). The insulating substrate (), the conductive patterns (), the semiconductor chips (to) and the Al wires (to) are sealed with resin (). The base plate () includes a metal part () and a reinforcing member () provided in the metal part (). A Young's modulus of the reinforcing member () is higher than a Youngs modulus of the metal part ().

Semiconductor module, semiconductor device, and vehicle

In a method for manufacturing a semiconductor device, a plurality of first provisional fixing portions are supplied on a front surface of a substrate such that the plurality of first provisional fixing portions are spaced from each other and thus dispersed. A first solder layer processed into a plate to be a first soldering portion is disposed in contact with the plurality of first provisional fixing portions. A semiconductor chip is disposed on the first solder layer. In addition a conductive member in the form of a flat plate is disposed thereon via a second provisional fixing portion and a second solder layer. A reflow process is performed to solder the substrate, the semiconductor chip and the conductive member together.

Semiconductor device, method for manufacturing the same, and power conversion device

An object is to provide a power module in which adhesion of a sealing resin is sufficient and which is highly reliable. The power module includes: an insulative board in which a pattern of a conductor layer is formed on a ceramic plate; power semiconductor elements placed on the insulative board; lead frames each in a plate shape connecting from electrodes of the power semiconductor elements to screw-fastening terminal portions; and a sealing resin portion that seals connection portions between the power semiconductor elements and the lead frames, and regions around the connection portions; wherein, in the lead frames, opening portions are formed at positions where each of the lead frames at least partly overlaps, in planar view, with a portion of the insulative board on which the conductor layer is not formed.

Power module having a hole in a lead frame for improved adhesion with a sealing resin, electric power conversion device, and method for producing power module

A semiconductor device includes a semiconductor element having a front electrode, an electrode plate having an area larger than the front electrode of the semiconductor element in a two-dimensional view and made of aluminum or aluminum alloy, and a metal member having a joint surface joined to the front electrode of the semiconductor element with solder, having an area smaller than the front electrode of the semiconductor element in a two-dimensional view, made of a metal different from the electrode plate, and fastened to the electrode plate to electrically connect the front electrode of the semiconductor element to the electrode plate.

Semiconductor device

Growing community of inventors

Tokyo, Japan

Junji Fujino