Tokyo Electron Limited

Junichiro Matsunaga

Nobuhiro Takahashi

Koji Takeya

Masashi Matsumoto

Shuji Moriya

Kazuaki Nishimura

Tetsuro Takahashi

Yasuo Asada

Ayano Hagiwara

Kiyotaka Horikawa

A substrate processing method is provided. The method comprises a first step of supplying a processing gas containing a halogen-containing gas and a basic gas to a substrate, which a silicon film is formed on and has a first temperature, and generating a reaction product by deforming a surface of the silicon film; and a second step of removing the reaction product by setting the substrate to a second temperature after the first step.

Substrate processing method and substrate processing apparatus

A technique for making etching amounts uniform in selectively etching SiGe layers formed on a wafer with respect to at least one of an Si layer, an SiOlayer, and an SiN layer is provided. In an etching process where SiGe layers in a wafer W in which the SiGe layers and Si layers are alternately stacked and exposed in a recess are removed by side etching, ClFgas and HF gas are simultaneously supplied to the wafer W. Accordingly, it is possible to make the etching rates for respective SiGe layers uniform, and it becomes possible to obtain a uniform etching amount for respective SiGe layers.

Substrate processing method and storage medium

An etching method includes: disposing a target substrate which includes silicon and silicon-germanium in a chamber; supplying the chamber with processing gas which comprises Hgas and Ar gas in an excited state; and selectively etching the silicon with respect to the silicon-germanium by the processing gas which is in the excited state. Due to this configuration, silicon can be etched, with high selectivity, with respect to the silicon-germanium.

Etching method

An etching method includes loading a target substrate W into a chamber, the target substrate W having a silicon nitride film formed thereon and at least one of a polysilicon film and a silicon oxide film formed adjacent to the silicon nitride film; supplying a fluorine (F)-containing gas and an Ogas into the chamber, while at least the Ogas is excited; and selectively etching the silicon nitride film with respect to at least one of the polysilicon film and the silicon oxide film using the F-containing gas and the Ogas.

An etching method includes: disposing a target substrate including a silicon and a silicon-germanium within a chamber; and performing both of selectively etching the silicon-germanium with respect to the silicon and selectively etching the silicon with respect to the silicon-germanium by varying ratios of Fgas and NHgas in an etching gas that has a gas system including the Fgas and the NHgas.

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Nirasaki, Japan

Junichiro Matsunaga