Sii Nanotechnology Inc.

Sll Nano Technology Inc.

Aoi Electronics Co., Ltd.

Junichi Tashiro

Toshiaki Fujii

Makoto Sato

Yasuhiko Sugiyama

Kouji Iwasaki

Yutaka Ikku

Haruo Takahashi

Takashi Ogawa

Masahiro Kiyohara

Xin Man

Takashi Kaito

Kazuo Aita

Masanao Munekane

Keiichi Tanaka

Masatoshi Yasutake

Atsushi Uemoto

Yoshitomo Nakagawa

Yo Yamamoto

Anto Yasaka

Hiroki Hayashi

Masakatsu Hasuda

Takashi Konno

Mike Hassel-Shearer

Ikuko Nakatani

An electron microscope has a focused ion beam column positioned relative to an electron beam column so that the focused ion beam substantially perpendicularly intersects the electron beam. A backscattered electron detector is positioned relative to the focused ion beam column so that the direction normal to a detection plane of the backscattered electron detector is substantially perpendicular to the direction of the focused ion beam. The backscattered electron detector is configured and positioned to detect backscattered electrons released in a spread of at least about 70 degrees in width from the surface of the section by irradiation of the section with the electron beam

Electron microscope and specimen analyzing method

Small tweezers having a pair of arms openable and closable is moved closer to a sample and grips a particle attached on a surface of the sample and carries it onto an adhesion member to attach it thereto. The small tweezers are opened to release the particle and brought away from the adhesion member to leave the particle on the adhesion member. A particle removing device includes small tweezers having a pair of arms openable and closable; an opening/closing driving unit that drives the arm or arms to open/close the small tweezers; a stage mounting an adhesion member that attaches thereto a particle to withdraw the particle; and a moving mechanism that moves the small tweezers between the sample and the adhesion member mounted on the stage. Also, an atomic force microscope and a charged ion beam apparatus that include the particle removing device are disclosed.

Particle removing method, particle removing device, atomic force microscope, and charged particle beam apparatus

A focused ion beam system includes a sample holder having a fixing plane for fixing a sample, a sample base on which the sample holder is provided, a focused ion beam irradiating mechanism that irradiates a focused ion beam to the sample, microtweezers that hold the sample and have the axial direction at a predetermined angle to a surface of the sample base, an opening/closing mechanism that opens and closes the microtweezers, a rotating mechanism that rotates the microtweezers about the axial direction, and a moving mechanism that moves the position of the microtweezers.

Focused ion beam system and sample processing method using the same

A cross-section processing and observation method includes: forming a first cross section in a sample by etching processing using a focused ion beam; obtaining image information of the first cross section by irradiating the focused ion beam to the first cross section; forming a second cross section by performing etching processing on the first cross section; obtaining image information of the second cross section by irradiating the focused ion beam to an irradiation region including the second cross section; displaying image information of a part of a display region of the irradiation region from the image information of the second cross section; displaying the image information of the first cross section by superimposing it on the image information being displayed; and moving the display region within the irradiation region. Observation images in which display regions are aligned can be obtained while reducing damage to the sample.

Method and apparatus for cross-section processing and observation

A focused ion beam apparatus includes: a focused ion beam irradiating mechanism configured to irradiate a sample with a focused ion beam; a detector configured to detect a secondary charged particle generated by irradiating the sample with the focused beam; an image generating unit configured to generate an sample image of the sample; a processing area setting unit configured to set a processing area image including a plurality of pixels corresponding to positions of irradiation of the focused ion beam on the sample image; a position of irradiation setting unit configured to set coordinates of the pixels included in the processing area image; a beam setting unit configured to set a dose amount of the focused ion beam irradiated from the focused ion beam irradiating mechanism according to intensities; and an interpolating unit configured to perform an interpolating process on the processing area image.

Focused ion beam apparatus, sample processing method using the same, and computer program for focused ion beam processing

A section processing apparatus has a mark forming control portion that transmits control information for forming marks on a surface of a sample. Each of the marks has at least two portions intersecting at a converging portion located at a previously determined position of an observation target section of the sample or in the vicinity of the previously determined position. A first focused ion beam apparatus emits a first focused beam for forming each of the marks on the surface of the sample based on the control information transmitted by the mark forming control portion and for processing a section of the sample. The section of the sample is processed by scanning the first focused beam in parallel with the at least two portions of the marks in the direction of the converging portion, while the section of the sample and positions of the marks are observed by a second focused ion beam apparatus, and to finish processing of the section of the sample when the first focused beam reaches the converging portion or a vicinity thereof.

Section processing method and its apparatus

A composite focused ion beam device has a first ion beam irradiation system that irradiates a first ion beam for processing a sample and a second ion beam irradiation system that irradiates a second ion beam for processing or observing the sample. The first ion beam irradiation system has a plasma type gas ion source that generates first ions for forming the first ion beam, each of the first ions having a first mass. The second ion beam irradiation system has a gas field ion source that generates second ions for forming the second ion beam. Each of the second ions has a second mass smaller than that of the first mass.

Composite focused ion beam device, process observation method using the same, and processing method

There is provided a sample processing and observing method including irradiating a focused ion beam to a sample to form an observed surface, irradiating an electron beam to the observed surface to form an observed image, removing the surface opposite to the observed surface of the sample, forming a lamella including the observed surface and obtaining a transmission observed image for the lamella.

Sample processing and observing method

A composite focused ion beam device has a sample stage for supporting a sample, a first ion beam irradiation system that irradiates a first ion beam for processing the sample, and a second ion beam irradiation system that irradiates a second ion beam for processing or observing the sample. The first ion beam irradiation system has a liquid metal ion source that generates first ions for forming the first ion beam. The second ion beam irradiation system has a gas field ion source that generates second ions for forming the second ion beam. The first ion beam irradiated by the first ion beam irradiation system has a first beam diameter and the second ion beam irradiated by the second ion beam irradiation system has a second beam diameter smaller than the first beam diameter. The first and second ion beam irradiation systems are disposed relative to the sample stage so that axes of the first and second ion beams are orthogonal to a tilt axis of the sample stage.

Composite focused ion beam device, and processing observation method and processing method using the same

A sample preparing device has a sample stage that supports a sample and undergoes rotation about a first rotation axis to bring a preselected direction of the sample piece into coincidence with an intersection line between a first plane formed by a surface of the sample piece and a second plane. A manipulator holds sample piece of the sample and undergoes rotation about a second rotation axis independently of the sample stage to rotate the sample piece to a preselected position in the state in which the preselected direction of the sample piece coincides with the intersection line. The manipulator is disposed relative to the sample stage so that an angle between the second rotation axis and the surface of the sample is in the range of 0&#xb0; to 45&#xb0;. The second plane corresponds to a plane obtained by rotating around the second rotation axis a line segment which is vertical to the surface of the sample and of which one end corresponds to an intersection between the surface of the sample and the second rotation axis.

Sample preparing device and sample posture shifting method

A substrate comprises a substrate main body having a surface on which a measurement object article is to be formed. A reference scale is disposed on the surface of the substrate main body in the vicinity of a region of the surface where the measurement object article is to be formed. The reference scale has adjacent graduations spaced-apart a preselected distance from one another.

Method of measuring length of measurement object article in micro-structure

In a chamber of a charged particle beam apparatus, the sample on the sample substrate is gripped and carried to the sample holder, and there is controlled the attitude of the sample when the sample is fixed on the sample holder. There possesses a marking process applying, in the chamber, a marking to a surface of the sample Wb existing on the sample substrate by a beam, a carriage process gripping the sample by a sample gripping means and carrying it from the sample substrate to the sample holder, and an attitude control process controlling, when fixing the sample to the sample holder, the attitude of the sample while observing the marking applied to the surface of the sample.

Sample relocation method in charged particle beam apparatus and charged particle beam apparatus as well as sample for transmission electron microscope

The apparatus for working and observing samples comprises a sample plate on which a sample is to be placed; a first ion beam lens barrel capable of irradiating a first ion beam over a whole predetermined irradiation range at one time; a mask that can be arranged between the sample plate and the first ion beam lens barrel, and shields part of the first ion beam; mask-moving means capable of moving the mask; a charged particle beam lens barrel capable of scanning a focused beam of charged particles in the range irradiated with the first ion beam; and detection means capable of detecting a secondarily generated substance.

Apparatus for working and observing samples and method of working and observing cross sections

Techniques for specifying an observing or working position of a sample are provided. Digitized data of a sample is obtained and stored in a 1st storage device. A 1st display area displays an image of a portion containing a desired observing or working position of the digitized data stored in the 1st storage device. A 1st position that is indicated by a pointing device on the 1st display area is stored in a 2nd storage device. The sample is moved to an observing or working position for observation, and an observation image of the sample is stored in the 3rd storage device. A 2nd display area displays the observation image of the sample stored in the 3rd storage device. A position indicated on the 2nd display area and corresponding to the 1st position stored in the 2nd storage device is stored in a 4th storage device. A conversion function for converting a coordinate system of the 1st display area and the 2nd display area is calculated using the 1st position stored in the 2nd storage means and the position stored in the 4th storage device. A position indicated in one of the 1st and 2nd display areas and corresponding to another position indicated in the other of the 1st and 2nd display areas is calculated in accordance with the calculated conversion function.

Method and apparatus for specifying working position on a sample and method of working the sample

Detected is a secondary electron generated by irradiating a focused ion beam while performing etching a sample section and the around through scan-irradiating the focused ion beam. From a changing amount of the detected secondary electron signal an end-point detecting mechanism detects an end point to thereby terminate the etching, so that a center position of a defect or a contact hole is effectively detected even with an FIB apparatus not having a SEM observation function.

Growing community of inventors

Chiba, Japan

Junichi Tashiro