Hoya Corporation

Wd Media (singapore) Pte. Ltd.

Junichi Horikawa

Tsutomu Shoki

Kazuhiro Hamamoto

Toshihiko Orihara

Hirofumi Kozakai

Youichi Usui

Osamu Nozawa

Masato Kobayashi

Teiichiro Umezawa

Hisao Kawai

Kenji Ayama

Keiji Moroishi

Xuelu Zou

Takashi Sato

Mikio Ikenishi

Takahiro Onoue

Masafumi Ishiyama

Tokichiro Sato

Kong Kim

Kenji Yamanaka

Kinobu Osakabe

Yohei Ikebe

Hiroshi Tomiyasu

Tomotaka Yokoyama

Iwao Okamoto

Daisuke Masuda

Chiyo Saito

Mizuki Kataoka

Provided are a reflective mask blank and a reflective mask, which are able to reduce the shadowing effects of EUV lithography and form a fine pattern. As a result, a semiconductor device can be stably manufactured with high transfer accuracy. The reflective mask blank comprises a multilayer reflective film and an absorber film in that order on a substrate, and the absorber film comprises a material comprising an amorphous metal comprising at least one or more elements among cobalt (Co) and nickel (Ni).

Reflective mask blank, reflective mask and manufacturing method thereof, and semiconductor device manufacturing method

Disclosed is a mask blank substrate for use in lithography, wherein a main surface of the substrate satisfies a relational equation of (BA&#x2212;BA)/(BD&#x2212;BD)&#x2265;350(%/nm), and has a maximum height (Rmax)&#x2264;1.2 nm in a relation between a bearing area (%) and a bearing depth (nm) obtained by measuring, with an atomic force microscope, an area of 1 &#x3bc;m&#xd7;1 &#x3bc;m in the main surface on the side of the substrate where a transfer pattern is formed, wherein BAis defined as a bearing area of 30%, BAis defined as a bearing area of 70%, and BDand BDare defined to respectively represent bearing depths for the bearing area of 30% and the bearing area of 70%.

Mask blank substrate, substrate with multilayer reflection film, transmissive mask blank, reflective mask blank, transmissive mask, reflective mask, and semiconductor device fabrication method

Disclosed is a mask blank substrate for use in lithography, wherein a main surface of the substrate satisfies a relational equation of (BA&#x2212;BA)/(BD&#x2212;BD)&#x2265;350 (%/nm), and has a maximum height (Rmax)&#x2264;1.2 nm in a relation between a bearing area (%) and a bearing depth (nm) obtained by measuring, with an atomic force microscope, an area of 1 &#x3bc;m&#xd7;1 &#x3bc;m in the main surface on the side of the substrate where a transfer pattern is formed, wherein BAis defined as a bearing area of 30%, BAis defined as a bearing area of 70%, and BDand BDare defined to respectively represent bearing depths for the bearing area of 30% and the bearing area of 70%.

Disclosed is a mask blank substrate for use in lithography, wherein the main surface on which the transfer pattern of the substrate is formed has a root mean square roughness (Rms) of not more than 0.15 nm obtained by measuring an area of 1 &#x3bc;m&#xd7;1 &#x3bc;m with an atomic force microscope, and has a power spectrum density of not more than 10 nmat a spatial frequency of not less than 1 &#x3bc;m.

Mask blank substrate, substrate with multilayer reflection film, transmissive mask blank, reflective mask, and semiconductor device fabrication method

An object of the present invention is to provide a mask blank substrate and the like that enables critical defects to be reliably detected as a result of reducing the number of detected defects, including pseudo defects, even when using highly sensitive defect inspection apparatuses that use light of various wavelengths. The present invention relates to a mask blank substrate that is used in lithography, wherein the power spectral density at a spatial frequency of 1&#xd7;10&#x3bc;mto 1 &#x3bc;m, obtained by measuring a 0.14 mm&#xd7;0.1 mm region on a main surface of the mask blank substrate on the side of which a transfer pattern is formed at 640&#xd7;480 pixels with a white-light interferometer, is not more than 4&#xd7;10nm, and the power spectral density at a spatial frequency of not less than 1 &#x3bc;m, obtained by measuring a 1 &#x3bc;m&#xd7;1 &#x3bc;m region on the main surface with an atomic force microscope, is not more than 10 nm.

Mask blank substrate, substrate with multilayer reflective film, reflective mask blank, reflective mask, method of manufacturing mask blank substrate, method of manufacturing substrate with reflective film and method of manufacturing semiconductor device

Disclosed is a mask blank substrate for use in lithography, wherein a main surface of the substrate satisfies a relational equation of (BA&#x2212;BA)/(BD&#x2212;BD)&#x2267;350 (%/nm), and has a maximum height (Rmax)&#x2266;1.2 nm in a relation between a bearing area (%) and a bearing depth (nm) obtained by measuring, with an atomic force microscope, an area of 1 &#x3bc;m&#xd7;1 &#x3bc;m in the main surface on the side of the substrate where a transfer pattern is formed, wherein BAis defined as a bearing area of 30%, BAis defined as a bearing area of 70%, and BDand BDare defined to respectively represent bearing depths for the bearing area of 30% and the bearing area of 70%.

An object of the present invention is to provide a substrate with a multilayer reflective film that enables the number of detected pseudo defects, to be reduced even when using highly sensitive defect inspection apparatuses using light of various wavelengths, and in particular, is capable of achieving a level of smoothness required of substrates with a multilayer reflective film while reliably detecting critical defects as a result of reducing the number of detected pseudo defects, as well as a method of manufacturing the same. The present invention relates to a method of manufacturing a substrate with a multilayer reflective film having a multilayer reflective film, obtained by alternately laminating a high refractive index layer and a low refractive index layer, on the main surface of a mask blank substrate on the side of which a transfer pattern is formed, comprising a step of: depositing the multilayer reflective film on the main surface by ion beam sputtering using targets composed of a high refractive index material and a low refractive index material; wherein, during the ion beam sputtering, sputtered particles of the high refractive index material and the low refractive index material are made to enter at prescribed incident angle relative to the normal of the main surface so that the power spectral density in a prescribed spatial frequency region is a prescribed value.

Method of manufacturing substrate with a multilayer reflective film, method of manufacturing a reflective mask blank, substrate with a multilayer reflective film, reflective mask blank, reflective mask and method of manufacturing a semiconductor device

An object of the present invention is to provide a method of manufacturing a perpendicular magnetic recording medium () in which both of a coercive force Hc and reliability can be achieved at a higher level even with heating at the time of forming a medium protective layer () and to provide the perpendicular magnetic recording medium (). Thus, in a typical structure of the present invention, in the method of manufacturing the perpendicular magnetic recording medium () including at least a magnetic recording layer (), which is a ferromagnetic layer of a granular structure in which a non-magnetic grain boundary part is formed between crystal grains each grown in a columnar shape, and a medium protective layer () with carbon hydride as a main component in this order on a disk base (), the method includes a magnetic recording layer forming step of forming the magnetic recording layer () so that the grain boundary part contains oxides of a plurality of types and a medium protective layer forming step of forming the medium protective layer () in a state where the disk base () having the magnetic recording layer () formed thereon is heated at 160 to 200 degrees Celsius.

Method of manufacturing perpendicular magnetic recording medium and perpendicular magnetic recording medium

[Problem] A perpendicular magnetic recording medium and a magnetic disk device that are suitable for a shingle recording type are provided. [Solution] The perpendicular magnetic recording medium of the present invention is a perpendicular magnetic recording medium for a shingle recording type having a laminated film including a soft magnetic layerand a main recording layerformed on base, the soft magnetic layerhaving a thickness found from a core width of a magnetic head for recording and reproduction with respect to the perpendicular magnetic recording medium and a track pitch narrower than the core width.

Perpendicular magnetic recording media and magnetic disc apparatus

The present invention provides a perpendicular magnetic recording medium that can reduce noise by further size reduction and isolation of magnetic grains in a magnetic recording layer and can increase the recording density by improvement of the SNR. A typical configuration of a perpendicular magnetic recording medium according to the present invention is a perpendicular magnetic recording medium having a magnetic recording layer with a granular structure in which non-magnetic grain boundary portions are formed between magnetic grains that have grown continuously in a columnar shape, wherein the grain boundary portions contain a plurality of kinds of oxides.

Perpendicular magnetic recording medium

In a perpendicular magnetic recording medium which includes a substrate () of a nonmagnetic material, first and second nonmagnetic underlayers (and) formed on the substrate, and a perpendicular magnetic recording layer () formed on the first and the second nonmagnetic underlayers, the first nonmagnetic underlayer is made of an amorphous nonmagnetic metal material containing a metal element which forms a face-centered cubic (fcc) crystal structure by a simple substance. The second nonmagnetic underlayer is formed on the first nonmagnetic underlayer in contact with the first nonmagnetic underlayer and made of a nonmagnetic material containing a hexagonal close packed structure. The perpendicular magnetic recording layer is formed on the second nonmagnetic underlayer in contact with the second nonmagnetic layer.

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Tokyo, Japan

Junichi Horikawa