Samsung Electronics Co., Ltd.

Jungil Ahn

Myeongjin Kim

Youngsoo Park

Seung Han Lee

Sukjin Chung

In-Sun Yi

Geunkyu Choi

JongCheol Lee

Jin Pil Heo

MinHwa Jung

Jaechul Shin

Sangyeob Cha

WanGoo Hwang

Youngsam An

A substrate processing system may include a process chamber in which a process on a substrate is performed, a supporting unit in the process chamber to support the substrate, a gas supply unit including a gas supply part with gas supply holes, with the gas supply holes being configured to supply a process gas onto the substrate, and an exhaust unit configured to exhaust the process gas from the process chamber. The gas supply part may include a gas supply region provided with the gas supply holes and a gas diffusion region between the gas supply region and the exhaust unit. The gas diffusion region may be free of the gas supply holes.

Gas supply unit and substrate processing system

An apparatus to form semiconductor devices includes an inner tube and an outer tube disposed to surround the inner tube. A plate is disposed at first open end of the inner tube to reduce variation between pressures at a first portion and a second portion inside the inner tube. The sum of areas of through-holes disposed on the plate is 10 to 60 percent of the entire area of the plate. The through-holes may include a first through-hole that is disposed at a central portion of the plate, and second through-holes disposed at an edge portion of the plate. The second through-holes are annularly arranged to surround the first through-hole.

Apparatus and method of forming semiconductor devices

Growing community of inventors

Suwon-si, South Korea

Jungil Ahn