Samsung Electronics Co., Ltd.

Jungho Yoo

Bonyoung Koo

Byeongchan Lee

Dongsuk Shin

Keum Seok Park

Jinyeong Joe

Hongsik Yoon

Jinbum Kim

Hyun Jung Lee

Choeun Lee

Seong Hoon Jeong

A semiconductor device includes an active pattern protruding from a substrate, a gate structure crossing over the active pattern, and source/drain regions disposed on the active pattern at opposite sides of the gate structure. Each of the source/drain regions includes a first epitaxial pattern contacting the active pattern and a second epitaxial pattern on the first epitaxial pattern. The first epitaxial pattern comprises a material having a lattice constant which is the same as that of the substrate, and the second epitaxial pattern comprises a material having a lattice constant greater than that of the first epitaxial pattern.

Semiconductor devices including source/drain regions having multiple epitaxial patterns

A method of manufacturing a semiconductor device includes forming an active pattern protruding from a semiconductor substrate, forming a dummy gate pattern crossing over the active pattern, forming gate spacers on opposite first and second sidewalls of the dummy gate pattern, removing the dummy gate pattern to form a gate region exposing an upper surface and sidewalls of the active pattern between the gate spacers, recessing the upper surface of the active pattern exposed by the gate region to form a channel recess region, forming a channel pattern in the channel recess region by a selective epitaxial growth (SEG) process, and sequentially forming a gate dielectric layer and a gate electrode covering an upper surface and sidewalls of the channel pattern in the gate region. The channel pattern has a lattice constant different from that of the semiconductor substrate.

Semiconductor device and method of manufacturing the same

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Seongnam-si, South Korea

Jungho Yoo