Rohm and Haas Electronic Materials Korea Ltd.

Rohm & Haas Electronic Materials LLC

Dow Global Technolgoies LLC

Jung Kyu Jo

Jae Hwan Sim

Jae-Bong Lim

Jin Hong Park

Hye-Won Lee

Cheng-Bai Xu

Phillip Dene Hustad

Mingqi Li

Jong Keun Park

Jihoon Kang

Eui-Hyun Ryu

Eui Hyun Ryu

Jun-Han Yun

EunHye Cho

So-Yeon Kim

Eunhye Cho

Bon-ki Ku

An anti-reflective coating composition is provided. The anti-reflective coating composition of the present invention can be useful in preventing a pull-back phenomenon in which an anti-reflective coating layer tears on a corner of a pattern of a substrate during a heat curing process and improving gap-filling performance of the pattern since a crosslinker is attached to a polymer in the composition and the content of the low-molecular-weight crosslinker in the composition is minimized to regulate a heat curing initiation temperature.

Organic bottom antireflective coating composition for nanolithography

Organic coating compositions, particularly antireflective coating compositions for use with an overcoated photoresist, are provided that comprise that a blend of two or more resins, where one resin has epoxy groups either pendant or fused to the polymer backbone. Preferred coating compositions include: 1) a first resin that comprises one or more epoxy reactive groups; and 2) a crosslinker resin that is distinct from the first resin and comprises epoxy groups.

Coating compositions for use with an overcoated photoresist

Underlayer coating compositions are provided that comprise 1) a resin; and a solvent component comprising one or more solvents having a boiling of 200&#xb0; C. or greater. Coating compositions are particularly useful with overcoated photoresist compositions imaged with EUV.

Underlayer coating compositions for use with photoresists

In a preferred aspect, organic coating compositions, particularly antireflective coating compositions for use with an overcoated photoresist, are provided that comprise 1) one or more glycidyl groups; and 2) one or more aromatic groups that each comprises two or more substituents that comprise hydroxy, thiol and/or amine moieties. Catechol-containing polymers and methods for producing same also are provided.

Gap-fill methods comprise: (a) providing a semiconductor substrate having a relief image on a surface of the substrate, the relief image comprising a plurality of gaps to be filled; (b) applying a gap-fill composition over the relief image, wherein the gap-fill composition comprises a non-crosslinked crosslinkable polymer, an acid catalyst, a crosslinker and a solvent, wherein the crosslinkable polymer comprises a first unit of the following general formula (I): wherein: Ris chosen from hydrogen, fluorine, C-Calkyl and C-Cfluoroalkyl; and Aris an optionally substituted aryl group that is free of crosslinkable groups; and a second unit of the following general formula (II): wherein: Ris chosen from hydrogen, fluorine, C-Calkyl and C-Cfluoroalkyl; and Ris chosen from optionally substituted Cto Clinear, branched or cyclic alkyl, and optionally substituted Cto Caryl, optionally containing heteroatoms, wherein at least one hydrogen atom is substituted with a functional group independently chosen from hydroxyl, carboxyl, thiol, amine, epoxy, alkoxy, amide and vinyl groups; and (c) heating the gap-fill composition at a temperature to cause the polymer to crosslink. The methods find particular applicability in the manufacture of semiconductor devices for the filling of high aspect ratio gaps.

Gap-fill methods

Provided are gap-fill methods. The methods comprise: (a) providing a semiconductor substrate having a relief image on a surface of the substrate, the relief image comprising a plurality of gaps to be filled, wherein the gaps have a width of 50 nm or less; (b) applying a gap-fill composition over the relief image, wherein the gap-fill composition comprises a first polymer comprising a crosslinkable group, a second polymer comprising a chromophore, wherein the first polymer and the second polymer are different, a crosslinker, an acid catalyst and a solvent, wherein the gap-fill composition is disposed in the gaps; (c) heating the gap-fill composition at a temperature to cause the first polymer to self-crosslink and/or to crosslink with the second polymer to form a crosslinked polymer; (d) forming a photoresist layer over the substrate comprising the crosslinked polymer-filled gaps; (e) patternwise exposing the photoresist layer to activating radiation; and (f) developing the photoresist layer to form a photoresist pattern. The methods find particular applicability in the manufacture of semiconductor devices for the filling of high aspect ratio gaps with an antireflective coating material.

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Gyeonggi-do, South Korea

Jung Kyu Jo