Korea Kumho Petrochemical Co., Ltd.

Jung Hoon Oh

Seung Duk Cho

Dae Kyung Yoon

Dong Chul Seo

Jin Ho Kim

Dae Hyeon Shin

Jin Bong Shin

Tae Gon Kim

Sang Jin Kim

Yong Hwa Hong

So Jeong Park

A photoacid generator represented by the following formula (1), a method for producing the photoacid generator, and a resist composition containing the photoacid generator are provided. wherein in the formula (1), Y, X, R, R, n, nand Ahave the same meanings as defined in the detailed description of the invention. The photoacid generator can maintain an appropriate contact angle at the time of ArF liquid immersion lithography, can reduce defects occurring during liquid immersion lithography, and has excellent solubility in resist solvents and excellent compatibility with resins. Furthermore, the photoacid generator can be produced by an efficient and simple method using an epoxy compound that is industrially easily available.

Photoacid generator, method for producing the same, and resist composition comprising the same

A sulfonium compound represented by the following formula (1), a photoacid generator containing the sulfonium compound, and a resist composition containing the photoacid generator are provided: wherein X represents an electron donor group; Rand Reach independently represent an alkyl group or the like; Rto Reach independently represent an alkyl group, or the like; Rrepresents a cyclic alkenediyl group or the like; and &#x2212;A represents an anion. The sulfonium compound has a photon yield that is controllable by introducing different absorbers to the cation region in one molecule, can address the inconvenience of using a mixture of different photoacid generators when the sulfonium compound is applied as a photoacid generator, has excellent miscibility in a resist, and has enhanced resolution and line edge roughness.

Sulfonium compound, photoacid generator, and resist composition

A photoacid generator represented by the following formula (1), a method for producing the photoacid generator, and a resist composition containing the photoacid generator are provided. wherein in the formula (1), Y, Y, X, R, R, n, nand Ahave the same meanings as defined in the detailed description of the invention. The photoacid generator can maintain an appropriate contact angle at the time of ArF liquid immersion lithography, can reduce defects occurring during liquid immersion lithography, and has excellent solubility in resist solvents and excellent compatibility with resins. Furthermore, the photoacid generator can be produced by an efficient and simple method using an epoxy compound that is industrially easily available.

Disclosed are a photoacid generator, a copolymer, a chemically amplified resist composition, and a method of forming a pattern using the chemically amplified resist composition. The photoacid is connected with a main chain of the copolymer, whereby the photoacid is equally dispersed within a resist layer, and characteristics of line edge roughness of a resist pattern is improved.

Photoacid generator, copolymer, chemically amplified resist composition, and method of forming pattern using the chemically amplified resist composition

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Chungcheongnam-do, South Korea

Jung Hoon Oh