Charm Engineering Co., Ltd.

Jung Hee Lee

Kwan Goo Rha

Kyung Ho Lee

Young Ki Han

Dong Wan Kim

Jae Chul Choi

Yong Hwan Lim

Jae Ho Guahk

Chul Hee Jang

Hee Se Lee

Seng Hyun Chung

Won Haeng Lee

Hyang Joo Lee

Sun Q Jeon

Provided are a substrate supporting apparatus and a plasma etching apparatus having the same. There is provided a substrate supporting apparatus that can separately provide powers to a central region and an edge region by disposing an electrode supporting a substrate at the central region of the substrate supporting apparatus, and disposing an electrode receiving radio frequency (RF) power at the edge region of the substrate supporting apparatus. There is provided a substrate edge etching apparatus having the substrate supporting apparatus for removing layers or particles deposited in an edge region of a semiconductor substrate and preventing damage of a center region of the semiconductor substrate during an etching process of the substrate edge.

Apparatus for supporting substrate and plasma etching apparatus having the same

There is provided a substrate supporter capable of securely supporting a substrate such as a wafer on which a device having a predetermined thin film pattern is formed to remove various impurities formed on the rear surface of the substrate, and a plasma processing apparatus having the same. The plasma processing apparatus includes: at least one arm; and a supporting portion extending from the arm toward a substrate seating position of the substrate, so that the plasma processing apparatus can reduce the likelihood of arc discharges compared with conventional dry etching to increase process yield and product reliability, and ensure stable mounting of a substrate.

Apparatus for plasma processing and method for plasma processing

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Incheon, South Korea

Jung Hee Lee