Apple Inc.

Jung-Cheng Yeh

Jun Zhai

Kunzhong Hu

Sanjay Dabral

Thomas Hoffmann

Raymundo M Camenforte

Shingo Suzuki

Toshinari Takayanagi

Conrad Havluj Ziesler

Sribalan Santhanam

Honkai Tam

Sanjay P Zambare

Multi-die structures and methods of fabrication are described. In an embodiment, a multi-die structure includes a first die, a second die, and die-to-die routing connecting the first die to the second die. The die-to-die interconnection may be monolithically integrated as a chip-level die-to-die routing, or external package-level die-to-die routing.

Selectable monolithic or external scalable die-to-die interconnection system methodology

In an embodiment, an integrated circuit includes a power gated block and a power manager circuit. The power manager circuit is configured to provide a block enable signal and at least one select signal to the power gated block. The power manager may generate the select signal responsive to various parameters that affect the speed of the integrated circuit, such as power supply voltage magnitude, operating temperature, and/or process corner. The power gated block may control the rate at which power switches are enabled based on the select signal or signals. For example, the power switches may be enabled in a more parallel or more serial fashion and/or the drive strength of block enable buffering to the power switches may be varied. In another embodiment, the power manager circuit may assert multiple block enables to the power gated block (which are connected to separate sets of power switches), and may control the timing of assertion of the enables to control the rate at which power switches are enabled.

Power switch ramp rate control using programmable connection to switches

A memory circuit may include a pair of cross-coupled inverters configured to store a bit of data and a first transistor coupled to a first node of the pair of cross-coupled inverters. A plurality of transistors that form the pair of inverters have a first nominal threshold voltage. The first transistor is coupled to a first bit line, and has a second nominal threshold voltage that is lower than the first nominal threshold voltage. The first transistor may be a write transistor and another write transistor having the second nominal threshold voltage is coupled to the other node of the pair of cross-coupled inverters. A register file may include a bit storage section that includes at least one pair of the cross-coupled inverters; a write transistor section and a read transistor section having the second nominal threshold voltage.

Multiple threshold voltage register file cell

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San Jose, CA, United States of America

Jung-Cheng Yeh