Tokyo Electron Limited

Jun Yashiro

Satoru Kawakami

Shuji Moriya

Masahiro Ogasawara

Yoshifumi Tahara

Susumu Tanaka

Sungtae Lee

Yusuke Nakagawa

Ryou Mochizuki

A deposit removing method that can reliably remove deposit produced in plasma processing using plasma produced from a process gas containing methane gas and oxygen gas. In a chamber in which an electrode to which radio frequency electrical power is supplied is disposed, plasma processing is carried out on a substrate using the plasma produced from the process gas containing methane gas and oxygen gas, and then a cleaning step is carried out in which plasma is produced from a mixed gas containing fluorinated compound gas containing hydrogen in the chamber.

Deposit removing method and substrate processing method

Disclosed is a method of etching a substrate having a layered structure in which a photoresist mask with a pattern, a coating film made of silicon oxide, and an organic film are laminated in that order from the top. Before etching the coating film of silicon oxide, a deposit is deposited on the photoresist mask by using plasma generated from a hydrocarbon gas such as CHgas so as to narrow the size of openings in the pattern of the photoresist mask. The pattern of the photoresist mask is well transferred to the organic film through the coating film, and a pattern with openings having a high aspect ratio can be formed in the organic film and toppling of the pattern in the organic film can be prevented. The organic film with the transferred pattern is used as an etch mask for etching the underlying layer.

Etching method, plasma processing system and storage medium

A plasma process system for producing gas plasma in an air-tight chamber by high frequency power to process a substrate with the gas plasma comprising a lower electrode on which the substrate to be plasma-processed is mounted, an upper electrode arranged above the lower electrode, a plasma generator circuit for generating plasma between the upper and the lower electrode, a power source for supplying high frequency power to the plasma generator circuit, and bias generator for generating negative voltage in the upper or lower electrode when high frequency power is supplied from the power source to the upper or lower electrode, wherein the plasma generator circuit includes transformer for supplying a part of high frequency power, which is supplied from the power source, to the bias generator.

Plasma process system and method

Growing community of inventors

Nirasaki, Japan

Jun Yashiro