Kabushiki Kaisha Toshiba

Toshiba Memory Corporation

Other

Jun Takayasu

Takashi Watanabe

Naoto Miyashita

Dai Fukushima

Yoshihiro Minami

Hiroshi Kato

Mariko Shimomura

Jun Takagi

Takayuki Nakayama

Kazuhiko Hayashi

Kenji Doi

Masayoshi Adachi

Hiroyuki Kohno

Satoshi Murakami

Mikiko Kawaguchi

According to one embodiment, there is provided a cleaning apparatus including a substrate cleaner and a member cleaner. The substrate cleaner has a substrate cleaning member placed over a first region to be opposite a substrate and a second region different from the first region. The member cleaner is placed adjacent to the second region.

Cleaning apparatus and cleaning method

According to one embodiment, a polishing device includes a stage holding a wafer, a polishing part polishing a film formed on a circumferential edge portion of the wafer, a detector detecting a residual portion of the film on the circumferential edge portion, a first movable part moving the detector along a surface of the circumferential edge portion; and a controller controlling the polishing part based on a state of the circumferential edge portion detected by the detector.

Polishing device and polishing method

In one embodiment, a semiconductor manufacturing apparatus includes a wafer retaining module configured to retain a wafer by a chuck pin and to rotate the wafer. The apparatus further includes a wafer cleaning module configured to retain a cleaning member for cleaning a surface of the wafer and to rotate the cleaning member around a first rotation axis that is perpendicular to the surface of the wafer, the wafer cleaning module cleaning the surface of the wafer by moving the cleaning member on the surface of the wafer while the cleaning member contacts the wafer and rotates. The wafer cleaning module retains and rotates the cleaning member so that the first rotation axis does not pass through a contact region of the cleaning member with respect to the wafer.

Semiconductor manufacturing apparatus and method of manufacturing  semiconductor device

A polishing apparatus includes a polisher, a holder, and a supplier. The polisher polishes a semiconductor substrate or a polishing target film on a semiconductor substrate. The holder holds the semiconductor substrate and presses the semiconductor substrate or the polishing target film against the polisher to rub the semiconductor substrate or the polishing target film against the polisher. The supplier has a nozzle that is to be inserted to the inside of the polisher and that supplies a polishing solution to the inside of the polisher.

Polishing apparatus, polishing method, and semiconductor manufacturing method

A retainer ring configured to be attachable, at a first side thereof, to a polish head of a polish apparatus configured to polish a polish object by depressing the polish object against a polish pad is disclosed. The retainer ring is configured to depress the polish pad at a second side thereof. The retainer ring includes a contact surface contacting the polish pad. The contact surface applies depressing force on the polish pad. The depressing force is directed from a polish head side and is applied so as to be centered on an imaginary circle of pressure center having a radius falling substantially in a middle of an inner radius of the retainer ring and an outer radius of the retainer ring. An area of the contact surface is greater in a first region inside the circle of pressure center than in a second region outside the circle of pressure center.

Retainer ring, polish apparatus, and polish method

A polish apparatus including a rotatable table configured to receive a polish pad having a polish surface; a polish head configured to hold a polish object and configured to be capable of placing the polish object in contact with the polish surface while holding the polish object; at least one contact portion being provided with a contact surface and configured to be capable of contacting the polish surface when the table is in rotation; and a measurement portion configured to measure a state of the contact surface of the contact portion being configured to contact the polish surface of the polish pad.

Polish apparatus, polish method, and method of manufacturing semiconductor device

A polishing apparatus including a membrane including a pressure chamber and being configured to hold a wafer; a polishing portion including a polish pad contacting a polish surface of the wafer when polishing the wafer; a monitoring portion monitoring a state of inflation of the pressure chamber; and a controller controlling polishing of the wafer by the polishing portion based on a result of monitoring by the monitoring portion.

Polishing apparatus and polishing method

According to one embodiment, a semiconductor device includes a substrate, a foundation structure, a first insulating film, and a second insulating film. The foundation structure is provided on the substrate. The foundation structure includes a plurality of circuit components and a gap provided between the circuit components. The first insulating film is provided on the foundation structure. The second insulating film is provided on the first insulating film. A Young's modulus of the second insulating film is lower than a Young's modulus of the first insulating film and a Young's modulus of a silicon oxide film.

Semiconductor device and method for manufacturing same

A method for polishing an organic film, comprising polishing an exposed organic film provided on a semiconductor substrate by use of slurry containing resin particles.

Method for polishing organic film on semiconductor substrate by use of resin particles, and slurry

An abrasive for a semiconductor device comprises cerium oxide particles and coating materials. The cerium oxide particles are made principally of cerium oxide (CeO). The coating materials cover the surface of the cerium oxide particles.

Abrasive used for planarization of semiconductor device and method of manufacturing semiconductor device using the abrasive

In forming an electrolytic water, pure water or ultra-pure water is added to at least one solid supporting electrolyte selected from the group consisting of oxalic acid, ammonium oxalate, ammonium formate, ammonium bicarbonate, and ammonium tartrate to prepare a solution saturated with the supporting electrolyte. The solution containing the supporting electrolyte is subjected to hydrolysis to obtain an anodic water and a cathodic water.

Method and apparatus for forming electrolytic water and apparatus for washing semiconductor substrate using electrolytic water-forming apparatus

A semiconductor wafer or a film formed thereon is polished by using a polishing agent comprising abrasive containing silica particles as the main component, water as a solvent, and a water-soluble cellulose, an alkali metal impurity content of the polishing agent being 5C ppm or less where the polishing agent contains C % by weight of the water-soluble cellulose, so as to flatten the semiconductor wafer without doing damage to the wafer or the film formed thereon and without bringing about a dishing problem in the polished surface.

Abrasive and method for polishing semiconductor substrate

In a CMP process for flatting a surface of a film on a semiconductor wafer, ionized water is used as rinsing liquid in the post-polishing step performed after the main CMP polishing step. With ionized water as rinsing liquid, abrasive particles adhered to the film surface during the main polishing step are removed.

Method of manufacturing a semiconductor device and an apparatus for

Disclosed is an apparatus for manufacturing an electrolytic ionic water for treating a substrate, comprising an electrolytic cell including an anodic chamber and a cathodic chamber partitioned from the anodic chamber by a porous membrane, a first carbon electrode housed in the anodic chamber, a second carbon electrode housed in said cathodic chamber, apparatus for supplying an electrolyte solution prepared by dissolving a supporting electrolyte in pure water or ultra pure water into the electrolytic cell, apparatus for applying a DC voltage between the first and second carbon electrodes and so as to electrolyze the electrolyte solution, thereby to form an oxidizing ionic water in the anodic chamber and a reducing ionic water in the cathodic chamber, a first discharge port for discharging the oxidizing ionic water from within the anodic chamber, and a second discharge port for discharging the reducing ionic water from within the cathodic chamber.

Apparatus and method for manufacturing electrolytic ionic water and

A method of reducing the concentration of metal ions in pure water or ultrapure water and thereby obtaining pure water or ultrapure water. Such purified pure water or purified ultrapure water is used, for example, when washing semiconductor wafers, as a starting material of electrolytic ionic water, or for diluting washing water. A pair of carbon electrodes is disposed in an ultrapure water storage tank containing pure water or ultrapure water or in a purifying tank disposed in a line leading from an ultrapure water storage tank. A D.C. voltage is applied across the electrode pair. A carbon electrode material having a large specific surface area is chosen, and an electrode structure with which there is little detachment of carbon fragments is used. After the carbon electrode is molded, a carbon layer is formed on the surface of the molding by dipping the molding in an amorphous carbon bath. Because the carbon layer penetrates into the pores in the molding surface, the bonds between the carbon elements are strengthened, preventing carbon fragments from detaching. Because the electrode surfaces may be covered with filters, even if carbon fragments do detach, they are caught by the filters, preventing particles from entering the purified pure water or purified ultrapure water.

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Yokkaichi, Japan

Jun Takayasu