Samsung Electronics Co., Ltd.

Jun-soo Kim

Tae-Yeol Kim

Hyon-wook Ra

Seo-bum Lee

Chung-hwan Shin

Sang-yong Lee

Soo-Seong Kim

Hyang-ki Kim

Sang-hoon Paik

Han-gyu Ryu

A semiconductor device is provided including a resistor structure, the semiconductor device including a substrate having an upper surface perpendicular to a first direction; a resistor structure including a first insulating layer on the substrate, a resistor layer on the first insulating layer, and a second insulating layer on the resistor layer; and a resistor contact penetrating the second insulating layer and the resistor layer. The tilt angle of a side wall of the resistor contact with respect to the first direction varies according to a height from the substrate. The semiconductor device has a low contact resistance and a narrow variation of contact resistance.

Semiconductor devices including resistor structures

A microwave oven includes a main body, a door opening and closing the main body, and a control panel placed in one side of the main body and provided with a plurality of function operators. A guide line is provided on the control panel and lights up to guide manipulation order of the function operator.

Microwave oven having an illuminated guide line

A bipolar junction transistor includes a semiconductor substrate having a surface, a base region of first conductivity type in the substrate, and an emitter region of second conductivity type extending from the surface into the base region to form a generally concave semiconductor junction having an apex oriented towards the surface. The emitter region preferably includes a plurality of contiguous emitter subregions extending from the surface into the base region in an arcuate manner and merging to form the generally concave semiconductor junction. The transistor preferably includes an emitter terminal electrically contacting the emitter region at an emitter contact area on the surface, the emitter contact area having a central portion substantially centered with respect to the apex of the semiconductor junction. To produce the bipolar junction transistor, a base layer of first conductivity type is provided in a semiconductor substrate, ions of second conductivity type implanted through the base layer surface in portions of the base layer surface increasing in area from a central portion of the base layer surface laterally towards outer portions of the base layer surface, and the implanted ions diffused into the base layer to thereby create the emitter region and the concave semiconductor junction. Preferably, the ions are implanted by depositing an oxide or other masking layer on the base layer, selectively etching the masking layer to expose the plurality of surface portions, and then implanting the ions into the exposed surface portions.

Methods of fabricating bipolar junction transistors having an increased

Bipolar junction transistors having an increased safe operating area

Growing community of inventors

Uijeongbu-si, South Korea

Jun-soo Kim