Samsung Electronics Co., Ltd.

Samsung Electro-mechanics Co., Ltd.

Jun-sik Hwang

Woon-bae Kim

Moon-chul Lee

In-sang Song

Yun-kwon Park

Chang-youl Moon

Dong-kyun Kim

Byeoung-ju Ha

Jong-oh Kwon

Byung-gil Jeong

Seok-Whan Chung

Kyu-Dong Jung

Ji-Hyuk Lim

Suk-jin Ham

Sang-on Choi

Il-Jong Song

Eun-sung Lee

Hae-seok Park

Duck-hwan Kim

Jong-Seok Kim

Jea-Shik Shin

Kae-dong Back

Il-jong Song

Qian Wang

Chang-seung Lee

Jun-youn Kim

Yoon-sun Choi

Dong-sik Shim

Joo-ho Lee

Jung-mok Bae

Seog-woo Hong

Su-hee Chae

Kyung-won Na

Eok-su Kim

Ki-deok Bae

Won-youl Choi

Ji-hyuk Lim

Myung-sam Kang

Byeong-ju Ha

In one embodiment, the electrowetting device includes a first medium; a second medium that is not mixed with the first medium and has a refractive index different from a refractive index of the first medium; an upper electrode that adjusts an angle of a boundary surface between the first medium and the second medium; and a barrier wall that has a side surface surrounding the first and second mediums, allows the upper electrode to be disposed on a portion of the side surface, and has irregular widths.

Electrowetting device and method of manufacturing the same

Provided are a piezoelectric micro speaker having a piston diaphragm and a method of manufacturing the piezoelectric micro speaker. The piezoelectric micro speaker includes: a substrate having a cavity formed therein; a vibrating membrane that is disposed on the substrate and covers at least a center part of the cavity; a piezoelectric actuator disposed on the vibrating membrane so as to vibrate the vibrating membrane; and a piston diaphragm that is disposed in the cavity and performs piston motion by vibration of the vibrating membrane. When the vibrating membrane vibrates by the piezoelectric actuator, the piston diaphragm, which is connected to the vibrating membrane through a piston bar, performs a piston motion in the cavity.

Piezoelectric micro speaker having piston diaphragm and method of manufacturing the same

A light emitting device (LED) includes a stress control layer having a compressive stress on a substrate, a bonding layer on the stress control layer, a semiconductor layer on the bonding layer and including an active region for emitting light on the bonding layer, a first electrode on a lower surface of the substrate, and a second electrode on the semiconductor layer. The compressive stress of the stress control layer is between about 1 and about 20 GPa.

Light emitting device

Provided are a piezoelectric micro speaker and a method of manufacturing the same. The piezoelectric micro speaker includes: a substrate having a cavity therein; a diaphragm that is disposed on the substrate, the diaphragm including a vibrating membrane that overlaps the cavity; a piezoelectric actuator that is disposed on the vibrating membrane; and a weight that is disposed in the cavity and attached to a center portion of the vibrating membrane.

Piezoelectric micro speaker including weight attached to vibrating membrane and method of manufacturing the same

A piezoelectric micro speaker and a method of manufacturing the same are provided. The piezoelectric micro speaker includes a substrate having a cavity formed therein and a diaphragm that is disposed on the substrate that overlaps the cavity. A plurality of first vibrating membranes having concentric annular ring shapes are disposed in a first region of the diaphragm corresponding to a center of the cavity. A second vibrating membrane including a different material from that of the first vibrating membranes is formed in the second region of the diaphragm corresponding to an edge of the cavity. A piezoelectric actuator for vibrating the first vibrating membranes is formed on and between the concentric annular rings of the first vibrating membranes.

Piezoelectric micro speaker including annular ring-shaped vibrating membranes and method of manufacturing the piezoelectric micro speaker

Provided is a method for fabricating a duplexer. The method includes fabricating an embedded PCB having an isolation part built therein and forming pads on certain areas of an upper side of the embedded PCB to connect with an external terminal. Further, a first filter and a second filter are separately fabricated, each having at least one film bulk acoustic resonator which is fabricated by depositing a lower electrode, a piezoelectric layer, and an upper electrode in this respective order. Thereafter, the first and second filters are bonded onto the pads formed on the embedded PCB. The entire surface of the embedded PCD is packaged at a predetermined distance from the first and second filters.

Method of fabricating a duplexer using an embedded PCB

A micro speaker includes a substrate having a cavity formed therein, a diaphragm formed on the substrate overlapping the cavity. The diaphragm includes a first vibration membrane formed in a first area corresponding to a center portion of the cavity and a second vibration membrane formed in a second area corresponding to an edge portion of the cavity and formed of material different from that used for the first vibration membrane. A piezoelectric actuator is formed including a first electrode layer formed on the first vibration membrane, a piezoelectric layer formed on the first electrode layer, and a second electrode layer formed on the piezoelectric layer, and first and second curved lead wires, respectively connected to the first and second electrode layers across the second area, which are symmetrical to the center of the piezoelectric actuator.

Piezoelectric micro speaker with curved lead wires and method of manufacturing the same

Provided is a piezoelectric micro speaker. The piezoelectric micro speaker includes a device plate having a front cavity, a front plate having a radiation hole which communicates with the front cavity in front of the device plate, and a rear plate having a rear cavity and a vent portion. A rear portion of the device plate forms a wall of the vent portion. The device plate includes at least one first vent hole which communicates with the vent portion, and the front plate includes at least one second vent hole which communicates with the first vent hole.

Piezoelectric micro speaker

An inductor embedded in a substrate, including a substrate, a coil electrode formed by filling a metal in a spiral hole formed on the substrate, an insulation layer formed on the substrate, and an external connection pad formed on the insulation layer to be connected to the coil electrode. The inductor-embedded substrate can be used as a cap for a micro device package by forming a cavity on its bottom surface.

Inductor embedded in substrate, manufacturing method thereof, micro device package, and manufacturing method of cap for micro device package

A high-integrated duplexer and a fabrication method thereof. The duplexer has a first filter to pass a signal of a transmitted frequency band, a second filter to pass a signal of a received frequency band, an embedded PCB having the first and second filters bonded on a certain area of a surface of an upper side in a predetermined distance from each other, and an isolation part to prevent a signal interference between the first and second filters, and a packaging substrate to package the entire upper side of the embedded PCB so that the packaging substrate is located above and separated from the first and second filters by a predetermined distance. The fabricated high-integrated duplexer has a small size and high performance.

Duplexer using an embedded PCB and method of fabricating the same

A film bulk acoustic resonator, and a method for manufacturing the same. The film bulk acoustic resonator includes a substrate, a protection layer vapor-deposited on the substrate, a membrane vapor-deposited on the protection layer and at a predetermined distance from an upper side of the substrate, and a laminated resonance part vapor-deposited on the membrane. Further, the manufacturing method includes vapor-depositing a membrane on a substrate, forming protection layers on both sides of the membrane, vapor-depositing a laminated resonance part on the membrane, and forming an air gap by removing a part of the substrate disposed between the protection layers. Accordingly, the membrane can be formed in a simple structure and without stress, and the whole manufacturing process is simplified.

Method for manufacturing a film bulk acoustic resonator

A wafer level package for a surface acoustic wave device and a fabrication method thereof include a SAW device formed with a SAW element on an upper surface of a device wafer; a cap wafer joined on an upper part of the SAW element; a cavity part housing the SAW element between the cap wafer and the SAW device; a cap pad formed on an upper surface of the cap wafer; and a metal line formed to penetrate through the cap wafer to electrically connect the cap pad and the SAW element, the device wafer and the cap wafer being made of the same materials.

Wafer level package for surface acoustic wave device and fabrication method thereof

A radio frequency (RF) module and a multi RF module including the same include a base substrate, a first element capable of processing RF signals formed on the base substrate, a second element capable of processing RF signals separated from and disposed over the first element, a cap substrate coupled with the base substrate to encapsulate the first and second elements including a plurality of through electrodes that electrically connect the first and second elements to the outside, and a bonding pad that encapsulates and joins the base substrate and the cap substrate and electrically connects the first and second elements to the through electrodes.

RF module with multi-stack structure

A cap wafer, fabrication method, and a semiconductor chip are provided. The cap wafer includes a cap wafer substrate; a penetrated electrode formed to penetrate the cap wafer substrate; and an electrode pad connected with a lower portion of the penetrated electrode on a lower surface of the cap wafer substrate, wherein the penetrated electrode has an oblique section which gradually widens from an upper surface to the lower surface of the cap wafer substrate. The fabrication method includes forming an oblique-via hole on a lower surface of a cap wafer substrate, the oblique-via hole having an oblique section which gradually narrows in a direction moving away from the lower surface of the cap wafer substrate; and forming a penetrated electrode in the oblique-via hole. The semiconductor chip includes a base wafer; a cap wafer; a cavity; a penetrated electrode; and a pad bonding layer.

Cap wafer, semiconductor chip having the same, and fabrication method thereof

A wafer level packaging cap and method thereof for a wafer level packaging are provided. The wafer level packaging cap covering a device wafer with a device thereon, includes a cap wafer having on a bottom surface a cavity providing a space for receiving the device, and integrally combined with the device wafer, a plurality of metal lines formed on the bottom surface of the cap wafer to correspond to a plurality of device pads formed on the device wafer to be electrically connected to the device, a plurality of buffer portions connected to the plurality of metal lines and comprising a buffer wafer with a plurality of grooves and a metal filled in the plurality of grooves, a plurality of connection rods electrically connected to the plurality of buffer portions and penetrating the cap wafer from a top portion of the buffer portion, and a plurality of cap pads formed on a top surface of the cap wafer and electrically connected to a plurality of connection rods.

Growing community of inventors

Yongin-si, South Korea

Jun-sik Hwang