Tokyo Electron Limited

Jun Ooyabu

Akira Koshiishi

Jun Hirose

Daisuke Hayashi

Masahiro Ogasawara

Michishige Saito

Taichi Hirano

Hiroyuki Ishihara

Tetsuo Yoshida

Hiromitsu Sasaki

Kohji Numata

Chishio Koshimizu

Hideki Takeuchi

Hiroshi Koizumi

Hiroki Endo

Hideki Nagaoka

Hideaki Tanaka

Keiki Ito

Tsuyoshi Shimazu

Shigeru Tahara

Kosuke Imafuku

Kunihiko Hinata

Nobuyuki Okayama

Masaaki Miyagawa

Toshifumi Nagaiwa

Wataru Shimizu

Mitsuru Hashimoto

Tomonori Miwa

Shunsuke Mizukami

Toshikatsu Wakaki

Shuei Sekizawa

A plasma processing method is arranged to supply a predetermined process gas into a plasma generation space in which a target substrate is placed, and turn the process gas into plasma. The substrate is subjected to a predetermined plasma process by this plasma. The spatial distribution of density of the plasma and the spatial distribution of density of radicals in the plasma are controlled independently of each other relative to the substrate by a facing portion opposite the substrate to form a predetermined process state over the entire target surface of the substrate.

Plasma processing method and apparatus

A partial pressure control systemincludes two valveswhich are branched from an operation gas supply pipeand which variably control operation gas, pressure sensorswhich are respectively connected to the each valvesin series and which detect pressure of the operation gas, and a controllerwhich proportionally controls the operation of the valvesbased on detection result of the pressure sensors, thereby relatively controlling pressures Pand Pof the two valves. With this configuration, it is possible to reduce wastefull consumption of the operation gas, and to enhance the responsivity with respect to change of setting and the like.

Flow rate control system and shower plate used for partial pressure control system

A ring mechanism, comprising a focus ring and divided cover rings surrounding a wafer W placed on a loading table (lower electrode) mounted in a processing chamber, wherein a ring-shaped clearance &#x3b4;is provided between the divided rings to spread plasma to the radial outside of the focus ring to allow plasma to get therein, whereby a potential difference between the wafer W and the focus ring can be eliminated to prevent arc discharge by plasma from occurring between the wafer W and the focus ring.

Ring mechanism, and plasma processing device using the ring mechanism

A focus ring and a plasma processing apparatus capable of improving an in-surface uniformity of a surface and reducing occurrences of deposition on a backside surface of a peripheral portion of a semiconductor wafer compared to a conventional case are provided. Installed in a vacuum chamber is a susceptor for mounting the semiconductor wafer thereon and a focus ring is installed to surround the semiconductor wafer mounted on the susceptor. The focus ring includes an annular lower member made of a dielectric, and an annular upper member made of a conductive material and mounted on the lower member. The upper member includes a flat portion which is an outer peripheral portion having a top surface positioned higher than a surface to be processed of the semiconductor wafer W, and an inclined portion which is an inner peripheral portion inclined inwardly.

Focus ring and plasma processing apparatus

A plasma processing apparatus includes a process container configured to have a vacuum atmosphere therein. An upper electrode is disposed to face a target substrate placed within the process container. An electric feeder includes a first cylindrical conductive member continuously connected to the upper electrode in an annular direction. The electric feeder is configured to supply a first RF output from a first RF power supply to the upper electrode.

Plasma processing apparatus and method

A plasma processing apparatus includes a process container configured to have a vacuum atmosphere therein. A first upper electrode is disposed to have a ring shape and to face a target substrate placed within the process container. A second upper electrode is disposed radially inside the first upper electrode and electrically insulated therefrom. A first electric feeder is configured to supply a first RF output from a first RF power supply to the first upper electrode at a first power value. A second electric feeder branches from the first electric feeder and is configured to supply the first RF output from the first RF power supply to the second upper electrode at a second power value smaller than the first power value.

Plasma processing apparatus and method, and electrode plate for plasma processing apparatus

Partial pressure control system, flow rate control system and shower plate used for partial pressure control system

A plasma etching apparatus includes a worktable disposed in a hermetic process chamber. The worktable has a main surface for placing a wafer thereon, and a sub-surface for placing a focus ring thereon. A cooling mechanism for supplying cold to the main surface and sub-surface is disposed in the worktable. A heat transfer medium made of conductive silicone rubber is interposed between the sub-surface and focus ring. A press mechanism presses the focus ring toward the sub-surface. The heat transfer medium improves thermal conductivity between the sub-surface and focus ring to be higher than in a case with no thermal transfer medium.

Worktable device and plasma processing apparatus for semiconductor process

A plasma processing method comprises the steps of supplying a low-frequency bias to a first electrode carrying a substrate, and supplying a high-frequency power to a second electrode facing the first electrode, wherein the low-frequency bias is supplied to the first electrode in advance of starting plasma by the energy of the high-frequency power, with an electric power sufficient to form an ion-sheath on the surface of the substrate.

Plasma processing method and apparatus for eliminating damages in a plasma process of a substrate

A plasma processing method includes supplying a low-frequency bias to a first electrode carrying a substrate, and supplying a high-frequency power to a second electrode facing the first electrode, wherein the low-frequency bias is supplied to the first electrode in advance of staring plasma by the energy of the high-frequency power, with an electric power sufficient to form an ion-sheath on a surface of the substrate. A plasma processing apparatus is also provided.

A plasma processing system capable of carrying out a uniform processing is provided. According to the present invention, a substantially annular high-frequency antenna 156 of a predetermined number of turns, e.g., 1 turn, is provided in an opening 102b via a first shielding member 160 and a dielectric member 158. The capacitance of a variable capacitor 172 connected to ground is adjusted so that series resonance occurs at the mid point of the high-frequency antenna 156. With this construction, it is possible to form a desired electric field in a plasma producing space to produce a high-density plasma. In addition, a feeding member 126 is formed so that the substantially vertical cross-section thereof has a profile expressed by an exponential function r=f(L). Therefore, it is possible to supply a high-frequency power to an upper electrode without causing the electric breakdown and the damping of the high-frequency power.

Plasma processing system

Upper electrode for manufacturing semiconductors

Growing community of inventors

Nirasaki, Japan

Jun Ooyabu