Tokyo Electron Limited

Jun Nonaka

Takao Inada

Takashi Yabuta

Hiroshi Yoshida

Kouji Ogura

Mitsunori Nakamori

Shogo Mizota

Daisuke Saiki

Tatsuya Nagamatsu

Yoshinori Nishiwaki

Yuta Hamashima

Koji Tanaka

Itaru Kanno

Koukichi Hiroshiro

Takashi Nagai

Takumi Honda

Kazuya Koyama

Hiroyuki Suzuki

Keita Hirase

Tomiyasu Maezono

Koji Ogura

Kazuhiro Teraoka

A substrate processing method arranges a plurality of substrates in a storage area of a chamber, supplies an organic solvent to the plurality of substrates, arranges the plurality of substrates in a drying area, supplies a vapor of a hydrophobizing agent from a hydrophobizing agent nozzle to the plurality of substrates, arranges the plurality of substrates in the storage area, supplies an organic solvent from a first organic solvent nozzle to the plurality of substrates, supplies a vapor of an organic solvent from a second organic solvent nozzle to the drying area in a state where a liquid is stored in the storage area and the plurality of substrates are dipped in a liquid.

Substrate processing method

A substrate processing apparatus includes a chamber, a holding unit, a hydrophobizing agent nozzle, a first organic solvent nozzle, a second organic solvent nozzle, and an exhaust port. The chamber has a gastight space that is capable of accommodating the plurality of substrates. The holding unit lifts or lowers the plurality of substrates between a storage area where a liquid is stored in the gastight space and a drying area that is located above the storage area in the gastight space. The hydrophobizing agent nozzle supplies a vapor of a hydrophobizing agent to the drying area. The first organic solvent nozzle supplies an organic solvent from the drying area to the storage area. The second organic solvent nozzle supplies a vapor of an organic solvent to the drying area. The exhaust port discharges a gas in the gastight space.

Substrate processing apparatus

A substrate processing method includes: generating a mixture liquid by mixing a phosphoric acid aqueous solution with an additive that suppresses precipitation of silicon oxide in a tank and circulating the mixture liquid through a circulation path that exits and returns to the tank, the circulation path including a back pressure valve; sending the mixture liquid to a processing bath through a liquid path diverging from the circulation path and positioned upstream from the back pressure valve; and supplying a silicon-containing compound aqueous solution to the mixture liquid generated in the generating. The back pressure valve is fully open in the generating and throttled in the sending. A substrate processing apparatus includes a processing bath, a mixing device, a liquid path, and a silicon solution supply.

Substrate processing apparatus, mixing method, and substrate processing method

A substrate processing apparatus includes: a processing container, a mixing device, a liquid feeding path, and a controller. The processing container processes a substrate by immersing the substrate in a processing liquid. The mixing device mixes a phosphoric acid aqueous solution and an additive, to produce a mixed liquid to be used as a raw material of the processing liquid. The liquid feeding path feeds the mixed liquid from the mixing device to the processing container. The controller controls the substrate processing apparatus. The controller performs a control to feed the mixed liquid from the mixing device to the processing container in which the substrate is immersed, after a phosphoric acid concentration of the mixed liquid is regulated from a first concentration to a second concentration higher than the first concentration. The first concentration is a concentration when the phosphoric acid aqueous solution is supplied to the mixing device.

Substrate processing apparatus and substrate processing method

A substrate processing apparatus includes a liquid processing tank, and a hydrophobizing gas supply unit. The liquid processing tank stores a processing liquid and dips a plurality of substrates in the processing liquid to liquid-process the plurality of substrates. The hydrophobizing gas supply unit supplies a gas of a hydrophobizing agent to the plurality of substrates after liquid processing thereof.

A mixing apparatus includes a phosphoric acid aqueous solution supply, an additive supply, a tank, a phosphoric acid aqueous solution supply path and an additive supply path. The phosphoric acid aqueous solution supply is configured to supply a phosphoric acid aqueous solution. The additive supply is configured to supply an additive configured to suppress precipitation of a silicon oxide. The phosphoric acid aqueous solution supply path is configured to connect the phosphoric acid aqueous solution supply with the tank. The additive supply path is configured to connect the additive supply with the tank. The additive is supplied while fluidity is imparted to the phosphoric acid aqueous solution supplied from the phosphoric acid aqueous solution supply into the tank.

Mixing apparatus, mixing method and substrate processing system

A method of processing a substrate includes loading the substrate to which a processing liquid is adhered, inside a processing container, removing the processing liquid adhering to the substrate by supplying a first organic solvent to the loaded substrate, causing the substrate to be water-repellent by supplying a water repellent to the substrate from which the processing liquid has been removed, supplying a second organic solvent to the water-repellent substrate, and drying the substrate by volatilizing the second organic solvent adhering to the substrate.

Substrate processing apparatus and method of processing substrate

A control device of a substrate processing apparatus includes a reading unit, an estimation unit, a comparison unit, and a correction unit. The reading unit reads out a reference processing condition for processing a substrate. The estimation unit estimates an actual processing condition when the substrate is processed. The comparison unit compares the reference processing condition and the actual processing condition with each other. The correction unit corrects a processing condition for the substrate based on a comparison result in the comparison unit.

Control device of substrate processing apparatus and control method of substrate processing apparatus

A substrate processing apparatus includes a processing bath, a mixing device, a liquid path, and a silicon solution supply. A substrate is immersed in the processing bath to be processed. The mixing device generates a mixture liquid by mixing a phosphoric acid aqueous solution with an additive that suppresses precipitation of silicon oxide. The liquid path sends the mixture liquid from the mixing device to the processing bath. The silicon solution supply is connected to at least one of the liquid path and the processing bath, and supplies a silicon-containing compound aqueous solution to the mixture liquid supplied from the mixing device.

A substrate processing apparatus includes a holding device that holds a substrate horizontally, a rotation device that rotates the holding device such that the substrate held by the holding device is rotated, a supply device that includes a nozzle and supplies etching liquid from the nozzle to the substrate held by the holding device, a movement device that moves the nozzle with respect to the substrate held by the holding device, and a control device including circuitry that executes a scan process in which the circuitry controls the rotation, movement and supply devices such that while the liquid is supplied from the nozzle to the substrate, the nozzle is moved back and forth over the substrate between first and second positions on outer peripheral side of the substrate relative to the first position. The circuit of the control device executes the scan process multiple times while changing the first position.

Disclosed is a substrate liquid processing method. The method includes producing a processing liquid including deionized water, carbon dioxide, and ammonia, which has a PH of a predetermined value in a range of pH 5 to 9; and processing a substrate having a metal exposed, using the processing liquid.

Substrate liquid processing method and substrate liquid processing apparatus

A liquid processing apparatus of the present disclosure holds and rotate a substrate in a substrate holding unit, ejects an etching liquid while moving a main nozzle of a main nozzle unit between a first position where the etching liquid reaches a center of the substrate and a second position closer to a peripheral side of the substrate than the first position, and then, ejects the etching liquid to the substrate from a sub nozzle provided at a third position closer to the peripheral side of the substrate than the first position at an ejection flow rate higher than that from the main nozzle.

Liquid processing apparatus, liquid processing method, and storage medium

A substrate liquid treatment method includes: (a) rotating the substrate about the vertical axis; (b) supplying the treatment liquid to the rotating substrate from the second nozzle with a falling point of the treatment liquid supplied from the second nozzle moving from the central portion to the peripheral portion of the substrate, while supplying the treatment liquid to the central portion of the substrate from the first nozzle, (c) after (b), moving the second nozzle from the peripheral portion to the central portion of the substrate with the supplying of the treatment liquid from the second nozzle being stopped, while continuing supplying the treatment liquid to the central portion of the rotating substrate from the first nozzle; and (d) after (c), supplying the treatment liquid to the rotating substrate from the second nozzle.

Substrate liquid treatment apparatus, substrate liquid treatment method and storage medium

Disclosed are a substrate liquid processing apparatus and method for performing a liquid processing on a substrate using a processing liquid, and a computer-readable recording medium with a substrate liquid processing program recorded therein. In the method, a first chemical liquid supply step is performed to supply a first chemical liquid from a first chemical liquid supply unit to a processing liquid storage unit, a first chemical liquid purifying step is performed to purify the first chemical liquid in a chemical liquid purifying unit, a second chemical liquid supply step is performed to supply a second chemical liquid from a second chemical liquid supply unit to the processing liquid storage unit, and a processing liquid supply step is performed to supply the processing liquid obtained by mixing the first and second chemical liquids from the processing liquid supply unit to substrate liquid processing units.

Substrate liquid processing apparatus and method, and computer-readable recording medium with substrate liquid processing program recorded therein

A surface of a substrate can be dried cleanly after liquid-processed by a liquid processing method and a liquid processing apparatus. The liquid processing method includes forming a liquid film of a rinse solution on an entire surface of a substrate having thereon a hydrophobic region by supplying, onto a central portion of the surface of the substrate, the rinse solution for rinsing a chemical liquid supplied on the substrate at a first flow rate while rotating the substrate at a first rotation speed; forming a stripe-shaped flow of the rinse solution on the surface of the substrate by breaking the liquid film formed on the entire surface of the substrate; and moving a discharge unit configured to supply the rinse solution toward a periphery of the substrate until the stripe-shaped flow of the rinse solution is moved outside the surface of the substrate.

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Kumamoto, Japan

Jun Nonaka