Toto Ltd.

Canon Anelva Corporation

Anelva Corporation

Choshu Industry Co., Ltd.

Jun Miyaji

Osamu Okamoto

Masayoshi Ikeda

Yasumi Sago

Kazuaki Kaneko

Tetsuo Kitabayashi

Noriaki Tateno

Tomio Takamura

Tadashi Hirayama

Yoshiyuki Ikemura

Masahiko Tamaru

Masami Ando

Ikuo Itakura

Shoichiro Himuro

The present invention provides an electrostatic chuck in which the surface can be kept smooth after being exposed to plasma, so as to protect a material to be clamped such as a silicon wafer from being contaminated with particles, and which is excellent in clamping and releasing a material to be clamped and easy to manufacture by low-temperature firing. The electrostatic chuck includes a dielectric material in which alumina is 99.4 wt % or more, and titanium oxide is more than 0.2 wt % and equal to or less than 0.6 wt %, wherein the electrostatic chuck's volume resistivity is 10-10&#x3a9;cm in room temperature, and wherein the titanium oxide segregates in boundaries of particles of the alumina.

Electrostatic chuck

An electrostatic chuck includes: a metal plate with an insulator film formed on a surface thereof by thermal spraying; and a dielectric substrate with an electrode formed on a surface thereof. The metal plate and the dielectric substrate are bonded together via an insulative adhesive interposed therebetween so that the insulator film is opposed to the electrode, and the insulator film has a thickness of 0.6 mm or less. Alternatively, An electrostatic chuck includes: a metal plate with an insulator film formed on a surface thereof by thermal spraying; and a dielectric substrate with an electrode selectively formed on a surface thereof. The metal plate and the dielectric substrate are bonded together via an insulative adhesive interposed therebetween so that the insulator film is opposed to the electrode. The insulative adhesive is interposed also between the insulator film and a portion of the surface of the dielectric substrate where the electrode is not formed, and the insulative adhesive has a thermal conductivity of 1 W/mK or more.

Electrostatic chuck and method for manufacturing same

An electrostatic chuck module for a semiconductor manufacturing apparatus which can be cooled with water and in which there is no penetration leak includes an electrostatic chuck plate of alumina and a cooling plate which is bonded to the electrostatic chuck, wherein the cooling plate is formed by forging processing to a Cu-based composite material comprising Cu&#x2014;W, Cu&#x2014;W&#x2014;Ni, Cu&#x2014;Mo, or Cu&#x2014;Mo&#x2014;Ni. By adjusting the ratio of Cu and Ni having a great thermal expansion coefficient and W and Mo having a small thermal expansion coefficient in a Cu-based composite material, it is possible to obtain a highly thermally conductive material having the same thermal expansion coefficient as an alumina material for an electrostatic chuck. However, since such a composite material has a penetration leak, it cannot be used in a vacuum system. According to the present invention, by conducting forging processing, a penetration leak can be prevented. Also, corrosion resistance which is important for a cooling plate can be improved by applying a Ni, Cr or Cu film by plating or sputtering.

Electrostatic chuck module and cooling system

The object of the present invention is to provide an electrostatic chuck in which the surface can be kept smooth after being exposed to plasma, so as to protect a material to be clamped such as a silicon wafer from being contaminated with particles, and which is excellent in clamping and releasing a material to be clamped. According to the present invention, there is provided an electrostatic chuck comprising a dielectric material in which alumina is 99.4 wt % or more, titanium oxide is more than 0.2 wt % and equal to or less than 0.6 wt %, whose average particle diameter is 2 &#x3bc;m or less, and whose volume resistivity is 10-10&#x3a9;cm in room temperature, wherein the electrostatic chuck is used in a low temperature of 100&#xb0; C or less.

The object of the present invention is to provide an electrostatic chuck in which the surface can be kept smooth after being exposed to plasma, so as to protect a material to be clamped such as a silicon wafer from being contaminated with particles, and which is excellent in clamping and releasing a material to be clamped. According to the present invention, there is provided an electrostatic chuck comprising a dielectric material in which alumina is 99.4 wt % or more, titanium oxide is more than 0.2 wt % and equal to or less than 0.6 wt %, whose average particle diameter is 2 &#x3bc;m or less, and whose volume resistivity is 10-10&#x3a9;cm in room temperature, wherein the electrostatic chuck is used in a low temperature of 100&#xb0; C. or less.

A brine supply unit for supplying brine to at least one load after controlling the brine so as to meet a target temperature of the load comprises: a heat exchanger disposed at a brine-cooling channel, through which the brine returned from the load flows, for cooling the brine with water for industrial use; a heater disposed at a brine-heating channel formed in parallel with the brine-cooling channel, through which the brine flows, for heating the brine; a mixing section disposed at a connecting portion between the brine-cooling channel and the brine-heating channel, for mixing the cooled brine and the heated brine; and a tank disposed between the mixing section and the load, which has a capacity of about 10 liters or more and is constructed so that the brine can pass therethrough slowly to relieve a sudden temperature change of the brine.

Growing community of inventors

Fukuoka, Japan

Jun Miyaji