Taiwan Semiconductor Manufacturing Comp. Ltd.

Jun-Lung Huang

Syun-Ming Jang Jang

Tien-I Bao

Lain-Jong Li

Shwang-Ming Jeng

Yi-Chen Huang

Jeng-Cheng Liu

Jen-Cheng Liu

Hun-Jan Tao

Bor-Wen Chan

Peng-Fu Hsu

Baw-Ching Perng

Yin-Shen Chu

Hsin-Ching Shih

Ching-Hui Ma

Li-Chih Chaio

Lawrance Hsu

Hong-Ming Chen

A method for removing organic material from an opening in a low k dielectric layer and above a metal layer on a substrate is disclosed. An ozone water solution comprised of one or more additives such as hydroxylamine or an ammonium salt is applied as a spray or by immersion. A chelating agent may be added to protect the metal layer from oxidation. A diketone may be added to the ozone water solution or applied in a gas or liquid phase in a subsequent step to remove any metal oxide that forms during the ozone treatment. A supercritical fluid mixture that includes COand ozone can be used to remove organic residues that are not easily stripped by one of the aforementioned liquid solutions. The removal method prevents changes in the dielectric constant and refractive index of the low k dielectric layer and cleanly removes residues which improve device performance.

Process for removing organic materials during formation of a metal interconnect

A new method of forming a composite etching stop layer is described. An etching stop layer is deposited on a substrate wherein the etching stop layer is selected from the group consisting of: silicon carbide, silicon nitride, SiCN, SiOC, and SiOCN. A TEOS oxide layer is deposited by plasma-enhanced chemical vapor deposition overlying the etching stop layer. The composite etching stop layer has improved moisture resistance, better etching selectivity, and lower dielectric constant than other etching stop layers.

Composite etching stop in semiconductor process integration

A method for improving a photolithographic patterning process to avoid undeveloped photoresist contamination in a semiconductor manufacturing process including providing a first semiconductor feature having an anisotropically etched opening including sidewalls. The first semiconductor feature further provide an overlying photoresist layer photolithographically patterned for anisotropically etching a second semiconductor feature opening overlying and encompassing the first semiconductor feature; blanket depositing a polymeric passivation layer over the overlying photoresist layer including covering at least a portion of the sidewalls including polymeric containing residues; and, removing the polymeric passivation layer including a substantial portion of the polymeric containing residues from at least a portion of the sidewalls prior to anisotropically etching the second semiconductor feature.

Method for removing polymeric residue contamination on semiconductor feature sidewalls

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Hsin-Chu, Taiwan

Jun-Lung Huang