Tokyo Electron Limited

Central Glass Company, Limited

Jun Lin

Akifumi Yao

Kunihiro Yamauchi

Kazuaki Nishimura

Koji Takeya

Susumu Yamauchi

Takehiko Orii

Mitsuhiro Tachibana

Yoshiki Igarashi

Tatsuo Miyazaki

Chengya Chu

Takayuki Suga

Satoru Kikushima

Toshio Hasegawa

Yasuo Asada

Ayano Hagiwara

Shinji Irie

Tsuhung Huang

Shinichi Kawaguchi

Kenji Tanouchi

Kakeru Wada

An etching method for selectively etching a material containing Si and O is provided. The etching method includes providing a substrate containing the material containing Si and O in a chamber, repeating a first period for supplying a basic gas, which is started first, and a second period for supplying a fluorine-containing gas, which is started next, with at least a part of the second period not overlapping with the first period, and heating and removing a reaction product generated by the supply of the basic gas and the supply of the fluorine-containing gas.

Etching method and etching apparatus

The etching method of the present invention includes the step of supplying a first mixed gas containing a &#x3b2;-diketone-containing etching gas and a nitrogen oxide gas to a target having, on a surface, both a first metal film containing cobalt, iron, or manganese and a second metal film containing copper, thereby selectively etching the first metal film over the second metal film, or the step of supplying a second mixed gas containing a &#x3b2;-diketone-containing etching gas and oxygen gas to the target, thereby selectively etching the second metal film over the first metal film.

Etching method and etching device

There is provided a method of etching a silicon-containing film formed on a substrate, the method including: etching the silicon-containing film by using both a first fluorine-containing gas and a second fluorine-containing gas, the first fluorine-containing gas including at least an Fgas and the second fluorine-containing gas including at least a ClFgas, an IFgas, an IFgas or an SFgas.

Method of etching silicon-containing film, computer-readable storage medium, and apparatus for etching silicon-containing film

There is provided an etching method including: a first gas supply step of supplying a reducing gas to a workpiece having a metal film formed thereon to reduce a front surface of the metal film, the workpiece being accommodated in at least one processing chamber; and subsequently, a second gas supply step of supplying an oxidizing gas for oxidizing the metal film and an etching gas composed of a &#x3b2;-diketone to etch the oxidized metal film.

In an etching method for removing a processing target layer formed on a substrate for manufacturing electronic devices, a first break-through process of removing an oxide film formed on a surface of the processing target layer is performed, and a first main etching process of etching the processing target layer is performed after the first break-through process. Then, a second break-through process of removing the oxide film exposed after the first main etching process is performed, and a second main etching process of etching the processing target layer is performed after the second break-through process.

Etching method and substrate processing system

In a substrate processing method for performing predetermined processing on a substrate, which has a processing target film, accommodated in a processing chamber, as a luminous intensity of a predetermined wavelength in an emission spectrum of a plasma generated from a processing gas in the chamber, a luminous intensity of the predetermined wavelength which starts to change when actual processing of the processing target film is started is measured. Then, a processing time of the predetermined processing performed after a moment when the measured luminous intensity of the predetermined wavelength is changed, is set.

Substrate processing method and substrate processing apparatus

A technique capable of removing a natural oxide film formed on a surface of a semiconductor layer which contains a compound of indium and an element other than indium as a main ingredient, without making a temperature of the semiconductor layer relatively high. The technique includes supplying a first etching gas which is &#x3b2;-diketone to the semiconductor layer and heating the semiconductor layer to remove an oxide of the indium constituting the natural oxide film; and supplying a second etching gas to the semiconductor layer and heating the semiconductor layer to remove an oxide of the element constituting the natural oxide film. By using the first etching gas, it is possible to remove the indium oxide even if the temperature of the semiconductor layer is relatively low. This eliminates the need to increase the temperature to a relatively high level when removing the natural oxide film.

Naturally oxidized film removing method and naturally oxidized film removing device

In a film forming method for forming a cobalt film on a target substrate having a recess formed in a surface thereof to fill the recess with the cobalt film, the recess is partially filled by forming a cobalt film on the target substrate by an ALD method or a CVD method using an organic metal compound gas. The cobalt film is partially etched by supplying an etching gas containing &#x3b2;-diketone gas and NO gas to the target substrate. Then, the recess is further filled by forming a cobalt film on the target substrate by the ALD method or the CVD method using an organic metal compound gas.

Film forming method and film forming system

An etching method includes a step of etching a cobalt film formed on a surface of a target object by supplying an etching gas containing &#x3b2;-diketone and an oxidizing gas for oxidizing the cobalt film to the target object. The supply of the etching gas and the oxidizing gas is carried out such that a flow rate ratio of the oxidizing gas to the etching gas is ranging from 0.5% to 50% while heating the target object to a temperature lower than or equal to 250&#xb0; C.

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Yamanashi, Japan

Jun Lin