Samsung Electronics Co., Ltd.

Jun-ing Gil

Sang-moon Chon

Gyu-hwan Kwag

Sang-o Park

Se-jong Ko

Dae-Hoon Kim

Kyung-seuk Hwang

Ho-Kyoon Chung

Pil-Kwon Jun

Sung-il Kim

Heoung-bin Lim

Yong-woo Heo

Me-suk Jun

Eun-mi Bae

Boo-sup Lee

A nitride film etchant used in the manufacture semiconductor devices, and an etching method using the etchant, are provided. A wafer having a nitride film formed thereon is introduced into a bathing tube containing an etchant which is a water solution containing phosphoric acid (H PO ) of a concentration of 50-70% by weight and hydrofluoric acid (HF), and the nitride film is etched by the etchant. When the concentration of HF is 0.005 to 0.05% by weight, the etch rate of the nitride film is increased, and the selectivity between the nitride film and an oxide film is kept very high. Also, an etchant containing HF of a concentration of 0.05% by weight is provided as a water solution mixed with H PO and HF. Addition of HF of 0.05% by weight or less increases the etch rate of the nitride film, and a high selectivity of the nitride film with respect to an oxide film is maintained.

Etchant used in the manufacture of semiconductor devices and etching method using the same

A method of manufacturing semiconductor devices is provided for forming a tungsten plug or polysilicon plug and minimizing the step-height of the intermediate insulating layer. An etching composition for this process is also provided as are semiconductor devices manufactured by this process. The method of manufacturing semiconductor devices includes the steps of forming a tungsten film having a certain thickness on an insulating layer and burying contact holes formed in the insulating layer constituting a specific semiconductor structure, and spin-etching the tungsten film using a certain etching composition such that the tungsten film is present only inside the contact holes not existing on the insulating film. The etching composition includes at least one oxidant selected from the group comprising H O , O , IO , BrO , ClO , S O , KlO , H IO , KOH, and HNO , at least one enhancer selected from the group comprising HF, NH OH, H PO , H SO , and HCl, and a buffer solution formed by mixing them at certain rates.

Method of manufacturing semiconductor devices, etching compositions for manufacturing semiconductor devices, and semiconductor devices made using this method

A method of manufacturing semiconductor devices is provided, including the formation of a conductive plug and the minimizing of the step-height of an interlayer dielectric layer. An etching composition is also provided for such a manufacturing method. The method of manufacturing semiconductor devices includes the steps of forming an insulating layer over a semiconductor substrate, forming contact holes in the insulating layer, forming a conductive layer over the insulating layer to burying the contact holes, rotating the semiconductor substrate, and etching the conductive layer by supplying an etching composition on the rotating semiconductor substrate, and spin-etching the tungsten layer using an etching composition such that the conductive layer remains only inside the contact holes and does not remain over the insulating layer. The etching composition includes at least one oxidant selected from H,O,, O,, IO,, BrO,, ClO,, S,O,, KIO,, H,IO,, KOH and HNO,, at least enhancer selected from HF, NH,OH, H,PO,, H,SO,, NH,F and HCl, and a buffer solution, mixed together in certain amounts.

Method of manufacturing semiconductor devices, etching composition for manufacturing semiconductor devices, and semiconductor devices made using the method

A method of manufacturing semiconductor devices is provided for forming a tungsten plug or polysilicon plug and minimizing the step-height of the intermediate insulating layer. An etching composition for this process is also provided as are semiconductor devices manufactured by this process. The method of manufacturing semiconductor devices includes the steps of forming a tungsten film having a certain thickness on an insulating layer and burying contact holes formed in the insulating layer constituting a specific semiconductor structure, and spin-etching the tungsten film using a certain etching composition such that the tungsten film is present only inside the contact holes not existing on the insulating film. The etching composition includes at least one oxidant selected from the group comprising H.sub.2 O.sub.2, O.sub.2, IO.sub.4.sup.-, BrO.sub.3, ClO.sub.3, S.sub.2 O.sub.8.sup.-, KlO.sub.3, H.sub.5 IO.sub.6, KOH, and HNO.sub.3, at least one enhancer selected from the group comprising HF, NH.sub.4 OH, H.sub.3 PO.sub.4, H.sub.2 SO.sub.4, and HCl, and a buffer solution formed by mixing them at certain rates.

Method of manufacturing semiconductor devices, etching compositions for

A thinner composition used in a washing process for manufacturing semiconductor devices includes at least ethyl lactate (EL) and ethyl-3-ethoxy propionate (EEP), and preferably, additionally includes Gamma-butyrolactone. The thinner composition has high volatility and low viscosity as well as a sufficient solubility rate for rinsing photoresist on the wafer when spraying the thinner through nozzles. Photoresist at the edge or backside of a wafer can be effectively removed at a sufficiently rapid rate, so that the yield of the semiconductor devices is enhanced. In addition, any remaining photoresist attached to the surface can be completely removed to enable the reuse of the wafer, with resulting economic benefits.

Thinner composition for washing a photoresist in a process for preparing

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Hwasung-gun, South Korea

Jun-ing Gil