Samsung Electronics Co., Ltd.

Jun-Hyun Cho

Jung-Ho Lee

Jung-Sik Choi

Youn-Joung Cho

Jung-sik Choi

Mi-Ae Kim

Sang-Mun Chon

Kyoo-Chul Cho

Tae-Sung Kim

Dong-Jun Lee

Ji-hyun Lee

Seung-Min Ryu

Tae-Min Eom

Dong-jun Lee

Kyoo-chul Cho

Hyo-Jin Yun

Ji-Man Park

Jin-Seo Lee

A method of forming a pattern includes forming an underlayer on an etching target layer by a chemical vapor deposition (CVD) process, the underlayer including a silicon compound combined with a photoacid generator (PAG), forming a photoresist layer on the underlayer, irradiating extreme ultraviolet (EUV) light on the photoresist layer to form a photoresist pattern, and etching the etching target layer using the photoresist pattern as an etching mask.

Methods of forming a pattern and methods of manufacturing a semiconductor device using the same

Disclosed are an organometallic precursor that may be used in manufacturing a semiconductor device, a thin film having the same, a metal wiring including the thin film, a method of forming a thin film and a method of manufacturing a metal wiring. An organometallic precursor including a central metal, a borohydride ligand and an amine ligand for reducing a polarity of the organometallic precursor may be provided onto a substrate, and may be thermally decomposed to form a thin film on the substrate. The organometallic precursor having a reduced polarity may be provided to a chamber with a constant flow rate, and thus stability and/or efficiency of a semiconductor manufacturing process may be improved.

Organometallic precursor, thin film having the same, metal wiring including the thin film, method of forming a thin film and method of manufacturing a metal wiring using the same

A metal oxide alloy layer comprises a first layer including a first metal oxide and having a first thickness, and a second layer formed on the first layer, the second layer including a second metal oxide and having a second thickness, wherein a value of the first thickness is such that the first metal oxide is allowed to move into the second layer and a value of the second thickness is such that the second metal oxide is allowed to move into the first layer to form a single-layered structure in which the first and second metal oxides are mixed.

Metal oxide alloy layer, method of forming the metal oxide alloy layer, and methods of manufacturing a gate structure and a capacitor including the metal oxide alloy layer

A method of forming an insulating layer and a method of manufacturing a semiconductor device using insulating layer are disclosed. A preliminary insulating layer including a material having a relatively low dielectric constant is formed on an object. An upper portion of the preliminary insulating layer is provided with an ozone gas to transform the preliminary insulating layer into an insulating layer having an upper insulating film including an oxide and a lower insulating film including the material having the relatively low dielectric constant. The upper insulating film may further be located on the lower insulating film.

Method of manufacturing an insulating layer and method of manufacturing a semiconductor device using the insulating layer

Provided herein are methods of forming a metal oxide layer that include providing an organometallic compound and an oxidizing agent to the substrate to form the metal oxide layer on the substrate. The organometallic compound may have the general formula of M(NRR)R, wherein M is a metal; Rand Rare each independently hydrogen or alkyl; and Ris selected from the group consisting of alkyl, cycloalkyl, heterocycloalkyl, aryl and heteroaryl.

Methods of forming metal oxide layers, methods of forming gate structures using the same, and methods of forming capacitors using the same

A method of forming a thin film is provided. The method includes introducing an organometallic compound represented by the following formula onto a substrate; 

Methods of forming a thin film and methods of manufacturing a capacitor and a gate structure using the same

In a method of forming a metal oxide, an organic metal compound represented by the following chemical formula is introduced into a chamber to chemisorb the organic metal compound onto a substrate,M[L1]x[L2]ywhere M represents a metal, Land Lrespectively represents a first and second ligands. In addition, x and y are independently integers and a value of (x+y) is 3 to 5. An oxygen-containing compound is introduced into the chamber to form the metal oxide. The metal oxide is formed by reacting an oxygen of the oxygen-containing compound with the metal, and separating the ligand from the metal. Thus, the metal oxide having a superior step coverage and a high dielectric constant may be formed using the organic metal compound by an atomic layer deposition process.

Method of forming metal oxide using an atomic layer deposition process

A spin-on glass (SOG) composition and a method of forming a silicon oxide layer utilizing the SOG composition are disclosed. The method includes coating on a semiconductor substrate having a surface discontinuity, an SOG composition containing polysilazane having a compound of the formula &#x2014;(SiHNH)&#x2014; wherein n represents a positive integer, a weight average molecular weight within the range of about 3,300 to 3,700 to form a planar SOG layer. The SOG layer is converted to a silicon oxide layer with a planar surface by curing the SOG layer. Also disclosed is a semiconductor device made by the method.

Spin-on glass composition and method of forming silicon oxide layer in semiconductor manufacturing process using the same

A spin-on glass composition includes a solvent, about 3 to about 20 percent by weight of a porogen, and about 3 to about 20 percent by weight of a silsesquioxane oligomer represented by formula (1), where, in the formula (1), Yand Yindependently represent a hydrolyzable alkoxy group, R represents a lower alkyl group, and n and m independently represent an integer in a range of one to nine both inclusive.

Spin-on glass composition, method of preparing the spin-on glass composition and method of forming a porous silicon oxide layer using the spin-on glass composition

An organic aluminum precursor includes aluminum as a central metal, and borohydride and trimethylamine as ligands. In a method of forming an aluminum layer or wire, the organic aluminum presursor is introduced onto a substrate, and then thermally decomposed. The aluminum decomposed from the organic aluminum precursor is deposited on the substrate.

Organic aluminum precursor and method of forming a metal wire using the same

In a method of manufacturing a metal wiring, an organic aluminum precursor that includes aluminum as a central metal is applied to a substrate. The organic aluminum precursor applied to the substrate is thermally decomposed to form aluminum. The aluminum is deposited on the substrate to form an aluminum wiring having a low resistance. The organic aluminum precursor includes a chemical structure in accordance with one of the chemical formulae:  

Organic aluminum precursor and method of manufacturing a metal wiring using the same

Forming composite metal oxide layer with hafnium oxide and titanium oxide

In a method of forming a metal oxide, an organic metal compound represented by the following chemical formula is introduced into a chamber to chemisorb the organic metal compound onto a substrate,M[L1]x[L2]ywhere M represents a metal, L1 and L2 respectively represents a first and second ligands. In addition, x and y are independently integers and a value of (x+y) is 3 to 5. An oxygen-containing compound is introduced into the chamber to form the metal oxide. The metal oxide is formed by reacting an oxygen of the oxygen-containing compound with the metal, and separating the ligand from the metal. Thus, the metal oxide having a superior step coverage and a high dielectric constant may be formed using the organic metal compound by an atomic layer deposition process.

Growing community of inventors

Suwon-si, South Korea

Jun-Hyun Cho