Tokyo Electron Limited

Other

Fujikin Inc.

Tokyo Electron Limi Ted

Shin-etsu Chemical Co., Ltd.

Ckd Corporation

V-tex Corporation

Jun Hirose

Kouji Nishino

Nobukazu Ikeda

Ryousuke Dohi

Hiroshi Koizumi

Satoshi Kagatsume

Tadahiro Ohmi

Eiji Ideta

Hideki Nagaoka

Akira Koshiishi

Takashi Hirose

Jun Ozawa

Tomio Uno

Michio Yamaji

Atsushi Sawachi

Jun Ooyabu

Atsushi Matsumoto

Akihiro Morimoto

Norihiko Amikura

Yukio Minami

Kazuhiko Sugiyama

Masahiro Ogasawara

Takehiro Ueda

Yohei Uchida

Michishige Saito

Taichi Hirano

Eiji Hirose

Suguru Sato

Takuya Nishijima

Hiroyuki Ishihara

Toyomi Uenoyama

Ichiro Sone

Tetsuo Yoshida

Hiromitsu Sasaki

Kohji Numata

Katsunori Yonehana

Kazuo Fukazawa

Kazuhiro Yoshikawa

Mitsunori Ohata

Takahiro Matsuda

Kazuhiro Kubota

Risako Miyoshi

Masaki Narushima

Mutsunori Koyomogi

Shigeki Tozawa

Hidetoshi Kimura

Kazuo Fukasawa

Kazuyuki Tezuka

Tsuyoshi Hida

Kiyoshi Maeda

Seiichi Iida

Chishio Koshimizu

Hiroshi Ohno

Daisuke Hayashi

Kazuya Nagaseki

Koji Miyata

Shinji Himori

Kazunari Watanabe

Kohei Shigyou

Kazuki Denpoh

Shin Matsuura

Hiroki Endo

Kaoru Oohashi

Nobuyuki Okayama

Kazuyuki Miura

Hiroki Oka

Takashi Kitazawa

Masaaki Miyagawa

Hideaki Tanaka

Minoru Ito

Yoji Iizuka

Shosuke Endoh

Yuki Chiba

Keiki Ito

Masayuki Sawataishi

Wataru Shimizu

Hiroki Doi

Tsuyoshi Shimazu

Koichi Nagakura

Kengo Kaneko

Noriyuki Iwabuchi

Yasuhiro Tobe

Takaaki Hirooka

Tomonori Miwa

Satoru Teruuchi

Shigeaki Kato

Akira Kodashima

Tomoya Okubo

Shunsuke Mizukami

Shinobu Onodera

Tomomi Kondo

Tatsuya Nakagome

Toshikatsu Wakaki

Tetsujiro Kono

Osamu Katsumata

Makoto Ohara

Kenichi Nakagawa

Taiki Hoshiko

A gas supply device capable of saving space and supplying a mixed gas having components with stable concentration to a processing chamber in a short time includes: a plurality of fluid control units each including a flow path through which gas flows, and fluid control devices provided in the middle of the flow path; a merging flow path including a plurality of connecting portions fluidly connected to the plurality of fluid control units and a single gas outlet portion which derives the gas introduced through the plurality of connecting portions; wherein a plurality of connecting portions is arranged symmetrically with respect to the gas outlet portion in the flow path direction of the merging flow path, and two or more fluid control units are fluidly connected to each of the plurality of connecting portions.

Gas supply device and semiconductor manufacturing apparatus

A plasma monitoring system includes a monitoring device and a control device. The monitoring device is a device to be placed on a stage in the plasma processing apparatus. The monitoring device includes a plate-shaped base substrate, and a plurality of spectroscopes having optical axes facing upward on the base substrate, and being disposed apart from each other to acquire light emission intensities of the plasma. The control device acquires light emission intensity distribution data of the plasma in the plasma processing apparatus based on the light emission intensity acquired by each of the plurality of spectroscopes.

Plasma monitoring system, plasma monitoring method, and monitoring device

A substrate processing apparatus includes a first chamber having an inner space and an opening, a substrate support disposed in the inner space of the first chamber, an actuator configured to move the substrate support between a first position and a second position, a second chamber that is disposed in the inner space of the first chamber and defines a substrate processing space together with the substrate support when the substrate support is located at the first position, and at least one fixing mechanism configured to detachably fix the second chamber to the first chamber in the inner space of the first chamber. The second chamber is transferred between the inner space of the first chamber and an outside of the first chamber through the opening when the substrate support is located at the second position.

Substrate processing apparatus

A substrate processing apparatus is provided. The substrate processing apparatus comprise: a first chamber including a sidewall providing an opening, the first chamber further including a movable part movable upward and downward within the first chamber; a substrate support disposed within the first chamber; a second chamber disposed within the first chamber and defining, together with the substrate support, a processing space in which a substrate mounted on the substrate support is processed, the second chamber being separable from the first chamber and transportable between an inner space of the first chamber and the outside of the first chamber via the opening; a clamp releasably fixing the second chamber to the movable part extending above the second chamber; a release mechanism configured to release the fixing of the second chamber by the clamp; and a lift mechanism configured to move the movable part upward and downward.

Substrate processing apparatus, substrate processing system, and maintenance method

A mounting table includes a wafer mounting surface mounting a wafer, a ring mounting surface disposed at a radially outer side of the wafer mounting surface and mounting a first ring having a first engaging portion and a second ring having a second engaging portion to be engaged with the first engaging portion, a lifter pin, and a driving mechanism. The second ring has a through-hole extends to reach a bottom surface of the first engaging portion, and the ring mounting surface has a hole at a position corresponding to the through-hole. A lifter pin has a first holding part that fits into the through-hole and a second holding part that extends from the first holding part and has a part protruding from the first holding part. The lifter pin is accommodated in the hole, and a driving mechanism vertically moves the lifter pin.

Plasma processing apparatus and mounting table thereof

A plasma processing apparatus of the present disclosure includes a chamber, a shutter, and a contact portion. The chamber has an opening in a sidewall thereof so as to carry a wafer W into the chamber through the opening, and performs therein a predetermined processing on the wafer W by plasma of a processing gas supplied thereinto. The shutter opens or closes the opening by moving along the sidewall of the chamber. The contact portion is formed of a conductive material, and is not in contact with the shutter while the shutter is moving. When the shutter is in the position for closing the opening, the contact portion is displaced in a direction different from the direction of movement of the shutter to come into contact with the shutter.

Plasma processing apparatus

A processing system capable of increasing an operating time of the processing system is provided. The processing system includes a vacuum transfer module, a plurality of processing modules, a plurality of load-lock modules, and a plurality of atmospheric transfer modules. The vacuum transfer module is configured to transfer a substrate in a pressure lower than an atmospheric pressure. The processing modules are connected to the vacuum transfer module and configured to process the substrate. The load-lock modules are connected to the vacuum transfer module. Each of the atmospheric transfer modules is connected to at least one of the load-lock modules and configured to transfer the substrate in an atmospheric environment.

Processing system

An assembly provided with a coolant flow channel includes a base in which the coolant flow channel is formed; and a protrusion component that is disposed in the coolant flow channel, wherein the protrusion component is liftable or rotatable.

Assembly provided with coolant flow channel, method of controlling assembly provided with coolant flow channel, and substrate processing apparatus

A maintenance device has a cover and a fixing member. The cover is in a vacuum atmosphere during substrate processing, is formed to have a size corresponding to a boundary line between a first part and a second part of a processing container, which can be separated into the first part and the second part, or an opening surface separating the first part and the second part, and has airtightness, and visual transparency at least in a part. The fixing member fixes in an airtight manner the cover along the boundary line between the first part and the second part of the processing container or to the opening surface separating the first part and the second part.

Maintenance device

A substrate support for use in a plasma processing chamber includes a substrate support body, a lifter pin and a lift mechanism. The substrate support body has a pin through-hole and the pin through-hole has a female-threaded inner wall. The lifter pin has a base segment, an intermediate segment, and a leading segment. The lifter pin is inserted into the pin through-hole, the intermediate segment is male-threaded, and the male-threaded intermediate segment is screwable to the female-threaded inner wall. The lift mechanism is configured to vertically move the lifter pin relative to the substrate support body.

Substrate support and plasma processing apparatus

A maintenance apparatus includes a case and a maintenance mechanism. The case includes an opening having a size corresponding to a second gate of a vacuum processing apparatus including a processing chamber having a first gate through which a substrate is loaded and unloaded and the second gate different from the first gate. The case is attachable to the second gate while maintaining airtightness. The maintenance mechanism is provided in the case and is configured to perform at least one of an operation of detaching a consumed part in the processing chamber through the opening, an operation of attaching a replacement part in the processing chamber and an operation of cleaning the processing chamber.

Vacuum processing apparatus and maintenance apparatus

A plasma etching method according to an exemplary embodiment comprises arranging a substrate on an electrostatic chuck in a region surrounded by a focus ring. The substrate, in a state of being held by the electrostatic chuck, is etched by means of ions from a plasma. The electrostatic chuck includes a plurality of electrodes including a first electrode and a second electrode. The first electrode extends under a central region of the substrate. The second electrode extends under an edge region of the substrate. A plurality of voltages are respectively applied to the plurality of electrodes, wherein the plurality of voltages are determined such that, in the state in which the substrate is held by the electrostatic chuck, the ions from the plasma are incident on both the central region and the edge region substantially vertically.

Plasma etching method and plasma processing device

Disclosed is a method of inspecting a flow rate measuring system used in a substrate processing system. The flow rate measuring system provides a gas flow path used for calculating a flow rate in a build-up method. A gas output by a flow rate controller of a gas supply unit of the substrate processing system may be supplied to the gas flow path. In the method, apart from a previously obtained initial value of a volume of the gas flow path, a volume of the gas flow path is obtained at the time of inspection of the flow rate measuring system. Then, the obtained volume is compared to the initial value.

Method of inspecting flow rate measuring system

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Miyagi, Japan

Jun Hirose