Tokyo Electron Limited

Jun Hashimoto

Toshihisa Nozawa

Masaru Sasaki

Tetsuya Nishizuka

Toshihisa Ozu

Shota Yoshimura

There is provided a plasma etching apparatus provided for performing an etching in a desirable shape. The plasma etching apparatus includes a processing chamberfor performing a plasma process on a target substrate W; a gas supply unitfor supplying a plasma processing gas into the processing chamber; a supporting table positioned within the processing chamberand configured to support the target substrate thereon; a microwave generatorfor generating a microwave for plasma excitation; a plasma generation unit for generating plasma within the processing chamberby using the generated microwave; a pressure control unit for controlling a pressure within the processing chamber; a bias power supply unit for supplying AC bias power to the supporting table; and a control unit for controlling the AC bias power by alternately repeating supply and stop of the AC bias power.

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Albany, NY, United States of America

Jun Hashimoto