K. C. Tech Co., Ltd.

Samsung Electronics Co., Ltd.

Jun Ha Hwang

Sung Pyo Lee

Chang Gil Kwon

Kwang Soo Park

Jang Kuk Kwon

Jung Yoon Kim

Hae Won Yang

Dongchan Kim

Eunsung Seo

Chul-Hwan Choo

Bo Yun Kim

Nak Hyun Choi

Doo Hee Hwang

Soo Wan Choi

Hyo Jun Jang

Jeong Gyu Lee

Provided is a cerium-based particle and a polishing slurry composition including the same. The cerium-based particle may include a self-assembly of fine particles and an organic material. The cerium-based particle is a spherical ceria powder connected by a crystalline network formed by a self-assembly of a fine particle. The cerium-based particle is a heat-treated self-assembly of fine particles. The moisture content of the self-assembly of the fine particles is 2% or less, and the temperature of the heat treating is in the range of 500° C. to 600° C.

Cerium-based particle and polishing slurry composition including the same

A memory device includes a memory cell for storing data, and a memory controller configured to check whether a dynamic voltage frequency scaling core (DVFSC) operation is used, check information stored in the memory device indicating a setting of the host device in response to the DVFSC operation being used, determine a level of a low voltage used for the DVFSC operation based on the information, and transmit the determined level of the low voltage used for the DVFSC operation to the host device.

Memory device and method for managing dynamic voltage frequency scaling operations based on host configuration

The present disclosure relates to a polishing slurry composition and a method of producing the same. The polishing slurry composition according to one embodiment of the present disclosure includes: abrasive particles dispersed so as to have positively-charged particle surfaces; a first dispersant including a nonionic linear polymer; and a second dispersant including an anionic coiling polymer, wherein the polishing slurry composition satisfies the following Expressions 1 and 2: [Expression 1] 4≤log(milling energy)<5; and [Expression 2] 20%≤Primary particle size reduction rate (%)<35%.

Polishing slurry composition and method for producing same

The present disclosure relates to a polishing slurry composition for an STI process and, more specifically, to a polishing slurry composition for an STI process, the polishing slurry composition comprising: a polishing solution including polishing particles; and an additive solution containing a polymer having an amide bond, and a polysilicon film polishing barrier inclusive of a monomer having three or more chains linked to one or more atoms.

Polishing slurry composition for sti process

The present invention relates to a polishing slurry composition for an STI process, the polishing slurry composition comprising: a polishing solution including polishing particles; and an additive solution containing a nitride film polishing barrier inclusive of a polymer having an amide bond.

Polishing slurry composition for STI process

Described herein are chemical mechanical polishing (CMP) slurry compositions, such as CMP slurry compositions for polishing an indium tin oxide (ITO) layer, along with methods of fabricating a semiconductor device using such a CMP slurry composition. The CMP slurry composition can include a polishing particle, a dispersing agent, an auxiliary oxidizing agent, and a sugar alcohol compound.

CMP slurry compositions and methods of fabricating a semiconductor device using the same

An additive composition and a positive polishing slurry composition including the additive composition are provided. The additive composition includes a cationic compound, an organic acid, a nonionic compound, and a pH adjuster.

Additive composition and positive polishing slurry composition including the same

An abrasive particle-dispersion layer composite and a polishing slurry composition including the abrasive particle-dispersion layer composite are provided. The abrasive particle-dispersion layer composite includes abrasive particles, a first dispersant that is at least one cationic compound among an amino acid, an organic acid, polyalkylene glycol and a high-molecular polysaccharide coupled to a glucosamine compound, and a second dispersant that is a cationic polymer including at least two ionized cations in a molecular formula.

Abrasive particle-dispersion layer composite and polishing slurry composition including the same

An abrasive particle-dispersion layer composite and a polishing slurry composition including the abrasive particle-dispersion layer composite are provided. The abrasive particle-dispersion layer composite includes abrasive particles, a first dispersant that is at least one anionic compound among a copolymer with a functional group of a resonance structure, a carboxyl group-containing polymer and a carboxyl group-containing organic acid, a second dispersant that is at least one cationic compound among an amino acid, an organic acid, polyalkylene glycol and a high-molecular polysaccharide coupled to a glucosamine compound, and a third dispersant that is a cationic polymer including at least two ionized cations in a molecular formula.

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Pyeongtaek-si, South Korea

Jun Ha Hwang